本文選題：光硅通孔 + 3D集成電路��； 參考：《西安電子科技大學(xué)》2015年碩士論文

【摘要】：在信息大爆炸的今天,數(shù)據(jù)傳輸正朝著容量大、速度快和損耗低的方向發(fā)展,傳統(tǒng)意義上的電互連已經(jīng)無(wú)法滿足用戶日益增長(zhǎng)的需求,這就促使了光通信互連技術(shù)的產(chǎn)生。并且緊跟著集成電路各項(xiàng)技術(shù)的發(fā)展,電路的集成度越來(lái)越高,晶體管的最小特征尺寸也越來(lái)越小,它們一直遵循著摩爾定律在不斷進(jìn)步。但是當(dāng)晶體管的特征尺寸減小到納米量級(jí)后,其基本已經(jīng)達(dá)到物理極限,要繼續(xù)提升電路性能就得從其他方面來(lái)著手。目前認(rèn)為三維(3D)集成電路是未來(lái)的發(fā)展方向,而其中的硅通孔技術(shù)是實(shí)現(xiàn)電路三維集成的關(guān)鍵。當(dāng)前主要是在通孔中傳輸電信號(hào),盡管能夠提高電路的性能,但也有其局限性,人們將眼光投向了光互連與三維集成電路結(jié)合起來(lái)的三維光電混合集成電路,使得光信號(hào)能夠在硅通孔中傳輸。本文就是基于此種研究背景,主要開(kāi)展激光器與光硅通孔的耦合特性研究。論文首先根據(jù)光硅通孔與光波導(dǎo)的相似性,利用光波導(dǎo)的相關(guān)理論對(duì)光硅通孔進(jìn)行理論分析,得到了其中的模場(chǎng)分布。然后通過(guò)對(duì)半導(dǎo)體激光器的模場(chǎng)和光硅通孔基模模場(chǎng)進(jìn)行了高斯模場(chǎng)分布近似,根據(jù)模式耦合理論,利用半導(dǎo)體激光器發(fā)出光束的模場(chǎng)與光硅通孔的基模模場(chǎng)在快慢軸方向上的重疊積分,得到半導(dǎo)體激光器與光硅通孔的耦合效率公式。在高斯模場(chǎng)分布近似的前提下,結(jié)合半導(dǎo)體激光器產(chǎn)生的橢圓形光束的特殊性質(zhì),從模場(chǎng)半徑匹配和相位匹配的角度,描述了半導(dǎo)體激光器與光硅通孔之間的光耦合理論,并分析了不同傳播距離、橫向位置偏差以及角向偏差等因素對(duì)耦合效率的影響,還利用Rsoft軟件進(jìn)行了整體的建模與仿真驗(yàn)證,證明了理論分析的正確性。最后從模場(chǎng)匹配的角度,提出兩種提高耦合效率的方法,一種是改變半導(dǎo)體激光器結(jié)構(gòu),另外一種是在激光器與硅通孔之間加入光學(xué)元件來(lái)改變耦合方式。
[Abstract]:With the information explosion, data transmission is developing towards the direction of large capacity, high speed and low loss. The traditional electrical interconnection can not meet the increasing needs of users, which promotes the generation of optical communication interconnection technology. With the development of integrated circuit technology, the integration of circuits becomes higher and higher, and the minimum characteristic size of transistors becomes smaller and smaller. However, when the characteristic size of transistors is reduced to nanoscale, it has basically reached the physical limit. To continue to improve circuit performance, we have to start from other aspects. At present, it is considered that 3D integrated circuit is the development direction in the future, and the silicon through hole technology is the key to realize the 3D integration of the circuit. At present, it is mainly to transmit electrical signals in the through hole. Although it can improve the performance of the circuit, it also has its limitations. People have turned their eyes to the three-dimensional optoelectronic hybrid integrated circuit, which combines optical interconnection with three-dimensional integrated circuit. The optical signal can be transmitted through the silicon hole. Based on this kind of research background, the coupling characteristics of laser and optical-silicon through hole are studied in this paper. Firstly, according to the similarity between the optical silicon through hole and the optical waveguide, the theoretical analysis of the optical silicon through hole is carried out by using the optical waveguide theory, and the mode field distribution of the optical silicon through hole is obtained. Then the mode field of semiconductor laser and the fundamental mode field of optical silicon pass hole are approximated by Gao Si mode field, according to the mode coupling theory, Based on the overlapping integration of the mode field of the laser beam and the fundamental mode field of the optical silicon through hole in the direction of the fast and slow axis, the coupling efficiency formula between the semiconductor laser and the optical silicon through hole is obtained. On the premise of the approximate mode field distribution of Gao Si, combined with the special properties of elliptical beam produced by semiconductor laser, the optical coupling theory between semiconductor laser and optical silicon through hole is described from the angle of mode field radius matching and phase matching. The effects of different propagation distance, lateral position deviation and angular deviation on the coupling efficiency are analyzed. The whole modeling and simulation are also carried out by using Rsoft software, which proves the correctness of the theoretical analysis. Finally, from the angle of mode field matching, two methods are proposed to improve the coupling efficiency: one is to change the structure of semiconductor lasers, the other is to add optical elements between the laser and the silicon through hole to change the coupling mode.
【學(xué)位授予單位】：西安電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TN248.4

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