本文選題：壓接式IGBT + 封裝�。� 參考：《華北電力大學(xué)(北京)》2017年碩士論文

【摘要】：壓接式IGBT模塊具有通流能力大、無焊接點、無引線、低熱阻、失效短路等特點,可廣泛的應(yīng)用于高壓直流輸電系統(tǒng)、鐵路牽引、風(fēng)力發(fā)電、高壓大功率工業(yè)裝備驅(qū)動等諸多領(lǐng)域。壓接式IGBT模塊在封裝結(jié)構(gòu)上與焊接式IGBT模塊存在的差異使得壓接式IGBT模塊的封裝工藝和實現(xiàn)方式上也完全不同于焊接式IGBT模塊。本文首先以壓接式IGBT樣管為基礎(chǔ),通過Comsol仿真介紹了器件在無公差下力場和熱力耦合后器件的受力分布,并著重分析芯片在兩個物理場形變、應(yīng)力、接觸壓力的變化過程;通過ANSYS仿真介紹了器件在壓力場下不同公差組件對芯片接觸壓力的影響,并得出在外圈子模組大鉬片增高6μm下,中心芯片接觸壓力為0N。為了提高器件內(nèi)部壓力一致性,需要求器件封裝后整體公差在6μm以內(nèi)。其次,壓接式IGBT組件較多,由組件間各個接觸層引入的接觸熱阻占器件整體熱阻比重較大。因此,降低器件接觸熱阻對器件散熱非常關(guān)鍵。本文通過應(yīng)用納米銀燒結(jié)技術(shù)對芯片和大鉬片燒結(jié),并通過熱阻測試驗證了燒結(jié)減少器件熱阻的有效性。將測試條件設(shè)為仿真邊界,通過Comsol仿真得到每個接觸層的接觸熱阻大小。最后,對比器件在不同結(jié)構(gòu)下芯片接觸壓力的分布,提出一種提高芯片均壓的方法,并通過仿真得以驗證。
[Abstract]:Pressure-connected IGBT module has the characteristics of large current transmission capacity, no welding point, no lead, low thermal resistance, failure and short circuit. It can be widely used in HVDC transmission system, railway traction, wind power generation, etc. High-voltage and high-power industrial equipment drive and many other fields. Because of the difference between the encapsulation structure of the IGBT module and the IGBT module, the encapsulation technology and implementation of the IGBT module are completely different from that of the IGBT module. In this paper, based on the pressure-bonded IGBT tube, the mechanical distribution of the device under the coupling of force field and thermodynamics without tolerance is introduced by Comsol simulation, and the variation process of the chip deformation, stress and contact pressure in the two physical fields is analyzed emphatically. The influence of different tolerance components on the contact pressure of the chip is introduced by ANSYS simulation. It is concluded that the contact pressure of the central chip is 0 Nwhen the large molybdenum sheet of the outer circle module increases 6 渭 m. In order to improve the internal pressure consistency of the device, it is necessary to obtain the overall tolerance of the device within 6 渭 m. Secondly, there are many IGBT components, and the contact thermal resistance introduced by the different contact layers of the components accounts for a large proportion of the overall thermal resistance of the device. Therefore, reducing the contact thermal resistance of the device is very important to the heat dissipation of the device. In this paper, nano-silver sintering technology was used to sintered chips and molybdenum chips, and the effectiveness of sintering to reduce the thermal resistance of the devices was verified by thermal resistance test. The test condition is set as the simulation boundary and the contact thermal resistance of each contact layer is obtained by Comsol simulation. Finally, by comparing the distribution of the chip contact pressure in different structures, a method to increase the average voltage of the chip is proposed and verified by simulation.
【學(xué)位授予單位】：華北電力大學(xué)(北京)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN322.8

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