基于CMOS工藝的太赫茲成像讀出電路陣列的研究
發(fā)布時(shí)間:2018-05-02 20:23
本文選題:太赫茲 + CMOS; 參考:《北京理工大學(xué)》2015年碩士論文
【摘要】:太赫茲技術(shù)從技術(shù)發(fā)展之初就得到了科學(xué)各界的高度關(guān)注,特別是太赫茲成像系統(tǒng)被廣泛應(yīng)用于醫(yī)學(xué)成像,機(jī)場(chǎng)安檢和物質(zhì)檢測(cè)領(lǐng)域,得到了深入地研究。而半導(dǎo)體工藝的發(fā)展,使得利用集成電路技術(shù)實(shí)現(xiàn)低成本和便攜式太赫茲成像系統(tǒng)有了可能。因此,本文將利用CMOS集成電路工藝,設(shè)計(jì)可應(yīng)用于太赫茲FET平方律直接檢波成像系統(tǒng)的讀出電路陣列。本文的主要內(nèi)容如下: 首先,本文分析了FET平方律檢波的原理,并在此基礎(chǔ)上說(shuō)明了基于該成像原理的讀出電路的設(shè)計(jì)要求與要點(diǎn)。接著,本文又對(duì)讀出電路中的噪聲進(jìn)行了分析,并對(duì)CMOS中的MOS管進(jìn)行了小信號(hào)模型和噪聲模型的建模,,進(jìn)一步指明了在低頻下讀出電路的設(shè)計(jì)要點(diǎn)是f噪聲和直流失調(diào)的消除。 其次,基于前面的理論分析,本文設(shè)計(jì)了可用于太赫茲成像系統(tǒng)的讀出電路陣列。整個(gè)讀出電路陣列由五部分構(gòu)成:像元內(nèi)前置放大器,相關(guān)雙采樣保持電路,輸出緩沖級(jí)電路以及用于對(duì)讀出陣列順序?qū)ぶ返男辛幸莆粚ぶ芳拇嫫。像元?nèi)采用開(kāi)環(huán)前置放大器一方面可以為極其微弱的檢波器輸出信號(hào)提供足夠的增益,另一方面還使得信號(hào)免受開(kāi)關(guān)噪聲的影響。相關(guān)雙采樣技術(shù)的應(yīng)用進(jìn)一步提高了讀出電路的噪聲性能,同時(shí)消除了前置放大器直流失調(diào)的影響。為了便于將信號(hào)輸出,進(jìn)行進(jìn)一步的信號(hào)處理,本文還設(shè)計(jì)了單位增益的輸出緩沖級(jí)電路。利用行列移位寄存器,實(shí)現(xiàn)44讀出陣列的串行輸出。 最后,整個(gè)讀出電路陣列在Cadence IC仿真軟件中進(jìn)行了仿真,并且繪制了版圖。仿真結(jié)果表明,前置放大器可以提供75dB的直流增益,單個(gè)讀出電路通道上的等效輸入噪聲為25fV2Hz1/2。整個(gè)讀出電路在1.8V供電下消耗了不到16mA的電流,整個(gè)版圖的面積為433μm354μm的面積。
[Abstract]:Terahertz technology has received great attention since the beginning of technology development, especially the terahertz imaging system has been widely used in the field of medical imaging, airport security and material detection, and has been deeply studied. The development of semiconductor technology makes it possible to realize low cost and portable terahertz imaging system using integrated circuit technology. Therefore, a readout circuit array which can be applied to terahertz FET square law direct detection imaging system is designed by using CMOS integrated circuit technology. The main contents of this paper are as follows: Firstly, the principle of FET square law detection is analyzed, and the design requirements and key points of the readout circuit based on the principle are explained. Then, the noise in the readout circuit is analyzed, and the small signal model and noise model of the MOS transistor in CMOS are modeled. It is further pointed out that the key point of the readout circuit at low frequency is the elimination of f noise and DC misalignment. Secondly, a readout circuit array for terahertz imaging system is designed based on the previous theoretical analysis. The whole readout circuit array is composed of five parts: an internal pixel preamplifier, a correlated double sampling and holding circuit, an output buffer level circuit and a row shift addressing register for sequential addressing of the readout array. Using an open-loop preamplifier in the pixel can provide enough gain for the very weak geophone output signal on the one hand, and protect the signal from switching noise on the other hand. The application of correlation double sampling technology further improves the noise performance of the readout circuit and eliminates the influence of DC misalignment of the preamplifier. In order to output the signal and process the signal further, the output buffer stage circuit with unit gain is designed in this paper. The serial output of 44 readout array is realized by using column shift register. Finally, the whole readout circuit array is simulated in Cadence IC simulation software, and the layout is drawn. The simulation results show that the preamplifier can provide the DC gain of 75dB, and the equivalent input noise on a single readout circuit channel is 25fV2Hz1 / 2. The whole readout circuit consumes less than 16mA current under 1.8 V power supply, and the whole layout area is 433 渭 m 354 渭 m.
【學(xué)位授予單位】:北京理工大學(xué)
【學(xué)位級(jí)別】:碩士
【學(xué)位授予年份】:2015
【分類號(hào)】:TN432
【參考文獻(xiàn)】
相關(guān)期刊論文 前1條
1 Ming Yiu Sy;Yi-Xiang J Wang;Anil T Ahuja;Emma Pickwell-MacPherson;;A promising diagnostic method:Terahertz pulsed imaging and spectroscopy[J];World Journal of Radiology;2011年03期
本文編號(hào):1835347
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