本文選題：中階梯光柵 + 同質(zhì)掩模�。� 參考：《蘇州大學(xué)》2015年碩士論文

【摘要】：本文圍繞全息離子束刻蝕制作閃耀光柵的工藝特點,對全息離子束刻蝕制作中階梯光柵的具體工藝進(jìn)行深入研究。主要包含了以下幾個方面的內(nèi)容。首先,介紹了中階梯光柵的特點,以及制作中階梯光柵兩種常用的方法：機械刻劃和單晶硅濕法刻蝕法。介紹了國內(nèi)外對中階梯光柵的研究現(xiàn)狀。并探討了使用離子束刻蝕制作中階梯光柵的意義。簡要介紹了離子源系統(tǒng)以及模擬離子束刻蝕的線段運動算法。主要分析了線段算法形成槽形輪廓的過程、演化進(jìn)程中線段交點的處理方法和處理表面拐角、邊緣時去點的幾種情況。理論分析了制作55°中階梯光柵所需要同質(zhì)掩模的槽形結(jié)構(gòu)。基于直接制作大閃耀角槽形對同質(zhì)掩模的要求較高且制作難度較大,通過制作35°閃耀角對應(yīng)的反閃耀角55°,來實現(xiàn)中階梯光柵槽形的制作。詳細(xì)敘述了同質(zhì)掩模制作過程中的工藝方法。運用刻蝕光刻膠和鉻雙層掩模來制作同質(zhì)掩模,對比分析了刻蝕鉻掩模的兩種方法：干法離子束刻蝕和濕法腐蝕液腐蝕。實驗中運用了反應(yīng)離子刻蝕(RIE)刻蝕雙層掩模,制作了槽形與理論分析要求相近的同質(zhì)掩模。實驗制作中,我們使用RIE刻蝕制作同質(zhì)掩模,然后通過Ar離子束傾斜刻蝕同質(zhì)掩模,制作出了80線/毫米,閃耀角為52.5°,反閃耀角為27.8°的中階梯光柵。通過理論分析,計算了入射波長在450nm-700nm,入射角為52.5°時理想中階梯光柵槽形和實驗制作槽形的衍射效率,分析比較了兩者的差異。對實際槽形進(jìn)行衍射效率測量,并與理論計算值進(jìn)行了比較。
[Abstract]:Based on the technological characteristics of holographic ion beam etching for making blazed gratings, the specific process of step gratings in holographic ion beam etching is studied in this paper. Mainly contains the following aspects of the content. Firstly, the characteristics of middle step gratings are introduced, and two common methods in fabrication are introduced: mechanical etching and wet etching of monocrystalline silicon. The research status of middle step grating at home and abroad is introduced. The significance of step gratings in fabrication by ion beam etching is also discussed. The ion source system and the line segment motion algorithm for simulating ion beam etching are briefly introduced. This paper mainly analyzes the process of line segment algorithm forming groove contour, the processing method of line segment intersection in the evolution process, and several cases of processing surface corner and edge point. The groove structure of the homogeneous mask needed for 55 擄step grating fabrication is theoretically analyzed. Based on the high requirement and difficulty to fabricate the homogeneous mask directly, the grooves of the middle step grating can be fabricated by making the reverse blazing angle 55 擄corresponding to the 35 擄blaze angle. The manufacturing process of homogeneous mask is described in detail. Two methods of etching chromium mask, dry ion beam etching and wet etching solution, are compared and analyzed by using etching photoresist and chromium double-layer mask to make homogeneous mask. In the experiment, the double layer mask was etched by reactive ion etching (RIEs), and the homogeneous mask with similar groove shape and theoretical requirement was made. In the experiment, we used RIE to fabricate homogeneous mask, then we made the middle step grating with 80 lines / mm, 52.5 擄blazing angle and 27.8 擄reverse blazing angle by ar ion beam oblique etching homogeneous mask. Through theoretical analysis, the diffraction efficiency of the ideal grating grooves and experimental grooves is calculated at an incident wavelength of 450 nm to 700 nm and an incident angle of 52.5 擄, and the differences between the two are analyzed and compared. The diffraction efficiency of the actual groove is measured and compared with the theoretical calculation.
【學(xué)位授予單位】：蘇州大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：O436.1;TN305.7

【參考文獻(xiàn)】

相關(guān)期刊論文 前1條

1 徐向東,洪義麟,傅紹軍,王占山;全息離子束刻蝕衍射光柵[J];物理;2004年05期

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本文編號：1843594