本文選題：溫度傳感器芯片 + 帶隙基準��； 參考：《傳感技術(shù)學報》2017年05期

【摘要】：設(shè)計了一種利用電阻比值校正一階溫度系數(shù)帶隙基準電路的非線性溫度特性來實現(xiàn)低溫度系數(shù)的高精度低溫度系數(shù)帶隙基準源;同時設(shè)置了修調(diào)電路提高基準電壓的輸出精度。該帶隙基準源采用0.8μm Bi CMOS(Bipolar-CMOS)工藝進行流片,帶隙基準電路所占面積大小為0.04 mm~2。測試結(jié)果表明:在5 V電源電壓下,在溫度-40℃~125℃范圍內(nèi),基準電壓的溫度系數(shù)為1.2×10~(-5)/℃,基準電流的溫度系數(shù)為3.77×10~(-4)/℃;電源電壓在4.0 V~7.0 V之間變化時,基準電壓的變化量為0.4 m V,電源調(diào)整率為0.13 m V/V;基準電流的變化量為變化量約為0.02μA,電源調(diào)整率為6.7 n A/V。
[Abstract]:A high precision and low temperature coefficient bandgap reference source with low temperature coefficient is designed by using resistance ratio to correct the nonlinear temperature characteristics of the first order temperature coefficient bandgap reference circuit, and the output precision of the reference voltage is improved by setting a modified adjusting circuit. The bandgap reference is fabricated by 0.8 渭 m BiCMOS- Bipolar-CMOS process. The area of the band-gap reference circuit is 0.04 mm / 2. The test results show that the temperature coefficient of reference voltage is 1.2 脳 10 ~ (-5) / 鈩，

本文編號：1861563