本文選題：銅精拋液 + 化學(xué)機(jī)械拋光(CMP)�。� 參考：《半導(dǎo)體技術(shù)》2017年11期

【摘要】：研究了陰離子表面活性劑十二烷基硫酸銨(ADS)在弱堿性銅拋光液中對(duì)晶圓平坦化效果的影響。對(duì)不同質(zhì)量分?jǐn)?shù)的陰離子表面活性劑ADS下的拋光液表面張力、銅去除速率、拋光后銅膜的碟形坑高度、晶圓片內(nèi)非均勻性和表面粗糙度進(jìn)行了測(cè)試。實(shí)驗(yàn)結(jié)果表明,當(dāng)陰離子表面活性劑ADS的質(zhì)量分?jǐn)?shù)為0.2%時(shí),拋光液的表面張力降低,銅的去除速率為202.5 nm·min~(-1),去除速率片內(nèi)非均勻性減小到4.15%,拋光后銅膜的碟形坑高度從132 nm降低到68.9 nm,表面粗糙度減小到1.06 nm。與未添加表面活性劑相比,晶圓表面的平坦化效果得到改善。
[Abstract]:The effect of anionic surfactant dodecyl ammonium sulfate (ADS) on wafer flatting in weakly alkaline copper polishing solution was studied. The surface tension, copper removal rate, disc pit height, inhomogeneity and surface roughness of polished copper film under different mass fraction of anionic surfactant ADS were measured. The experimental results show that the surface tension of the polishing liquid decreases when the mass fraction of the anionic surfactant ADS is 0.2. The removal rate of copper was 202.5 nm / min ~ (-1), and the inhomogeneity of the removal rate was reduced to 4.15 nm. After polishing, the disc pit height of the copper film was reduced from 132nm to 68.9 nm, and the surface roughness was reduced to 1.06 nm. The flattening effect of wafer surface is improved compared with that without surfactant.
【作者單位】： 河北工業(yè)大學(xué)電子信息工程學(xué)院;天津市電子材料與器件重點(diǎn)實(shí)驗(yàn)室;
【基金】：國(guó)家科技重大專項(xiàng)子課題資助項(xiàng)目(2016ZX02301003-004-007) 河北省自然科學(xué)基金青年基金資助項(xiàng)目(F2015202267) 河北工業(yè)大學(xué)優(yōu)秀青年科技創(chuàng)新基金資助項(xiàng)目(2015007)
【分類號(hào)】：TN405

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本文編號(hào)：1919541