本文選題：超低電壓 + 大寬長比��； 參考：《蘇州大學》2015年碩士論文

【摘要】：超低電壓微納電子學是當代學術界和工業(yè)界迎合綠色設計的關注熱點。設計等效為毫伏數(shù)量級的閾值電壓MOSFET,主流方法是大寬長比和體源偏置,改良的方法是前兩法的融合。在江蘇省自然科學基金支撐下(BK20141196),本文工作目標有二:一是綜論實現(xiàn)超低電壓模擬電路的硅極限供電壓與基本設計理念;二是從單管出發(fā),建構推導大寬長比條件下的n A級漏電流,并改良設計極少管子構造的關鍵模擬電路。旨在重點分析李文石教授發(fā)明的3MOSFET施密特非門,主要工作內(nèi)容:一是,構建大寬長比的單管I-V特性解析式,應用解析非門濾波器和前述李氏電路[1](3MOSFET);二是,基于已知的體偏置法構建完成了CMOS非門的I-V特性對比。關鍵電路的關鍵結果是:CMOS非門濾波器的供電壓可降至500m V;3MOSFET工作在100m V;3MOSFET的雙閾值模型包含6個參數(shù),誤差小于10%。為推動腦健康微電子學的健康發(fā)展,本工作做出了新的研發(fā)積累。
[Abstract]:Ultra-low voltage micro-nano electronics is the focus of attention in modern academia and industry to cater to green design. A threshold voltage MOSFET equivalent to millivolts is designed. The mainstream methods are large aspect ratio and bulk source bias. The improved method is the fusion of the first two methods. Supported by the Natural Science Foundation of Jiangsu Province, this paper has two working objectives: one is to discuss the basic design concept of silicon limiting power supply voltage of ultra-low voltage analog circuit, the other is to proceed from single transistor. The n A leakage current is derived under the condition of large aspect ratio, and the key analog circuit which is rarely constructed is improved. This paper focuses on the analysis of 3MOSFET Schmitt gate invented by Professor Li Wen Shi. The main work is as follows: first, to construct a large aspect ratio single transistor I-V characteristic analytical formula, to apply the analytic non-gate filter and the aforementioned Li's circuit [1] / 3 MOSFETs; the other is to construct the analytical non-gate filter and the aforementioned Li's circuit. The I-V characteristics of CMOS non-gate are compared based on the known volume bias method. The key result of the key circuit is that the power supply voltage of the 10: CMOS non-gate filter can be reduced to 500m V3 MOSFET operating in 100m V3 MOSFET with six parameters and an error less than 10. In order to promote the healthy development of brain health microelectronics, this work has made a new research and development accumulation.
【學位授予單位】：蘇州大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN386

【參考文獻】

相關期刊論文 前1條

1 嚴曉浪,吳曉波;低壓低功耗模擬集成電路的發(fā)展[J];微電子學;2004年04期

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本文編號：1904697