本文選題：GaN薄膜 + 二次離子譜��； 參考：《西安電子科技大學(xué)》2015年碩士論文

【摘要】：GaN基LED(發(fā)光二極管)作為一種新型的固態(tài)光源,具有低功耗,長(zhǎng)壽命,高發(fā)光效率等優(yōu)點(diǎn),在顯示、照明和指示方面發(fā)揮著越來(lái)越大的作用。GaN及其伴生的三元甚至四元化合物因其可實(shí)現(xiàn)覆蓋全可見(jiàn)光譜的優(yōu)勢(shì)贏得了市場(chǎng)的青睞。目前,市場(chǎng)上用于制備Ga N材料的主流生長(zhǎng)設(shè)備還是MOCVD(金屬有機(jī)化合物化學(xué)氣相淀積),但其不可避免地引入了一些C和O等外來(lái)雜質(zhì)的吸附,這勢(shì)必會(huì)對(duì)器件的性能產(chǎn)生較大影響。此外,最近已經(jīng)有報(bào)道稱(chēng)雜質(zhì)在不同極性薄膜中的結(jié)合程度不同,并可能影響其它重要元素(比如In)的吸附。本文就是在此背景下開(kāi)展研究,采用普通而實(shí)用的藍(lán)寶石襯底,依托自主研發(fā)的MOCVD設(shè)備,進(jìn)行了一系列不同極性GaN和InGaN薄膜的制備,并比較了不同極性面中C、O等雜質(zhì)的吸附情況后得出相關(guān)結(jié)論。此外,還對(duì)國(guó)際研究熱點(diǎn)半極性面In GaN中In的結(jié)合效率進(jìn)行了初步探討,主要研究工作整理如下:1.在不同極性GaN薄膜中進(jìn)行了C、H和O等雜質(zhì)的吸附情況比較,通過(guò)二次離子譜等表征手段對(duì)元素結(jié)合進(jìn)行了定量分析。發(fā)現(xiàn)了Ga面中C的結(jié)合要高出N面,表明極性會(huì)影響C的結(jié)合。根據(jù)PL能譜中黃帶峰的強(qiáng)弱對(duì)比得出非極性a面中的C結(jié)合明顯高出c面,同時(shí)也從原子結(jié)構(gòu)上對(duì)此進(jìn)行了解釋。此外,還發(fā)現(xiàn)了,C在a面和c面中受溫度的影響呈現(xiàn)出相反的變化趨勢(shì)(在a面中隨溫度降低而增加;在c面中卻減少)。這些結(jié)果表明C的吸附受到多種環(huán)境因素的影響,極性的選擇與溫度變化都可能成為主要影響因素。2.通過(guò)對(duì)比,觀察到了O在N面中要高出Ga面近兩個(gè)數(shù)量級(jí),在非極性a面中也明顯高出極性Ga面,說(shuō)明了N面和非極性面對(duì)O有著較強(qiáng)的吸附能力。還發(fā)現(xiàn)溫度對(duì)非極性a面樣品形貌和結(jié)晶質(zhì)量的影響非常大,同時(shí)也對(duì)O的吸附產(chǎn)生了較大影響。測(cè)試結(jié)果表明,隨著溫度的升高,O的吸附反而降低,這不同于前人已報(bào)道的結(jié)果。相應(yīng)的實(shí)驗(yàn)結(jié)果表明,溫度改變引起的形貌差異影響了O的結(jié)合,這表明形貌也是影響其結(jié)合的一個(gè)因素。3.發(fā)現(xiàn)了H的結(jié)合不受溫度的影響,但在半極性面和極性面中H的吸附存在較為明顯的變化,表明極性影響H的結(jié)合。還發(fā)現(xiàn)了Si的結(jié)合只受溫度的影響,隨溫度升高,GaN中吸附的Si濃度增大。此外,在含In氮化物材料中,In的結(jié)合效率受到H濃度變化的影響。同時(shí)還從理論和實(shí)驗(yàn)上發(fā)現(xiàn)了In在半極性(112)面中的結(jié)合效率略高于其在極性(002)面中結(jié)合效率。
[Abstract]:GaN based LED (light emitting diode) as a new solid-state light source, has the advantages of low power consumption, long life, high luminous efficiency, etc. Lighting and indication play a more and more important role. Gan and its accompanying ternary or even quaternary compounds have won the market favor for their advantages of covering all visible spectra. At present, MOCVD (Organometallic compounds Chemical Vapor deposition) is the main growth equipment used to prepare gan materials on the market, but it inevitably introduces some foreign impurities such as C and O adsorption. This is bound to have a greater impact on the performance of the device. In addition, it has recently been reported that impurities bind differently in different polar films and may affect the adsorption of other important elements, such as In. Under this background, this paper studies a series of GaN and InGaN thin films with different polarity by using ordinary and practical sapphire substrates and relying on self-developed MOCVD equipment. The adsorption of Con O and other impurities in different polar surfaces was compared and the relevant conclusions were obtained. In addition, the binding efficiency of in in in GaN, an international hotspot, is preliminarily discussed. The main research work is as follows: 1. The adsorption of impurities such as Con H and O in GaN thin films with different polarity was compared. The elemental binding was quantitatively analyzed by means of secondary ion spectrum and other characterization methods. It is found that the binding of C in Ga plane is higher than that in N plane, indicating that polarity affects the binding of C. According to the comparison of the intensity of the yellow band peak in the PL spectrum, it is found that the C binding in the nonpolar a plane is obviously higher than that in the c plane, and the atomic structure is also explained. In addition, it is also found that the effect of temperature on the C plane and a plane is opposite (increasing with the temperature decreasing in the a plane and decreasing in the c plane). These results indicate that the adsorption of C is affected by many environmental factors, and the choice of polarity and the change of temperature may be the main influencing factors. By comparison, it is observed that O is nearly two orders of magnitude higher than Ga surface in N plane and obviously higher than polar Ga surface in non-polar a plane, which indicates that O in N plane and nonpolar face O have strong adsorption ability. It is also found that temperature has great influence on the morphology and crystallization quality of non-polar a-plane samples, and also on the adsorption of O. The results show that the adsorption of O decreases with the increase of temperature, which is different from the previous reported results. The experimental results show that the morphology difference caused by the change of temperature affects the bonding of O, which indicates that the morphology is also a factor affecting the combination of O and O. It was found that the binding of H was not affected by temperature, but the adsorption of H on the semi-polar surface and the polar surface had obvious changes, indicating that the polarity affected the binding of H. It is also found that the bonding of Si is only affected by temperature, and the concentration of Si adsorbed in gan increases with the increase of temperature. In addition, the binding efficiency of in containing nitride is affected by the change of H concentration. It is also found theoretically and experimentally that the binding efficiency of in in in is slightly higher than that in polar plane 002).
【學(xué)位授予單位】：西安電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TN304

【相似文獻(xiàn)】

相關(guān)碩士學(xué)位論文 前1條

1 蔣仁淵;不同非極性與半極性Ⅲ族氮化物材料物性研究[D];西安電子科技大學(xué);2015年

，

本文編號(hào)：1867908