氧化鋅薄膜的微觀結(jié)構(gòu)及其結(jié)晶性能研究
發(fā)布時(shí)間:2018-05-16 15:16
本文選題:氧化鋅 + 薄膜 ; 參考:《中南民族大學(xué)學(xué)報(bào)(自然科學(xué)版)》2017年04期
【摘要】:以普通玻璃作為襯底材料,采用射頻磁控濺射方法制備了氧化鋅(ZnO)透明導(dǎo)電薄膜,通過(guò)X射線衍射(XRD)和X射線光電子能譜(XPS)測(cè)試,研究了襯底溫度對(duì)薄膜微觀結(jié)構(gòu)及其結(jié)晶性能的影響.結(jié)果表明:所制備的ZnO薄膜均為(002)晶面擇優(yōu)取向生長(zhǎng)的多晶薄膜,其微觀結(jié)構(gòu)和結(jié)晶性能與襯底溫度密切相關(guān).襯底溫度對(duì)ZnO薄膜的織構(gòu)系數(shù)TC(hkl)、平均晶粒尺寸、位錯(cuò)密度、晶格應(yīng)變和晶格常數(shù)都具有不同程度的影響,當(dāng)襯底溫度為800 K時(shí),ZnO薄膜樣品的織構(gòu)系數(shù)TC(002)最高(4.929)、平均晶粒尺寸最大(20.91 nm)、位錯(cuò)密度最小(2.289×10~(15)line·m~(-2))、晶格應(yīng)變最低(2.781×10~(-3)),具有最高的(002)晶面擇優(yōu)取向生長(zhǎng)性和最佳的微觀結(jié)構(gòu)性能.
[Abstract]:Zinc oxide (ZnO) transparent conductive thin films were prepared by RF magnetron sputtering with ordinary glass as substrates. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) measurements were performed. The effect of substrate temperature on the microstructure and crystallization properties of the films was investigated. The results show that all the ZnO films are polycrystalline films with preferential orientation on the crystal plane. The microstructure and crystallization properties of the films are closely related to the substrate temperature. The substrate temperature has different effects on the average grain size, dislocation density, lattice strain and lattice constant of ZnO thin films. When the substrate temperature is 800K, the texture coefficient TCn002) is the highest (4.929g), the average grain size is maximum (20.91nm), the minimum dislocation density is 2.289 脳 10~(15)line ~ (2), and the lattice strain is 2.781 脳 10 ~ (10) ~ (-3), which has the highest orientation and the best microstructure and properties.
【作者單位】: 中南民族大學(xué)電子信息工程學(xué)院;
【基金】:湖北省自然科學(xué)基金資助項(xiàng)目(2011CDB418)
【分類號(hào)】:TN304.21
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