本文選題：氮化鎵 + HEMT��； 參考：《東南大學(xué)》2016年碩士論文

【摘要】：作為第三代半導(dǎo)體材料,氮化鎵(GaN)具有禁帶寬度寬、臨界擊穿電場大以及電子飽和速度高等優(yōu)點,且AlGaN/GaN異質(zhì)結(jié)會在異質(zhì)結(jié)界面處形成濃度較高的二維電子氣(wo Dimensional Electron Gas, 2DEG),因此GaN高電子遷移率晶體管(High Electron Mobility Transistors, HEMT)適合作為功率器件。然而,常規(guī)的GaN HEMT器件為耗盡型器件,且由于GaN材料本身泄露電流較大,使得器件擊穿電壓不高,因此,為了將GaN HEMT器件應(yīng)用于功率開關(guān)領(lǐng)域,高壓增強型GaN HEMT器件研究意義重大。本文旨在設(shè)計性能優(yōu)越的600V增強型GaN HEMT器件。首先,以p-GaN柵極GaN HEMT器件為基本結(jié)構(gòu),采用二維仿真軟件SILVACO分析了p-GaN層、AlGaN勢壘層、柵漏間距、AlGaN緩沖層等結(jié)構(gòu)參數(shù)對器件轉(zhuǎn)移特性、導(dǎo)通態(tài)IV特性、擊穿特性以及電容特性的影響,從而得出優(yōu)化的p-GaN柵極GaNHEMT器件結(jié)構(gòu)；此外,還針對p-GaN柵極GaN HEMT器件閾值電壓不夠高的缺點,進(jìn)一步提出了一種絕緣埋層GaN HEMT器件,使得器件的閾值電壓提升了2.14倍。本文還對600V增強型GaN HEMT器件在較高漏極偏壓下由于緩沖層缺陷所導(dǎo)致的電流崩塌效應(yīng)展開了研究。研究表明,電子在柵極邊緣強電場的作用下注入緩沖層并被缺陷捕獲是造成電流崩塌效應(yīng)的主要原因,高缺陷濃度和深能級缺陷都會導(dǎo)致電流崩塌效應(yīng)加劇。最終,從減少注入緩沖層電子數(shù)目的角度出發(fā),本文還提出了一種P型埋層結(jié)構(gòu),使得器件漏極電流減小的百分比從原本的11.0%降低至5.12%,顯著減小了器件的電流崩塌效應(yīng)。
[Abstract]:As the third generation semiconductor material, gallium nitride (gan) has the advantages of wide bandgap, high critical breakdown electric field and high electron saturation velocity. And AlGaN/GaN heterojunction can form high concentration two-dimensional electron gas at the heterojunction surface, so GaN high electron mobility transistor (GaN) is suitable for power devices. However, the conventional GaN HEMT device is a depleted device, and the breakdown voltage is not high because of the large leakage current of the GaN material. Therefore, in order to apply the GaN HEMT device to the power switch field, It is of great significance to study high voltage enhanced GaN HEMT devices. The purpose of this paper is to design 600 V enhanced GaN HEMT device. Firstly, with the p-GaN gate GaN HEMT device as the basic structure, the transfer characteristics and on-state IV characteristics of p-GaN layer and AlGaN buffer layer are analyzed by using the two-dimensional simulation software SILVACO, such as p-GaN layer and AlGaN buffer layer. The influence of breakdown characteristics and capacitance characteristics on the structure of p-GaN gate GaNHEMT devices is obtained. In addition, an insulating buried layer GaN HEMT device is proposed to overcome the disadvantage that the threshold voltage of p-GaN gate GaN HEMT devices is not high enough. The threshold voltage of the device is increased by 2.14 times. In this paper, the effect of current collapse caused by buffer layer defects in 600V enhanced GaN HEMT devices with high drain bias voltage is also studied. It is shown that the effect of current collapse is mainly caused by the injection of electrons into the buffer layer under the action of a strong electric field at the edge of the gate, and the effect of current collapse is aggravated by high defect concentration and deep level defect. Finally, from the point of view of reducing the number of electrons injected into the buffer layer, a P-type buried layer structure is proposed, which reduces the percentage of drain current decrease from 11.0% to 5.12%, which significantly reduces the current collapse effect of the device.
【學(xué)位授予單位】：東南大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2016
【分類號】：TN386

【參考文獻(xiàn)】

相關(guān)期刊論文 前6條

1 趙海發(fā);楊鋒英;;Si基GaN功率器件的發(fā)展態(tài)勢[J];電子元件與材料;2014年07期

2 管邦虎;孔岑;耿習(xí)嬌;陸海燕;倪金玉;周建軍;孔月嬋;馮軍;陳堂勝;;高耐壓Si基GaN功率電子器件[J];固體電子學(xué)研究與進(jìn)展;2013年06期

3 席崇選;劉金婷;王偉樂;劉亞慧;宋瑩;;GaN功率器件的發(fā)展及應(yīng)用[J];黑龍江科技信息;2013年20期

4 沈宏昌;任春江;李忠輝;陳堂勝;張斌;高濤;;GaN寬帶大功率MMIC開關(guān)[J];固體電子學(xué)研究與進(jìn)展;2013年02期

5 張波;陳萬軍;鄧小川;汪志剛;李肇基;;氮化鎵功率半導(dǎo)體器件技術(shù)[J];固體電子學(xué)研究與進(jìn)展;2010年01期

6 徐軍,周圣明,楊衛(wèi)橋,夏長泰,彭觀良,蔣成勇,周國清,鄧佩珍;InN和GaN系襯底材料的研究和發(fā)展[J];中國有色金屬學(xué)報;2004年S1期

，

本文編號：1853914