本文選題：量子阱紅外探測(cè)器 + 卷曲型微管��； 參考：《中國(guó)科學(xué)院上海技術(shù)物理研究所》2017年博士論文

【摘要】：紅外探測(cè)是現(xiàn)代探測(cè)技術(shù)的一個(gè)重要發(fā)展方向,它極大地拓展了人類認(rèn)知自然和宇宙的視野。而紅外探測(cè)器作為紅外探測(cè)的核心技術(shù)之一,已發(fā)展了近兩百年。在20世紀(jì)80年代,以GaAs/AlGaAs為代表的量子阱結(jié)構(gòu)紅外探測(cè)器開始出現(xiàn)并蓬勃發(fā)展,隨后在國(guó)防、航空航天、天文探測(cè)和民用等領(lǐng)域展現(xiàn)出巨大且廣泛的前景。量子阱紅外探測(cè)器基于阱內(nèi)子帶躍遷原理來實(shí)現(xiàn)紅外探測(cè),其表現(xiàn)出材料生長(zhǎng)和器件制備工藝成熟、大面積均勻性好、成品率高、響應(yīng)速度快等優(yōu)點(diǎn),但同時(shí)也具有器件量子效率小、工作溫度低、不能吸收垂直入射光(n型)等缺點(diǎn)。因此,如何提高器件性能指標(biāo)成為量子阱紅外探測(cè)器的重點(diǎn)研究方向之一。到目前為止,采用電子態(tài)調(diào)控手段,如優(yōu)化電子輸運(yùn)特性和調(diào)整器件工作模式,已達(dá)到極限;但是,利用光場(chǎng)調(diào)控方法,如通過光耦合結(jié)構(gòu)來增強(qiáng)量子阱光吸收進(jìn)而提高器件性能,卻在不斷發(fā)展中。在本論文中,基于三維螺旋微管的光捕獲特性,一種三維管狀結(jié)構(gòu)量子阱紅外探測(cè)器被提出并進(jìn)行了大量研究,包括:1.設(shè)計(jì)了三維管狀量子阱紅外探測(cè)器的材料、結(jié)構(gòu)和工藝流程并進(jìn)行了器件制備。具體來說,利用數(shù)值模擬方法分析管狀結(jié)構(gòu)的電磁耦合情況,并優(yōu)化器件的結(jié)構(gòu)和尺寸;依據(jù)結(jié)構(gòu)特征確定材料相應(yīng)功能層及各層的厚度,并使用能帶計(jì)算軟件設(shè)計(jì)量子阱的結(jié)構(gòu);結(jié)合材料和器件結(jié)構(gòu)來定制工藝流程,并設(shè)計(jì)和制備對(duì)應(yīng)的掩膜板;進(jìn)行大量的實(shí)際工藝操作,完善各個(gè)流程步驟最終制備出管狀器件。2.進(jìn)行了三維管狀量子阱紅外探測(cè)器的光耦合和響應(yīng)特性研究。實(shí)驗(yàn)制備出響應(yīng)峰位于6.5μm的管狀器件,在60 K工作溫度和0.65 V偏壓下,測(cè)得其峰值光電流響應(yīng)率為381 mA/W,對(duì)應(yīng)的量子效率為7.2%。通過與45o斜入射QWIP器件對(duì)比,發(fā)現(xiàn)了管狀結(jié)構(gòu)具有提高器件響應(yīng)率和量子效率的能力。在詳細(xì)分析微管的二維電場(chǎng)分布情況后,提出了其中空結(jié)構(gòu)能夠?qū)⒁徊糠秩肷涔庀拗圃谄鋬?nèi)發(fā)生多次內(nèi)反射從而增強(qiáng)量子阱光吸收的解釋。測(cè)試管狀器件在外界不同角度入射光下的黑體響應(yīng)后,發(fā)現(xiàn)其展現(xiàn)出寬角度(-70o,70o)光耦合特性。此外,微管圈數(shù)對(duì)器件性能的影響也被研究。3.分析了薄膜卷曲時(shí)應(yīng)力態(tài)變化對(duì)管狀量子阱紅外探測(cè)器的子帶躍遷影響。在測(cè)試平面和管狀器件的光電流響應(yīng)譜后,發(fā)現(xiàn)應(yīng)變量子阱薄膜的應(yīng)力釋放會(huì)導(dǎo)致其響應(yīng)峰發(fā)生微小紅移。理論分析表明,當(dāng)平面應(yīng)變薄膜卷成微管,管壁內(nèi)部應(yīng)力態(tài)的變化導(dǎo)致了量子阱的導(dǎo)帶邊能級(jí)偏移,進(jìn)而影響到阱內(nèi)電子束縛態(tài)能級(jí)和波函數(shù),并最終造成子帶躍遷產(chǎn)生的電流譜峰位移動(dòng)。同時(shí),不同偏壓下器件的光電流響應(yīng)譜也被測(cè)試,表明外加電場(chǎng)會(huì)導(dǎo)致其峰位發(fā)生藍(lán)移,這是由對(duì)稱量子阱的子帶躍遷量子限制斯塔克效應(yīng)造成的,且理論計(jì)算值與實(shí)驗(yàn)結(jié)果相符合。為了進(jìn)一步改善器件性能,三維管狀諧振腔量子阱紅外探測(cè)器被設(shè)計(jì)出。它利用微管諧振腔的諧振效應(yīng)在管壁內(nèi)形成光學(xué)共振模,其強(qiáng)烈的光場(chǎng)強(qiáng)度能顯著提高量子阱光吸收。模擬結(jié)果表明,當(dāng)微管共振波長(zhǎng)處于量子阱吸收譜范圍內(nèi)時(shí),器件的響應(yīng)譜上將疊加一系列尖峰,且該尖峰具有高Q值。
[Abstract]:Infrared detection is an important development direction of modern detection technology. It greatly expands the human cognition of nature and the vision of the universe. As one of the core technologies of infrared detection, infrared detector has been developed for nearly two hundred years. In 1980s, the infrared detector of quantum well structure, represented by GaAs/AlGaAs, began to appear and flourished. Development has shown great and extensive prospects in the fields of national defense, aerospace, astronomical detection and civil. The quantum well infrared detector is based on the principle of the inner subband transition of the well to realize infrared detection. It shows that the material growth and device preparation technology are mature, large area uniformity, high yield and fast response speed, but at the same time It also has the disadvantages of small quantum efficiency, low working temperature and can not absorb the vertical incident light (n type). Therefore, how to improve the performance index of the device has become one of the key research directions of the quantum well infrared detector. So far, the use of electronic state control means, such as optimizing the transmission characteristics of the electric subunit and adjusting the working mode of the device, has reached the limit. However, using optical field control methods, such as enhancing quantum well absorption by optical coupling structure and improving the performance of devices, it is developing. In this paper, based on the optical capture characteristics of three-dimensional spiral microtubules, a three-dimensional tubular structure quantum well infrared detector has been proposed and carried out a lot of research, including: 1. a three-dimensional tube is designed. The material, structure and process flow of a quantum well infrared detector are made and the device is prepared. In particular, the electromagnetic coupling of the tubular structure is analyzed by the numerical simulation method and the structure and size of the device are optimized. The thickness of the corresponding functional layer and each layer of the material is determined according to the structural characteristics, and the quantum of the energy band calculation software is used to design the quantum. The structure of the well is combined with the material and device structure to customize the process flow, and the corresponding mask plate is designed and prepared. A large number of actual process operations are carried out, and the tubular device.2. is finally prepared by various process steps to study the optical coupling and response characteristics of the three-dimensional tubular quantum well infrared detector. The experimental response peak is located at 6.5. Under the 60 K working temperature and 0.65 V bias, the peak photocurrent response rate is 381 mA/W, and the corresponding quantum efficiency is 7.2%. by comparing with the 45o oblique incidence QWIP device. It is found that the tubular structure has the ability to improve the response rate and the quantum efficiency of the device. After detailed analysis of the two-dimensional electric field distribution of microtubule, it is proposed. The space structure can explain the optical absorption of the quantum well by restricting a part of the incident light within it to enhance the optical absorption of the quantum well. Test tube devices show the wide angle (-70o, 70O) optical coupling characteristics after the blackbody response under different angles of incident light. Moreover, the influence of the number of microtubules on the performance of the device is also studied. .3. analyses the influence of the stress state on the subband transition of the tubular quantum well infrared detector when the film is curled. After the test plane and the photoelectron response spectrum of the tube, it is found that the stress release of the strain well film will lead to the slight redshift of the response peak. The change of the stress state of the part leads to the shift of the band side energy level in the quantum well, and then affects the energy level and wave function of the electron bound state in the well, and eventually causes the peak position of the current spectrum produced by the subband transition. At the same time, the photoelectric response spectrum of the devices under different bias voltage is also tested, indicating that the applied electric field will lead to the blue shift of its peak position. In order to further improve the performance of the device, a three-dimensional tubular resonant cavity quantum well infrared detector is designed. It uses the resonance effect of the microtube resonator to form the optical resonance mode in the tube wall and its strong light field intensity. The simulation results show that when the resonant wavelength of the microtubule is within the spectrum of quantum well absorption spectrum, the response spectrum of the device will be superimposed on a series of peaks, and the peak has a high Q value.
【學(xué)位授予單位】：中國(guó)科學(xué)院上海技術(shù)物理研究所
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN215

【參考文獻(xiàn)】

相關(guān)期刊論文 前10條

1 陳景明;舒斌;吳繼寶;范林西;張鶴鳴;胡輝勇;宣榮喜;宋建軍;;Enhanced electroluminescence from a free-standing tensilely strained germanium nanomembrane light-emitting diode[J];Journal of Semiconductors;2015年10期

2 韓梅梅;劉迎;高震;馬招;;薄壁小管徑微管生物傳感器特性[J];納米技術(shù)與精密工程;2014年05期

3 羅躍川;韓尚君;王雪敏;吳衛(wèi)東;唐永建;;GaAs/AlGaAs多層膜刻蝕的陡直度[J];信息與電子工程;2011年03期

4 衛(wèi)婷婷;;量子阱紅外探測(cè)器研究現(xiàn)狀及展望[J];科技信息;2009年22期

5 何偉;焦斌斌;薛惠瓊;歐毅;陳大鵬;葉甜春;;非制冷紅外焦平面陣列進(jìn)展[J];電子工業(yè)專用設(shè)備;2008年05期

6 李寧;郭方敏;熊大元;陸衛(wèi);王文新;黃綺;周均銘;;256×1甚長(zhǎng)波量子阱紅外焦平面研究[J];紅外與激光工程;2006年06期

7 呂宇強(qiáng);胡明;吳淼;張之圣;劉志剛;;熱紅外探測(cè)器的最新進(jìn)展[J];壓電與聲光;2006年04期

8 蘇艷梅,種明,張艷冰,胡小燕,孫永偉,趙偉,陳良惠;128×160元GaAs/AlGaAs多量子阱長(zhǎng)波紅外焦平面陣列[J];半導(dǎo)體學(xué)報(bào);2005年10期

9 劉世建,徐重陽,曾祥斌;非致冷紅外焦平面陣列用探測(cè)材料[J];電子元件與材料;2002年10期

10 連潔,王青圃,程興奎,魏愛儉;量子阱紅外探測(cè)器的研究與應(yīng)用[J];光電子·激光;2002年10期

，

本文編號(hào)：1908114