發(fā)布時(shí)間：2018-05-19 06:12

  本文選題：SiC + pn結(jié)型二極管�。� 參考：《河北工業(yè)大學(xué)》2015年碩士論文

【摘要】：隨著微電子技術(shù)的發(fā)展,傳統(tǒng)的半導(dǎo)體材料(Si)已經(jīng)無(wú)法滿足高性能半導(dǎo)體器件的技術(shù)要求。由此推動(dòng)寬禁帶半導(dǎo)體材料和電子電力器件的發(fā)展,然而目前對(duì)碳化硅(SiC)pn結(jié)二極管的研究普遍在其高溫、耐壓的特性上,缺乏多種SiC同素異構(gòu)體二極管之間的、和常規(guī)材料Si二極管對(duì)比的,以及可供實(shí)際應(yīng)用的參考數(shù)據(jù)的研究和分析。本文以4H-SiC半導(dǎo)體材料為例建立p+n-n+結(jié)構(gòu)二極管的仿真模型,選取了3C-SiC、6H-SiC、4H-SiC三種同素異構(gòu)體的pn結(jié)二極管,以及Si pn結(jié)二極管進(jìn)行模擬研究,通過(guò)對(duì)比分析和參數(shù)提取,研究碳化硅器件的優(yōu)越性能。研究表明,SiC的寬禁帶特性使其pn結(jié)型二極管正向特性在常溫下的電流范圍為10-14A~10-2A,而達(dá)到高溫700K時(shí),電流范圍為10-6A~10-3A,理想因子n范圍始終在1~2之間。而Si二極管工作在溫度達(dá)到550K時(shí),擴(kuò)散區(qū)電流范圍僅為10-3A~10-1A,二極管特性已消失。4H-SiC pn結(jié)二極管的反向擊穿電壓受襯底厚度影響,600K下反向擊穿電壓可以達(dá)到700V,反向漏電流達(dá)到1.2×10-11A/cm2。由此可知,SiC半導(dǎo)體材料器件具有優(yōu)越的性能,研究所得參數(shù)對(duì)選取碳化硅二極管適用擴(kuò)散區(qū)范圍有重要意義。
[Abstract]:With the development of microelectronic technology, the traditional semiconductor material (Si-Si) has been unable to meet the technical requirements of high performance semiconductor devices. This has promoted the development of wide band gap semiconductor materials and electronic power devices. However, at present, the study of silicon carbide SICP Pn-junction diodes is generally characterized by their high temperature and voltage characteristics, and the lack of many kinds of SiC isomer diodes. Research and analysis of reference data compared with conventional Si diodes and available for practical application. In this paper, the simulation model of p-n-n structure diodes is established by taking 4H-SiC semiconductor material as an example. The pn junction diodes of 3C-SICP 6H-SiC 4H-SiC isomers and the Sipn junction diodes are selected for simulation study. The simulation results are compared and the parameters are extracted. The superior performance of silicon carbide devices is studied. The results show that the wide bandgap characteristic of sic makes the forward characteristics of p-n junction diodes in the current range of 10-14 An 10-2A at room temperature, while at 700K at high temperature, the current range is 10-6An 10-3A, and the ideal factor n is always between 1g ~ 2. When the temperature of Si diode is up to 550 K, the current range of diffusion region is only 10-3 An ~ (-1) A. the reverse breakdown voltage of 4H-SiC PN junction diode has disappeared. The reverse breakdown voltage can reach 700 V and the reverse leakage current can reach 1.2 脳 10 ~ (-11) A / cm ~ (2) under the influence of substrate thickness. It can be concluded that sic semiconductor devices have superior properties and the study of the parameters is of great significance in selecting the suitable diffusion region of silicon carbide diodes.
【學(xué)位授予單位】：河北工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TN31

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本文編號(hào)：1909020