本文選題：太赫茲無(wú)源器件 + 高性能��； 參考：《電子科技大學(xué)》2015年碩士論文

【摘要】：太赫茲波因其特殊的頻段位置,具有與其它頻段的電磁波不同的性質(zhì),這使得太赫茲技術(shù)在諸多方面具有重大的科學(xué)意義和廣泛的應(yīng)用前景,成為當(dāng)前學(xué)術(shù)研究的熱點(diǎn)。太赫茲無(wú)源器件作為太赫茲系統(tǒng)中重要組成部分,其高性能的設(shè)計(jì)和最佳的實(shí)現(xiàn)方式具有非常積極和重要的意義。本文圍繞太赫茲頻段波導(dǎo)濾波器、定向耦合器展開(kāi)研究�；诰哂袑�(shí)用前景的微細(xì)加工技術(shù)與超精密機(jī)械加工技術(shù),通過(guò)考察現(xiàn)今國(guó)內(nèi)外發(fā)展動(dòng)態(tài)以展開(kāi)對(duì)高性能無(wú)源器件研究�；跒V波器和定向耦合器的設(shè)計(jì)理論,通過(guò)精確設(shè)計(jì),結(jié)合超精密機(jī)械加工技術(shù)和微細(xì)加工技術(shù)中的深反應(yīng)離子刻蝕(DRIE)加工工藝完成了高性能的器件制作。其主要研究工作和成果可以概括為:1、太赫茲波導(dǎo)濾波器研究(1)在太赫茲低頻段,基于超精密機(jī)械加工技術(shù),采用多種耦合形式設(shè)計(jì)出結(jié)構(gòu)簡(jiǎn)單、性能優(yōu)越的220 GHz以及340 GHz兩種波導(dǎo)濾波器。加工成品為集濾波結(jié)構(gòu)和法蘭盤(pán)結(jié)構(gòu)于一體的H面偏移感性窗耦合結(jié)構(gòu)220 GHz波導(dǎo)濾波器和E面膜孔感性窗耦合結(jié)構(gòu)340 GHz波導(dǎo)濾波器。采用矢量網(wǎng)絡(luò)分析儀測(cè)試系統(tǒng)測(cè)試成品元件S參數(shù),測(cè)試結(jié)果表明波導(dǎo)濾波器插入損耗均小于1dB,回波損耗優(yōu)于17dB,測(cè)試結(jié)果與仿真結(jié)果完全吻合,設(shè)計(jì)出性能優(yōu)越的波導(dǎo)濾波器。(2)在太赫茲較高頻段,基于DRIE加工工藝,采用多種耦合結(jié)構(gòu)設(shè)計(jì)出0.95THz波導(dǎo)濾波器,為國(guó)內(nèi)外首次將頻段提高到近1THz的波導(dǎo)無(wú)源器件的研究與探索。目前0.95THz波導(dǎo)濾波器已經(jīng)研制成功,濾波結(jié)構(gòu)封裝于硅質(zhì)長(zhǎng)方體單元中,并設(shè)計(jì)出與之配套的夾具協(xié)助測(cè)試,測(cè)試結(jié)果良好,與仿真結(jié)果基本吻合。2、太赫茲波導(dǎo)10dB定向耦合器的研制工作基于DRIE加工工藝,加工制備了E面340GHz矩形波導(dǎo)10dB定向耦合器,采用階梯型五分支線電橋耦合形式和田字型電橋耦合形式兩套方案。耦合結(jié)構(gòu)封裝于硅質(zhì)長(zhǎng)方體單元中,并設(shè)計(jì)配套夾具進(jìn)行測(cè)試,測(cè)試結(jié)果與設(shè)計(jì)基本吻合。本文成功研制了高性能太赫茲無(wú)源器件,對(duì)太赫茲系統(tǒng)的研究發(fā)展具有重大的實(shí)用價(jià)值。
[Abstract]:Because of its special position of frequency band, terahertz wave has different properties from other electromagnetic waves, which makes terahertz technology has great scientific significance and wide application prospect in many aspects, and has become a hot topic in current academic research. As an important part of terahertz system, the high performance design and optimal implementation of THz passive devices are of great significance. This paper focuses on the THz waveguide filter and directional coupler. Based on the micromachining technology and ultra-precision machining technology, the research on high performance passive devices is carried out by reviewing the development trends at home and abroad. Based on the design theory of filter and directional coupler, high performance devices were fabricated by precise design, combined with ultra-precision machining technology and deep reactive ion etching technology. The main research work and results can be summarized as follows: 1) in terahertz low frequency band, based on ultra-precision machining technology, simple structure is designed in various coupling forms. Excellent performance of 220 GHz and 340 GHz waveguide filter. The finished product is an H-plane offset inductive window coupling structure of 220 GHz waveguide filter and an E-face hole inductive window coupling structure of 340 GHz waveguide filter which integrates the filter structure and the flange structure. The S parameters of the finished components were measured by vector network analyzer. The results show that the insertion loss of waveguide filter is less than 1 dB, and the return loss is better than 17 dB. The test results are in good agreement with the simulation results. The waveguide filter with superior performance is designed in the high frequency band of terahertz. Based on the fabrication technology of DRIE, the 0.95THz waveguide filter is designed using a variety of coupling structures. It is the first time to study and explore the passive waveguide devices which can improve the frequency band to near 1THz at home and abroad. At present, the 0.95THz waveguide filter has been successfully developed. The filter structure is encapsulated in the silicon cuboid unit, and a matching fixture is designed to assist the test. The test results are satisfactory. The development of 10dB directional coupler for terahertz waveguide is based on the DRIE process. The E-plane 340GHz rectangular waveguide 10dB directional coupler is fabricated. Two kinds of coupling schemes are adopted: the coupling form of stepped five branch line bridge and the coupling form of Tian zigzag bridge. The coupling structure is encapsulated in the silicon cuboid unit, and the matching fixture is designed for testing. The test results are in good agreement with the design. In this paper, high performance THz passive devices have been successfully developed, which is of great practical value for the research and development of terahertz systems.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TN713;TN622
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本文編號(hào)：1843965