本文選題：記憶效應 + p-GaN　； 參考：《半導體技術》2017年10期

【摘要】：研究了低溫(LT)GaN和AlN不同插入層對抑制Mg摻雜p-GaN金屬有機化學氣相沉積外延中存在的記憶效應的影響,外延生長p-GaN緩沖層,制作具有該緩沖層的Al GaN/GaN高電子遷移率晶體管(HEMT),并對該器件進行電學測試。二次離子質(zhì)譜儀測試表明p-GaN上10 nm厚的LT-GaN插入層相比于2 nm厚的AlN插入層能更好地抑制Mg擴散。霍爾測試表明,2 nm厚的AlN插入層的引入和GaN存在較大的晶格失配會引入位錯,進而會降低Al GaN/GaN HEMT的電子遷移率以及增加其方塊電阻;含有10 nm厚的LT-GaN插入層的p-GaN作為緩沖層的Al GaN/GaN HEMT,其方塊電阻、電子遷移率以及二維電子氣(2DEG)密度分別為334.9Ω/,1 923 cm~2/(V·s)和9.68×1012cm~(-2)。器件具有很好的直流特性,其飽和電流為470 mA/mm,峰值跨導為57.7 m S/mm,電流開關比為3.13×10~9。
[Abstract]:The effect of different insertion layers of LT-GaN and AlN on the memory effect of Mg-doped p-GaN metal organic chemical vapor deposition epitaxy was studied. The p-GaN buffer layer was grown by epitaxial growth. The Al GaN/GaN high electron mobility transistor with this buffer layer is fabricated and the device is tested by electrical test. The results of secondary ion mass spectrometer show that the LT-GaN intercalation layer with 10 nm thickness on p-GaN can restrain mg diffusion better than that of AlN with 2 nm thickness. Hall measurements show that the introduction of AlN intercalation layer with thickness of 2 nm and the existence of large lattice mismatch in GaN will lead to dislocation, which will decrease the electron mobility of Al GaN/GaN HEMT and increase its square resistance. The sheet resistance, electron mobility and two-dimensional electron gas 2DEG densities of Al GaN/GaN HEMTs with p-GaN as buffer layer are 334.9 惟 / 1 923 cm~2/(V / s and 9.68 脳 10 12 cm ~ (-1) 路m ~ (-2) 路m ~ (-1) 路min ~ (-1) ~ (-1) 路min ~ (-1) 路m ~ (-1), respectively. The device has good DC characteristics, the saturation current is 470 Ma / mm, the peak transconductance is 57.7 Ms / mm, and the current-switching ratio is 3.13 脳 10 ~ (-9) mm.
【作者單位】： 蘇州工業(yè)園區(qū)服務外包職業(yè)學院;中國科學院蘇州納米技術與納米仿生研究所;華中科技大學武漢光電國家實驗室;
【基金】：國家自然科學基金青年科學基金資助項目(11404372) 江蘇省重點研發(fā)計劃資助項目(BE2016084) 2017年江蘇省高職院校教師專業(yè)帶頭人高端研修資助項目(2017GRGDYX041)
【分類號】：TN386

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