本文選題：門極換流晶閘管 + 模型　； 參考：《西安理工大學(xué)》2017年碩士論文

【摘要】：集成門極換流晶閘管(IGCT)是在門極可關(guān)斷晶閘管(GTO)的基礎(chǔ)上發(fā)展而來的一種大功率電力半導(dǎo)體器件。在中高壓電力電子裝置及大功率領(lǐng)域具有很好的應(yīng)用前景。為了拓寬IGCT的應(yīng)用范圍,需要建立一種能準(zhǔn)確表征其開關(guān)特性的電路仿真模型。本文根據(jù)GCT的結(jié)構(gòu)特點(diǎn)與工作原理,提出了一種GCT的M-2T-3R等效電路模型。以4.5kV/4kA的非對稱IGCT為例,利用Cadence-Pspice仿真軟件研究了 GCT的開關(guān)特性,分析了模型參數(shù)和門極寄生電感對GCT開關(guān)特性的影響,并通過與器件數(shù)值分析結(jié)果對比,驗(yàn)證了 GCT電路仿真模型的準(zhǔn)確性和適用性。主要研究內(nèi)容如下:首先,簡要介紹了 GCT的結(jié)構(gòu)特點(diǎn)及工作原理,根據(jù)GCT內(nèi)部換流過程和雙晶體管模型,在GCT門-陰極間引入MOSFET,提出了 GCT單元的M-2T-3R等效電路模型。第二,分析了 GCT多陰極并聯(lián)結(jié)構(gòu)的特點(diǎn),將GCT陰極環(huán)數(shù)等效為并聯(lián)單元個(gè)數(shù),建立了 GCT的M-2T-3R電路仿真模型,確定了模型中PNP晶體管與NPN晶體管的電流放大系數(shù)、渡越時(shí)間、偏置電容,以及GCT的靜態(tài)電阻和內(nèi)部分布電感等模型參數(shù)值,分析了關(guān)鍵模型參數(shù)對器件開關(guān)特性的影響。第三,分析了 M-2T-3R電路仿真模型的準(zhǔn)確性和適用性。通過將4.5kV/4kAIGCT的電路模型仿真結(jié)果與器件數(shù)值分析結(jié)果、實(shí)測波形及應(yīng)用手冊中的性能指標(biāo)等進(jìn)行對比,其關(guān)鍵特性參數(shù)基本滿足指標(biāo)要求,表明該模型能較準(zhǔn)確地表征GCT的換流過程及開關(guān)特性;并將該電路仿真模型分別用于4.5kV/3.6kA和4.5kV/2.2kA系列IGCT,其開關(guān)特性仿真曲線與器件數(shù)值分析的結(jié)果也基本一致,說明該模型可適用于不同電流等級的IGCT。本文建立的GCT電路仿真模型可用于IGCT的驅(qū)動與保護(hù)電路的設(shè)計(jì)及應(yīng)用系統(tǒng)的仿真研究。
[Abstract]:Integrated gate commutation thyristor (IGCTT) is a kind of high-power semiconductor device developed on the basis of gate turn-off thyristor (GTOT). It has a good application prospect in the field of medium and high voltage power electronic devices and high power. In order to widen the application range of IGCT, it is necessary to establish a circuit simulation model which can accurately characterize its switching characteristics. According to the structure and working principle of GCT, a M-2T-3R equivalent circuit model of GCT is presented in this paper. Taking asymmetric IGCT of 4.5kV/4kA as an example, the switching characteristics of GCT are studied by using Cadence-Pspice simulation software. The effects of model parameters and gate parasitic inductors on the switching characteristics of GCT are analyzed, and the results are compared with the results of numerical analysis. The veracity and applicability of GCT circuit simulation model are verified. The main research contents are as follows: firstly, the structure and working principle of GCT are briefly introduced. According to the internal commutation process of GCT and the model of double transistor, MOSFETs are introduced between GCT gate and cathode, and the M-2T-3R equivalent circuit model of GCT cell is proposed. Secondly, the characteristics of GCT multi-cathode parallel structure are analyzed, the number of GCT cathode rings is equivalent to the number of parallel units, the M-2T-3R circuit simulation model of GCT is established, and the current magnification factor and transit time of PNP transistor and NPN transistor in the model are determined. The influence of the key model parameters on the switching characteristics of the device is analyzed, such as the bias capacitance, the static resistance and the internal distributed inductance of the GCT. Thirdly, the accuracy and applicability of M-2T-3R circuit simulation model are analyzed. By comparing the simulation results of the circuit model of 4.5kV/4kAIGCT with the results of the device numerical analysis, the measured waveforms and the performance indexes in the application manual, the key characteristic parameters can basically meet the requirements of the indicators. It is shown that the model can accurately characterize the commutation process and switching characteristics of GCT, and the circuit simulation model is used in 4.5kV/3.6kA and 4.5kV/2.2kA series respectively, and the simulation curves of switching characteristics are in good agreement with the results obtained by numerical analysis of the devices. The model can be applied to IGCTs with different current levels. The simulation model of GCT circuit established in this paper can be used in the design of drive and protection circuit of IGCT and the simulation of application system.
【學(xué)位授予單位】：西安理工大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN34

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