本文選題：熱絲化學(xué)氣相沉積(HWCVD) + 介電常數(shù)��； 參考：《半導(dǎo)體技術(shù)》2017年05期

【摘要】：采用熱絲化學(xué)氣相沉積法在n型直拉單晶硅圓片表面雙面沉積厚度為10 nm的本征非晶硅(α-Si∶H)薄膜。利用光譜型橢偏測(cè)試儀和準(zhǔn)穩(wěn)態(tài)光電導(dǎo)法研究熱絲電流、H_2體積流量和熱絲與襯底之間的距離對(duì)α-Si∶H薄膜結(jié)構(gòu)和鈍化效果的影響。結(jié)果表明,熱絲電流為21.5~23.5 A時(shí),鈍化后硅片的少子壽命隨著熱絲電流的增加呈現(xiàn)先增加后降低的趨勢(shì),熱絲電流為23.0 A時(shí),鈍化效果最好;H_2體積流量為5~20 cm~3/min時(shí),少子壽命隨著H_2體積流量的增加呈現(xiàn)先增加后降低的規(guī)律,體積流量為15 cm~3/min時(shí),鈍化效果最好;熱絲與襯底間距為4~5 cm時(shí),隨著間距的增加,薄膜的結(jié)構(gòu)由晶化向非晶化轉(zhuǎn)變,在間距為4.5 cm時(shí)硅片的鈍化效果達(dá)到最優(yōu)。
[Abstract]:偽 -Si: h films with a thickness of 10 nm were deposited on the surface of n-type Czochralski wafer by hot filament chemical vapor deposition. The effects of the volume flow rate of hot filament current and the distance between hot filament and substrate on the structure and passivation effect of 偽 -Si: h thin film were studied by spectroscopic ellipsometry and quasi-steady state photoconductivity method. The results show that the minority carrier lifetime of passivated silicon wafer increases first and then decreases with the increase of hot filament current when the hot filament current is 21.5 ~ 23.5 A. when the hot filament current is 23.0 A, the passivating effect is best when the volume flow rate of H2 is 520 cm~3/min. The minority carrier lifetime increases first and then decreases with the increase of volume flow rate of H2. When the volume flow rate is 15 cm~3/min, the passivation effect is the best, and the structure of thin films changes from crystallization to non-crystallization when the distance between hot filament and substrate is 4 ~ 5 cm. When the distance is 4.5 cm, the passivation effect of silicon wafer is optimal.
【作者單位】： 南昌大學(xué)光伏研究院;
【基金】：國(guó)家自然科學(xué)基金資助項(xiàng)目(61306084,61464007,51561022) 江蘇省能量轉(zhuǎn)換材料與技術(shù)重點(diǎn)實(shí)驗(yàn)室開(kāi)放課題基金資助項(xiàng)目(NJ20160032) 江西省重點(diǎn)研發(fā)計(jì)劃-技術(shù)引進(jìn)與合作研究-重點(diǎn)項(xiàng)目(2016BBH80043)
【分類(lèi)號(hào)】：TN304.055

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