本文選題：有機(jī)場(chǎng)效應(yīng)晶體管 + 共軛聚合物��； 參考：《北京化工大學(xué)》2015年碩士論文

【摘要】：與傳統(tǒng)無機(jī)場(chǎng)效應(yīng)晶體管相比,有機(jī)場(chǎng)效應(yīng)晶體管(OFETs),尤其是聚合物場(chǎng)效應(yīng)晶體管,具有成本低,制備工藝簡單,可制成大面積柔性器件等優(yōu)點(diǎn)而備受人們關(guān)注。但是目前聚合物場(chǎng)效應(yīng)晶體管的遷移率及穩(wěn)定性與無機(jī)場(chǎng)效應(yīng)晶體管相比仍較低,還不能完全滿足實(shí)際應(yīng)用的需求。為了提高聚合物場(chǎng)效應(yīng)晶體管的性能,本論文主要從材料的選擇與器件的優(yōu)化兩個(gè)方面開展研究,具體如下：1、以萘并二雜環(huán)為給體單元的四個(gè)聚合物P(NDT3-BT), P(NDT3-BO),P(NDF3-BT)和P(NDF3-BO)為有機(jī)半導(dǎo)體層制備了OFETs器件,對(duì)器件的電學(xué)性能進(jìn)行研究,分析了聚合物主鏈中硫和氧原子對(duì)OFETs性能產(chǎn)生的影響。同時(shí)對(duì)聚合物薄膜的形貌結(jié)構(gòu)進(jìn)行了表征。發(fā)現(xiàn)在聚合物半導(dǎo)體薄膜中,基于萘并二噻吩的給-受體共聚物比基于萘并二呋喃的給-受體共聚物有更緊密的分子排列,使相應(yīng)的器件表現(xiàn)出更好的場(chǎng)效應(yīng)性能。2、在共軛聚合物PNDF3DPP-C24和PNDF3IID-C24分子中,以萘并二呋喃為給體單元,受體單元分別為二吡咯(DPP)和異靛藍(lán)(IID)。利用這兩個(gè)聚合物構(gòu)筑了底柵底接觸結(jié)構(gòu)的場(chǎng)效應(yīng)晶體管器件,溝道長度為50μm、溝道寬度為1400[μm且退火溫度為120℃時(shí),得到最佳的器件性能。其中PNDF3DPP-C24的遷移率為5.31 cm2 V-1 s-1,而PNDF3IID-C24的遷移率為3.35 cm2 V-1 s-1。利用AFM和GIXRD對(duì)聚合物的薄膜性能和結(jié)晶性進(jìn)行表征,并依據(jù)其結(jié)果解釋了該類材料具有優(yōu)秀場(chǎng)效應(yīng)晶體管器件性能的原因。3、以烷基苯取代的萘并二噻吩和DPP構(gòu)建的2-D共軛聚合物(PNDTP-DPP)為研究對(duì)象,采用溶液法制備聚合物薄膜并構(gòu)筑了OFETs器件,研究了共軛側(cè)鏈對(duì)聚合物材料及其器件載流子傳輸性能的影響。實(shí)驗(yàn)發(fā)現(xiàn),聚合物薄膜中分子間具有強(qiáng)的相互作用,因此其π-π堆積距離只有3.7A。該強(qiáng)的分子間相互作用使PNDTP-DPP表現(xiàn)出良好的場(chǎng)效應(yīng)性能,其空穴遷移率達(dá)到0.86 cm2 V-1 s-1,表明共軛側(cè)鏈減小了分子鏈之間的距離,有效提高了載流子在分子鏈之間的跳躍傳輸能力。
[Abstract]:Compared with the traditional inorganic field effect transistors, the field effect transistors, especially the polymer field effect transistors, have many advantages, such as low cost, simple fabrication process, large area flexible devices and so on. However, the mobility and stability of polymer field effect transistors are still low compared with inorganic field effect transistors. In order to improve the performance of polymer field-effect transistors, this thesis mainly focuses on the selection of materials and the optimization of devices. As follows: 1, OFETs devices were prepared by using four polymers, PNDT3-BTN, PNDT3-BOF3-BTN and PNDT3-BONF3-BOO) as organic semiconductor layers. The electrical properties of the devices were studied. The effects of sulfur and oxygen atoms in the main chain of the polymer on the properties of OFETs were analyzed. At the same time, the morphology and structure of polymer films were characterized. It is found that in polymer semiconductor films, the copolymers based on naphthalene dithiophene have closer molecular arrangement than those based on naphthalene difurans. In the conjugated polymer PNDF3DPP-C24 and PNDF3IID-C24, naphthalene difuran was used as donor unit, and the receptor units were dipyrrolidine (DPP) and isoindigo (IIDD), respectively. The FET devices with bottom gate bottom contact structure are constructed by using these two polymers. The optimal device performance is obtained when the channel length is 50 渭 m, the channel width is 1400 [渭 m, and annealing temperature is 120 鈩，

本文編號(hào)：1837396