本文選題：集總參數(shù) + 帶通濾波器��； 參考：《南京郵電大學(xué)》2017年碩士論文

【摘要】：目前現(xiàn)代微波技術(shù)的發(fā)展如火如荼,減小濾波器整體體積并且提高傳輸品質(zhì)是研究中的根本訴求。多層結(jié)構(gòu)濾波器可以滿足濾波器件空間緊湊的目標(biāo),由于在搭建物理模型中不可避免的會(huì)引入寄生效應(yīng),這會(huì)直接導(dǎo)致濾波系統(tǒng)性能下降。橢圓函數(shù)帶通濾波器的物理結(jié)構(gòu)中諧振電容電感元件是成對(duì)出現(xiàn)的,這使得它與同類結(jié)構(gòu)相比,性能更加優(yōu)越。另一方面在搭建物理模型時(shí),可以通過(guò)該優(yōu)越的性能調(diào)節(jié)元件值大小達(dá)到減小寄生效應(yīng)使系統(tǒng)S參數(shù)曲線性能更加優(yōu)越的目標(biāo)。本論文的主要研究對(duì)象是橢圓函數(shù)帶通濾波器,研究步驟是設(shè)計(jì)物理電路模型,并分析電路中各個(gè)元件值與S參數(shù)曲線的映射關(guān)系,最后對(duì)符合設(shè)計(jì)指標(biāo)的三維模型結(jié)構(gòu)進(jìn)行加工測(cè)試。論文的主要工作和創(chuàng)新點(diǎn)如下:(1)分析了傳統(tǒng)的多層介質(zhì)結(jié)構(gòu)元件。重點(diǎn)研究了三維結(jié)構(gòu)電容性能的優(yōu)劣處,并且設(shè)計(jì)出了一種改進(jìn)型三維結(jié)構(gòu)電容。利用軟件對(duì)其仿真,發(fā)現(xiàn)改進(jìn)型結(jié)構(gòu)在自諧振頻率變大的同時(shí)品質(zhì)因數(shù)也增高,說(shuō)明在相同用料面積下可以獲得更多等效電容值并且內(nèi)部損耗小。該改進(jìn)型電容結(jié)構(gòu)完全符合多層結(jié)構(gòu)空間利用率高的設(shè)計(jì)要求。(2)以物理電路模型為出發(fā)點(diǎn),采用印制電路板技術(shù)設(shè)計(jì),實(shí)物加工出符合設(shè)計(jì)標(biāo)準(zhǔn)的三維物理結(jié)構(gòu)。結(jié)構(gòu)共有八層并內(nèi)置改進(jìn)型電容,模型系統(tǒng)空間利用率高。此外利用打孔技術(shù)即并聯(lián)電感降低整體結(jié)構(gòu)中的寄生效應(yīng),非常巧妙地解決了仿真結(jié)果右側(cè)陷波不明顯的問(wèn)題。實(shí)物測(cè)量結(jié)果和軟件仿真結(jié)果非常接近,說(shuō)明該設(shè)計(jì)符合最初的指標(biāo)要求并具有良好的性能。(3)利用物理電路系統(tǒng)諧振單元中元件值的變化對(duì)整體濾波器性能影響的結(jié)論設(shè)計(jì)了一款多層低溫共燒陶瓷結(jié)構(gòu)帶通濾波器模型。電路建模討論分析低溫共燒陶瓷結(jié)構(gòu)模型中寄生通帶存在位置和原因并重新規(guī)劃元件擺放位置以消除寄生通帶。最終設(shè)計(jì)出一款九層低溫共燒陶瓷結(jié)構(gòu)物理模型,整體結(jié)構(gòu)體積小,空間利用率高,利用HFSS仿真可以發(fā)現(xiàn)其仿真性能優(yōu)越,基本符合設(shè)計(jì)初衷。
[Abstract]:At present, the development of modern microwave technology is in full swing, reducing the overall size of the filter and improving the transmission quality is the fundamental demand in the research. The multilayer filter can meet the goal of compact filter space. The parasitic effect will inevitably be introduced into the physical model, which will directly lead to the degradation of filter system performance. In the physical structure of the elliptic function bandpass filter, the resonant capacitor inductance element appears in pairs, which makes it superior to the similar structure. On the other hand, when the physical model is built, the superior value of the component can be adjusted to reduce the parasitic effect and make the performance of the S parameter curve more superior. The main research object of this paper is elliptic function band-pass filter. The research step is to design the physical circuit model and analyze the mapping relationship between each component value and S parameter curve in the circuit. Finally, the machining test of three-dimensional model structure according to the design index is carried out. The main work and innovation of this paper are as follows: 1) analyze the traditional multilayer dielectric elements. The merits and demerits of the three-dimensional structure capacitance are studied and an improved three-dimensional structure capacitor is designed. It is found that the improved structure has higher self-resonant frequency and higher quality factor, which indicates that more equivalent capacitance values can be obtained under the same feed area and the internal loss is small. The improved capacitance structure fully meets the design requirements of high space utilization ratio of multilayer structure. (2) based on the physical circuit model, the printed circuit board technology is used to design the 3D physical structure which conforms to the design standard. The structure has eight layers and an improved capacitance, so the model system has a high space utilization rate. In addition the parallel inductor is used to reduce the parasitic effect in the whole structure which solves the problem that the right notch is not obvious in the simulation results. The result of physical measurement is very close to the result of software simulation. It shows that the design meets the initial requirements and has good performance. (3) A multi-layer low temperature co-fired ceramic structure is designed using the conclusion that the change of element value in the resonant unit of the physical circuit system affects the performance of the whole filter. Band-pass filter model. The location and reason of parasitic passband in the low temperature co-fired ceramic structure model are discussed and analyzed, and the location of the elements is rearranged to eliminate the parasitic passband. Finally, a nine-layer low temperature co-fired ceramic structure physical model is designed. The whole structure is small and the space utilization ratio is high. Using HFSS simulation, it can be found that its simulation performance is superior, which basically accords with the original design intention.
【學(xué)位授予單位】：南京郵電大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN713.5

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本文編號(hào)：1831321