化學氣相沉積法硅薄膜的制備及其性能
發(fā)布時間:2018-05-17 15:31
本文選題:硅薄膜 + 防腐性 ; 參考:《大連工業(yè)大學學報》2017年02期
【摘要】:運用化學氣相沉積技術(shù)在不銹鋼表面沉積了一層致密的硅薄膜,研究了沉積溫度及硅烷氣體壓力對硅薄膜性能的影響。對沉積的硅薄膜進行了EDS能譜分析,通過SEM掃描電鏡對硅薄膜微觀形貌進行表征,并對沉積硅薄膜的不銹鋼樣品進行電化學分析,研究了硅薄膜對不銹鋼抗腐蝕性能的影響。結(jié)果表明,化學氣相沉積溫度為390℃、硅烷氣壓為10kPa時金屬表面形成的硅薄膜防腐性能最佳。
[Abstract]:A dense silicon film was deposited on the surface of stainless steel by chemical vapor deposition. The effects of deposition temperature and pressure of silane gas on the properties of silicon film were studied. The microstructure of silicon thin films was characterized by SEM scanning electron microscope (SEM). The effect of silicon films on corrosion resistance of stainless steel was studied by electrochemical analysis of stainless steel samples deposited by silicon thin films. The results show that when the chemical vapor deposition temperature is 390 鈩,
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