發(fā)布時(shí)間：2018-05-04 18:11

  本文選題：氮化鎵 + 發(fā)光二極管�。� 參考：《中國石油大學(xué)(華東)》2015年碩士論文

【摘要】：GaN作為新一代半導(dǎo)體材料,具有禁帶寬度大、熱導(dǎo)率高、載流子遷移率高、發(fā)光效率高等優(yōu)點(diǎn),是理想的短波長LED器件的制備材料。GaN基LED器件憑借節(jié)能環(huán)保、響應(yīng)速度快、體積小、效率高等特點(diǎn),已廣泛應(yīng)用于固態(tài)照明、背光源等領(lǐng)域。但GaN基LED的發(fā)展仍面臨許多難題,例如效率下降現(xiàn)象:在大電流工作條件下,LED器件的發(fā)光效率出現(xiàn)下降的現(xiàn)象。至于效率下降現(xiàn)象的原因,至今仍未有定論。許多學(xué)者對此現(xiàn)象進(jìn)行研究,提出了以下幾種可能來解釋效率下降現(xiàn)象:電子泄露、載流子注入效率低、Auger復(fù)合、結(jié)溫等。抑制效率下降現(xiàn)象一直是改善GaN基LED器件性能的關(guān)鍵問題之一。在本文中,首先,介紹了發(fā)光二極管的發(fā)展及其國內(nèi)外的研究現(xiàn)狀和研究意義;其次,簡要介紹了氮化鎵材料的基本特性,電子阻擋層和多量子阱結(jié)構(gòu),并理解了效率下降現(xiàn)象;然后,對模擬用APSYS軟件作簡要介紹,并詳細(xì)闡述了其數(shù)值模擬基本模型與理論;最后,給出了數(shù)值模擬數(shù)據(jù)以及所提出的InGaN/AlGaN/GaN多量子阱電子阻擋層結(jié)構(gòu)。通過數(shù)據(jù)分析,所提出的InGaN/AlGaN/GaN多量子阱電子阻擋層能夠有效的提高器件的光學(xué)性能和電學(xué)性能。模擬的電子阻擋層獲得了更大的勢壘高度,使其更有效的限制電子的泄露,同時(shí),多量子阱主動(dòng)區(qū)內(nèi)的電子與空穴濃度有所提升,且分布更加均勻。相對于傳統(tǒng)LED結(jié)構(gòu),我們所提LED結(jié)構(gòu)的輸出功率和內(nèi)量子效率分別提高了12.7%和12.3%,此外,效率下降由37.1%降至31.1%,最大內(nèi)量子效率由0.817升至0.838。InGaN/AlGaN/GaN多量子阱電子阻擋層的應(yīng)用,使得模擬用LED器件的光輸出功率、內(nèi)量子效率和勢壘高度都有了很大的提高,證明了此電子阻擋層能夠有效的抑制效率下降現(xiàn)象。
[Abstract]:As a new generation semiconductor material, GaN has many advantages, such as wide band gap, high thermal conductivity, high carrier mobility and high luminescence efficiency. It is an ideal short wavelength LED device fabrication material. Gan based LED device has the advantages of energy saving, environmental protection and fast response speed. Small size, high efficiency and other characteristics, has been widely used in solid state lighting, backlight and other fields. However, the development of GaN based LED still faces many difficulties, for example, the phenomenon of efficiency decline: under the condition of high current operation, the luminous efficiency of GaN device decreases. As for the reasons for the decline in efficiency, there is still no conclusion. Many scholars have studied this phenomenon and put forward the following possibilities to explain the phenomenon of efficiency decline: electron leakage, low carrier injection efficiency and Auger complex, junction temperature, and so on. One of the key problems in improving the performance of GaN-based LED devices is to suppress the decrease of efficiency. In this paper, firstly, the development of light-emitting diodes and its research status and significance at home and abroad are introduced. Secondly, the basic properties of gallium nitride materials, electronic barrier layer and multi-quantum well structure are briefly introduced. Then, the basic model and theory of numerical simulation are introduced in detail. Finally, the numerical simulation data and the proposed electronic barrier structure of InGaN/AlGaN/GaN multiple quantum wells are given. Through data analysis, the proposed InGaN/AlGaN/GaN multiple quantum well electronic barrier layer can effectively improve the optical and electrical properties of the device. The simulated barrier layer gains a higher barrier height, which makes it more effective to limit the leakage of electrons. At the same time, the concentration of electrons and holes in the active region of multiple quantum wells is increased and the distribution is more uniform. Compared with the traditional LED structure, the output power and internal quantum efficiency of the proposed LED structure are increased by 12.7% and 12.30.In addition, the efficiency decreases from 37.1% to 31.1%, and the maximum internal quantum efficiency increases from 0.817 to the application of the 0.838.InGaN/AlGaN/GaN multiple quantum well electron barrier layer. The optical output power, internal quantum efficiency and barrier height of the analog LED device are greatly improved, which proves that the electron barrier layer can effectively suppress the phenomenon of efficiency decline.
【學(xué)位授予單位】：中國石油大學(xué)(華東)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN312.8

【相似文獻(xiàn)】

相關(guān)期刊論文 前10條

1 ;藍(lán)色LED發(fā)光效率提高50%[J];電視技術(shù);2003年10期

2 ;松下藍(lán)色LED發(fā)光效率提高50%[J];光盤技術(shù);2003年05期

3 劉一兵;;關(guān)于提高高亮度發(fā)光二極管發(fā)光效率的探討[J];現(xiàn)代顯示;2007年11期

4 Peter Green;;簡單高效地控制高亮度LED[J];今日電子;2008年06期

5 孫號(hào)夕;;可輕松提高發(fā)光效率的發(fā)光元件在日本問世[J];功能材料信息;2008年04期

6 鄭冬冬;;美國Cree開發(fā)出254lm/W的超高效率白色LED[J];半導(dǎo)體信息;2012年03期

7 樊東黎;;更有效的LED新技術(shù)[J];金屬熱處理;2012年10期

8 海信;;有關(guān)LED的最新動(dòng)向[J];光源與照明;2007年02期

9 ;日本九州大學(xué)開發(fā)出發(fā)光效率達(dá)86%的有機(jī)EL材料[J];分析測試學(xué)報(bào);2012年05期

10 Howard Myers;Greensboro,NC;;自我控制的神秘LED[J];電子設(shè)計(jì)技術(shù);2006年08期

相關(guān)會(huì)議論文 前10條

1 ;白色LED即將迎來“爆發(fā)”時(shí)刻[A];2006年全國LED顯示技術(shù)應(yīng)用及產(chǎn)業(yè)發(fā)展研討會(huì)論文集[C];2006年

2 瞿述;李宏建;許雪梅;黃生祥;夏輝;彭景翠;;有機(jī)/聚合物電致發(fā)光器件及發(fā)光效率問題[A];第四屆中國功能材料及其應(yīng)用學(xué)術(shù)會(huì)議論文集[C];2001年

3 魏彪;馬曉昕;黃永錢;馮鵬;米德伶;;基于CCD的中子透射成像中閃爍屏發(fā)光效率研究[A];2006年西南地區(qū)第九屆NDT學(xué)術(shù)年會(huì)暨2006年全國射線檢測新技術(shù)研討會(huì)論文集[C];2006年

4 武良文;潘錫明;簡奉任;;高亮度綠光發(fā)光二極體制作技術(shù)[A];海峽兩岸第十三屆照明科技與營銷研討會(huì)專題報(bào)告暨論文集[C];2006年

5 顧智企;章愛民;倪杰;孫伯彥;泮海茵;劉加海;;彩色ACPDP發(fā)光效率的測試方法及計(jì)算研究[A];中國電子學(xué)會(huì)真空電子學(xué)分會(huì)第十一屆學(xué)術(shù)年會(huì)論文集[C];1997年

6 iJ上，

本文編號(hào)：1844052