本文選題：Ka波 + 氮化鎵高電子遷移率晶體管　； 參考：《西安電子科技大學》2015年碩士論文

【摘要】：GaN HEMT器件以其高頻大功率特點成為微波功率器件的絕佳選擇,目前關于GaN HEMT的研究已經(jīng)逐漸進入毫米波頻段。本論文主要針對Ka波GaN HEMT及功率放大器進行研究,取得的主要成果如下:1、基于Atlas器件仿真軟件,構造了AlGaN/GaN HEMT器件的二維平面結構,成功建立了Ka波AlGa N/GaN HEMT器件的二維電學仿真模型,探索了側墻AlN的使用對柵下電場的影響,其仿真結果對后續(xù)器件結構的設計具有指導意義。2、開展了Ka波GaN HEMT關鍵工藝研究,利用SF6氣體探索低損傷凹槽柵刻蝕;采用多層復合電子束膠體系,優(yōu)化電子束曝光條件,成功制得100nm T型柵;研究了Al2O3表面鈍化。3、針對Ka波器件所存在的漏電問題,結合凹柵槽技術,采用ALD生長Al2O3方法成功研制出柵長為0.16μm的Al2O3鈍化Al GaN/GaN HEMT器件,器件肖特基柵漏電減小近兩個數(shù)量級,fmax/ft比值增大,關態(tài)擊穿電壓也顯著提升。4、開展外延結構創(chuàng)新設計,引入AlN背勢壘來改善溝道載流子的限閾特性。在基于藍寶石襯底的外延材料上成功制得了0.16μm柵長的AlN背勢壘結構AlGaN/GaN HEMT器件,測試結果表明:AlN背勢壘結構有效抑制了器件的短溝道效應并減小器件柵漏電,器件fmax達到186 GHz,較常規(guī)器件提升了19.3%,30GHz下連續(xù)波輸出功率達到了0.88 W/mm,PAE為12.31%。5、基于Win公司研制的芯片,采用load-pull設計方法制作了一款兩級多管的功率放大電路。
[Abstract]:GaN HEMT devices have become the best choice for microwave power devices because of their high frequency and high power. At present, the research on GaN HEMT has gradually entered the millimeter wave band. In this paper, the Ka-wave GaN HEMT and power amplifier are studied. The main results are as follows: 1. Based on the simulation software of Atlas device, the two-dimensional planar structure of AlGaN/GaN HEMT device is constructed. The 2-D electrical simulation model of Ka wave AlGa N/GaN HEMT devices is successfully established, and the influence of the use of side wall AlN on the electric field under gate is explored. The simulation results are of guiding significance for the design of subsequent device structures. The key process of Ka wave GaN HEMT is studied. Using SF6 gas to explore low damage grooved gate etching; using multilayer composite electron beam adhesive system to optimize the electron beam exposure conditions, the 100nm T gate is successfully fabricated; the passivation of Al2O3 surface. 3, and the leakage problem of Ka wave devices are studied. Combined with concave gate slot technique, Al2O3 passivated Al GaN/GaN HEMT devices with gate length of 0.16 渭 m were successfully fabricated by using ALD growth Al2O3 method. Schottky gate leakage was reduced by nearly two orders of magnitude and the ratio of f max / ft was increased. The on-off breakdown voltage is also significantly increased .4. innovative epitaxial structure design is carried out and the AlN back barrier is introduced to improve the threshold limiting characteristics of the channel carriers. AlGaN/GaN HEMT devices with 0.16 渭 m gate length AlN back barrier structure have been successfully fabricated on sapphire substrate. The experimental results show that the AlN back barrier structure can effectively suppress the short channel effect of the device and reduce the gate leakage. The fmax of the device is up to 186GHz, and the output power of continuous wave is up to 0.88W / mmPae at 30 GHz compared with the conventional device. Based on the chip developed by Win Company, a two-stage multi-transistor power amplifier circuit is fabricated by using load-pull design method.
【學位授予單位】：西安電子科技大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN386;TN722.75

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本文編號：1919149