本文選題：電子束光刻 + 微結(jié)構(gòu)�。� 參考：《東南大學(xué)》2016年碩士論文

【摘要】：電子束光刻技術(shù)(EBL)是一項新型的微細(xì)加工與分析技術(shù)。它是將微納系統(tǒng)特征尺寸推向微細(xì)化的關(guān)鍵技術(shù)。由于EBL具有分辨率高、易于控制、加工精度高且能在不需昂貴掩膜的光刻膠上加工微結(jié)構(gòu)等優(yōu)點。使其成為微細(xì)加工技術(shù)研究的熱點。精確的模擬三維微結(jié)構(gòu)的加工工藝過程能有效的縮短研發(fā)周期,節(jié)約實驗成本。本文圍繞電子束光刻技術(shù)直接在光刻膠介質(zhì)上加工三維微結(jié)構(gòu)等問題。利用Monte Carlo方法建立能量沉積模型,求解工藝參數(shù)。然后利用元胞自動機與開發(fā)的混合算法模擬實驗所得的微.結(jié)構(gòu)。最后運用曝光劑量校正的方法提高微結(jié)構(gòu)的分辨率。其中主要研究內(nèi)容如下：1、基于電子束光刻技術(shù)的原理,建立電子散射模型,模擬電子與固體的相互作用。2、利用Monte Carlo方法建立能量沉積模型,求解電子束光刻加工工藝參數(shù)。并探究各工藝參數(shù)對能量沉積的影響。3、給定三維微結(jié)構(gòu)的實驗設(shè)計方案,控制不同的曝光劑量加工三維微結(jié)構(gòu)。4、針對電子散射無規(guī)律及微結(jié)構(gòu)模擬的復(fù)雜性的問題,本文提出元胞自動機與Monte Carlo混合算法,并利用該算法與元胞自動機算法模擬由實驗獲得的三維微結(jié)構(gòu)。利用曝光劑量校正的方法提高微結(jié)構(gòu)的分辨率。
[Abstract]:Electron beam lithography (EBL) is a new micromachining and analysis technique. It is the key technology to push the feature size of micro-nano system to micro-refinement. EBL has the advantages of high resolution, easy control, high machining accuracy and the ability to process microstructures on photoresist without expensive mask. It has become a hot spot in the research of micro-machining technology. Accurate simulation of three-dimensional micro-structure processing process can effectively shorten the research and development cycle and save the cost of experiment. In this paper, the electron beam lithography technology is used to fabricate three-dimensional microstructures directly on the photoresist medium. The energy deposition model is established by Monte Carlo method, and the process parameters are solved. Then we use cellular automata and the developed hybrid algorithm to simulate the experimental results. Structure. Finally, the resolution of microstructures is improved by using the method of exposure dose correction. The main research contents are as follows: 1. Based on the principle of electron beam lithography, the electron scattering model is established to simulate the interaction between electrons and solids. The energy deposition model is established by using Monte Carlo method to solve the process parameters of electron beam lithography. The effects of various technological parameters on energy deposition. 3. Given the experimental design scheme of three dimensional microstructures and controlling different exposure doses to process three dimensional microstructures, this paper aims at the irregularity of electron scattering and the complexity of the simulation of microstructures. In this paper, a hybrid algorithm of cellular automata and Monte Carlo is proposed, and the three-dimensional microstructure obtained from experiments is simulated by using the algorithm and the cellular automata algorithm. The resolution of microstructures is improved by the method of exposure dose correction.
【學(xué)位授予單位】：東南大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2016
【分類號】：TN305.7

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