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  本文選題：微波等離子體光源 + 微波功率放大器�。� 參考：《電子科技大學(xué)》2016年碩士論文

【摘要】：微波等離子體光源(Light Emitting Plasma,簡稱LEP)是一種由微波驅(qū)動的具有連續(xù)光譜的新型光源,誕生于上世紀(jì)九十年代。具有高效、節(jié)能、光譜連續(xù)近似自然光等優(yōu)點(diǎn),光效高達(dá)115-150lm/w。新型LEP光源以固體微波功率源模塊提供微波能,微波功率源模塊主要包括:掃頻源、可變增益微波放大鏈路、耦合檢波部分和控制部分。本文主要研究用于微波等離子體光源的可調(diào)增益射頻功率放大器,是可變增益微波放大鏈路中的前級部分,主要包括預(yù)驅(qū)動級、驅(qū)動級和電可調(diào)衰減器三部分,其主要為最后的末極放大器提供相應(yīng)功率的輸入信號,并根據(jù)反饋回路要求對輸出功率進(jìn)行自動調(diào)節(jié)。具體技術(shù)指標(biāo)為:工作帶寬420MHz~470MHz,輸出功率大于30dBm,增益大于30dB,衰減量調(diào)節(jié)范圍大于10dB。本文從電路設(shè)計(jì)和板圖方面對射頻功率放大器進(jìn)行了詳細(xì)的分析,給出了射頻功率放大器的一般設(shè)計(jì)方法;利用ADS軟件仿真了功率放大器的穩(wěn)定性、偏置電路、輸入輸出匹配電路,分別進(jìn)行了小信號S參數(shù)仿真和大信號諧波平衡仿真;分析了電調(diào)衰減器的工作原理,仿真了電調(diào)衰減器在所用頻率下的性能參數(shù);使用Protel99軟件布線設(shè)計(jì)板圖。使用AutoCAD2004軟件設(shè)計(jì)了結(jié)構(gòu)件。最后對本文設(shè)計(jì)的功率放大器進(jìn)行了實(shí)際加工,并分模塊調(diào)試了電源部分、預(yù)驅(qū)動級、驅(qū)動級和電可調(diào)衰減器,在各模塊滿足設(shè)計(jì)指標(biāo)后對整體系統(tǒng)進(jìn)行了測試。其中,電源部分需要五路電源,本文利用電源穩(wěn)壓芯片為其中的四路供電,另外一路單獨(dú)供電;預(yù)驅(qū)動級部分,輸出功率為3W時,功率增益約為15.8dB,輸出功率4W時,功率增益約為14.3dB;驅(qū)動級部分,小信號增益較為平坦為20dB左右。輸入功率超過-1dBm增益壓縮較為明顯,這與驅(qū)動放大器18.5dBm的P1dB一致,輸入功率增大到3dBm時,增益壓縮超過2dB,增益約為17.7dB;電可調(diào)衰減器部分,衰減電壓分別選擇0V和20V,衰減量分別為15.2dB和3.0dB。最終整體系統(tǒng)的測試結(jié)果表明:在工作頻帶范圍內(nèi),輸入功率為0dBm時,輸出功率均大于32.5dBm,增益大于32.5dB,衰減量調(diào)節(jié)范圍大于12.2dB,系統(tǒng)滿足設(shè)計(jì)要求。
[Abstract]:Light Emitting Plasma (LEP) is a new type of light source driven by microwave, which has continuous spectrum. It was born in the 90s of last century. It has the advantages of high efficiency, energy saving and continuous spectral approximation of natural light. The light effect up to the 115-150lm/w. new LEP source provides microwave energy with the solid microwave power source module. The power source module mainly includes the sweep frequency source, the variable gain microwave amplification link, the coupling detection part and the control part. This paper mainly studies the adjustable gain RF power amplifier for the microwave plasma source. It is the front stage part of the variable gain microwave amplification link, mainly including the pre drive stage, the drive level and the electrically adjustable attenuator three. Part, mainly for the final terminal amplifier to provide the input signal of the corresponding power, and automatically adjust the output power according to the feedback loop. The specific technical specifications are: working bandwidth 420MHz~470MHz, output power greater than 30dBm, gain greater than 30dB, the decrement range is greater than 10dB.. The RF power amplifier is analyzed in detail, and the general design method of the RF power amplifier is given. The stability of the power amplifier, the bias circuit and the input and output matching circuit are simulated by the ADS software. The simulation of the small signal S parameters and the harmonic balance simulation of the large signal are carried out respectively, and the working principle of the electric attenuator is analyzed. The performance parameters of the electric attenuator at the frequency used are true; the Protel99 software is used to design the board diagram. The structure parts are designed using the AutoCAD2004 software. Finally, the power amplifier designed in this paper is actually processed, and the power supply part, the pre drive stage, the drive level and the electric adjustable attenuator are debugged in modules, and the design is satisfied in each module. After the index, the whole system is tested. Among them, the power supply needs five circuit power supply. In this paper, the power supply voltage regulator chip is used for power supply of four channels, and the other way is powered separately. The power gain is about 15.8dB when the output power is 3W, the power gain is about 14.3dB when the output power is 4W, and the drive level part, small signal gain More flat is about 20dB. The input power over -1dBm gain compression is more obvious. This is consistent with the P1dB of the driving amplifier 18.5dBm. When the input power increases to 3dBm, the gain compression is more than 2dB, the gain is about 17.7dB; the electrical attenuator part, the attenuation voltage is selected for 0V and 20V respectively, and the decrement is the 15.2dB and 3.0dB. system respectively. The test results show that when the input power is 0dBm, the output power is more than 32.5dBm, the gain is more than 32.5dB and the regulation range of the attenuation is more than 12.2dB, and the system meets the design requirements.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2016
【分類號】：TN722.75

【參考文獻(xiàn)】

相關(guān)期刊論文 前2條

1 李輝,陳效建;匹配電路諧波特性對功率放大器性能的影響[J];固體電子學(xué)研究與進(jìn)展;2002年01期

2 朱乙平;微波場效應(yīng)功率放大器的CAD技術(shù)[J];雷達(dá)與對抗;1996年03期

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本文編號：1917408