本文選題：HgCdTe + RCA��； 參考：《中國(guó)科學(xué)院研究生院(上海技術(shù)物理研究所)》2015年碩士論文

【摘要】：碲鎘汞(Hg1-x Cdx Te)是由Ⅱ-Ⅵ族的碲化汞(Hg Te)和碲化鎘(Cd Te)混合而成的連續(xù)固溶體,其禁帶寬度可隨組分x連續(xù)變化,響應(yīng)波段可覆蓋整個(gè)紅外波段,是最重要的紅外半導(dǎo)體材料之一。在導(dǎo)彈制導(dǎo)、環(huán)境與資源遙感、夜視、衛(wèi)星和民用等領(lǐng)域,Hg Cd Te紅外探測(cè)器發(fā)揮著重要的作用。Hg Cd Te表面性質(zhì)在很大程度上決定了Hg Cd Te紅外探測(cè)器的光電性能,為了進(jìn)一步提高Hg Cd Te紅外探測(cè)器的性能,需要對(duì)Hg Cd Te表面處理工藝進(jìn)行更加深入的研究。Hg Cd Te表面處理的主要工藝是拋光和清洗工藝,這兩個(gè)工藝與Hg Cd Te表面的粗糙度、平整度、損傷和污染物殘留有著直接關(guān)系。因此,本文從Hg Cd Te拋光工藝和清洗工藝著手,對(duì)化學(xué)機(jī)械拋光技術(shù)(CMP-Chemical Mechanical Polishing)、溴拋光技術(shù)(Bromine Polishing)和清洗技術(shù)(Cleaning Technology)進(jìn)行了深入的研究。首先,本文對(duì)各種CMP工藝條件處理的Hg Cd Te表面平整度進(jìn)行了研究。調(diào)整CMP過(guò)程中載物夾具重量、拋光時(shí)間和拋光平臺(tái)轉(zhuǎn)速三個(gè)因素,使用激光干涉儀對(duì)調(diào)整后的Hg Cd Te表面平整度進(jìn)行表征,采用正交實(shí)驗(yàn)分析法對(duì)平整度數(shù)據(jù)進(jìn)行分析,從而獲得了一個(gè)最佳Hg Cd Te平整度的CMP工藝條件。另外,本文對(duì)CMP處理后Hg Cd Te晶片中間呈現(xiàn)“凸”形的原因進(jìn)行了分析,并指出:雖然載物夾具一直在自轉(zhuǎn),由此導(dǎo)致Hg Cd Te晶片中心位置和邊緣位置的瞬時(shí)速度不同,但是在載物夾具本身旋轉(zhuǎn)的一個(gè)周期T內(nèi),Hg Cd Te晶片任何位置在該周期T內(nèi)的平均速度是相同的。根據(jù)CMP拋光速率的機(jī)理,拋光速率MRR正比于速度V。從一個(gè)周期T綜合來(lái)看,因?yàn)槠骄俣仁窍嗤?所以速度的不同并不是造成Hg Cd Te晶片中間“凸”形的原因,而Hg Cd Te晶片邊緣區(qū)域先于中心區(qū)域接觸到新鮮拋光液,由此導(dǎo)致Hg Cd Te晶片邊緣位置的化學(xué)反應(yīng)強(qiáng)于中心位置的化學(xué)反應(yīng),這點(diǎn)可能是Hg Cd Te晶片中間“凸”形的原因。除了CMP技術(shù)被應(yīng)用在Hg Cd Te減薄和表面優(yōu)化外,溴拋光技術(shù)也是一種常用的Hg Cd Te減薄和表面優(yōu)化的加工技術(shù)。相比CMP技術(shù),溴拋光技術(shù)在平整度、厚度控制、拋光速率和工藝區(qū)間適應(yīng)度等方面并沒(méi)有很大的優(yōu)勢(shì),但是溴拋光技術(shù)有一個(gè)重要的優(yōu)點(diǎn),那就是溴拋光帶來(lái)的表面損傷很小。要將溴拋光技術(shù)應(yīng)用于Hg Cd Te表面處理工藝中,必須解決溴拋光過(guò)程中Hg Cd Te表面極易發(fā)黑和出現(xiàn)小麻點(diǎn)的問(wèn)題。通過(guò)調(diào)整Br2-CH3OH溶液濃度、拋光墊含水和載物夾具重量三個(gè)因素,發(fā)現(xiàn)了Hg Cd Te表面發(fā)黑或出現(xiàn)小麻點(diǎn)的原因,并建立了一套穩(wěn)定的溴拋光工藝流程,該溴拋光工藝流程已應(yīng)用于工程任務(wù)Hg Cd Te器件的制作。其次,清洗工藝是去除Hg Cd Te表面有機(jī)物、顆粒和離子等沾污的主要工藝,這些沾污對(duì)Hg Cd Te器件性能有著巨大影響。本文借鑒了硅片的RCA清洗技術(shù)和兆聲清洗技術(shù),將其應(yīng)用于常規(guī)碲鎘汞清洗工藝的改進(jìn),并設(shè)計(jì)了一種新碲鎘汞清洗技術(shù)。最后,本文從X-射線光電子能譜、電荷密度和器件性能三個(gè)角度對(duì)常規(guī)碲鎘汞清洗技術(shù)和新碲鎘汞清洗技術(shù)的清洗效果進(jìn)行了表征和對(duì)比,獲得了四個(gè)結(jié)論,一是常規(guī)碲鎘汞清洗技術(shù)有可能會(huì)引入有機(jī)物污染;二是新碲鎘汞清洗技術(shù)處理的Hg Cd Te表面含有更少的總離子量,并且新清洗Hg Cd Te表面的慢表面態(tài)密度要優(yōu)于常規(guī)清洗的Hg Cd Te表面;三是陽(yáng)極氧化層會(huì)引入大量正電荷;四是新碲鎘汞清洗技術(shù)處理的Hg Cd Te器件性能比常規(guī)清洗技術(shù)處理的Hg Cd Te器件有一定的提高,但還需更多的數(shù)據(jù)進(jìn)行驗(yàn)證。
[Abstract]:Mercury cadmium telluride (Hg1-x Cdx Te) is a continuous solid solution composed of 2 - VI group of mercury telluride (Hg Te) and cadmium telluride (Cd Te). The band gap can be continuously changed with the component X, and the response band can cover the entire infrared band. It is one of the most important infrared semiconductor materials. In missile guidance, environment and resources remote sensing, night vision, satellite and civil collar. Domain, Hg Cd Te infrared detector plays an important role in the.Hg Cd Te surface properties to a great extent determines the photoelectric performance of the Hg Cd Te infrared detector. In order to further improve the performance of Hg Cd Te infrared detector, the main process of surface treatment is to be polished. And cleaning process, these two processes are directly related to the roughness, flatness, damage and residue of the Hg Cd Te surface. Therefore, this paper starts with the Hg Cd Te polishing process and cleaning process, on the chemical mechanical polishing (CMP-Chemical Mechanical Polishing), bromine polishing (Bromine Polishing) and cleaning technology (Cleaning) Ology) carried out a thorough study. First, this paper studies the surface evenness of the Hg Cd Te treated by various CMP process conditions. The weight of the fixture, the polishing time and the speed of the polishing platform in the CMP process are adjusted by three factors, and the laser interferometer is used to characterize the Hg Cd Te surface evenness after the adjustment, and the orthogonal experimental analysis method is adopted. The smoothness data is analyzed and a CMP process condition for the best Hg Cd Te evenness is obtained. In addition, this paper analyzes the cause of the "convex" shape in the middle of the Hg Cd Te wafer after CMP processing, and points out that the instantaneous velocity of the center position and edge position of the Hg Cd Te wafer, although the carrier fixture has been rotated all the time. Different, but the average speed of any position of the Hg Cd Te chip is the same within this period T within a period of T rotation of the carrier fixture itself. According to the mechanism of CMP polishing rate, the polishing rate MRR is proportional to the speed V. from a periodic T, because the average velocity is the same, so the difference of the speed is not the Hg Cd Te. The cause of the "convex" shape in the middle of the wafer, and the Hg Cd Te chip edge area contact with the fresh polishing liquid first in the center area, which leads to the chemical reaction of the edge position of the Hg Cd Te wafer stronger than the central position. This may be the cause of the "convex" shape in the middle of the Hg Cd Te wafer. Besides CMP technology is applied in Hg Cd to reduce and table. Bromine polishing technology is also a common processing technology for Hg Cd Te thinning and surface optimization. Compared to CMP technology, bromine polishing technology has no great advantage in flatness, thickness control, polishing rate and process interval fitness, but bromine polishing technology has an important advantage, that is, the table brought by bromine polishing. In order to apply bromine polishing technology to the Hg Cd Te surface treatment process, it is necessary to solve the problem that the surface of Hg Cd Te is very easy to blacken and appear small pockmarks in the process of bromine polishing. By adjusting the concentration of Br2-CH3OH solution, the water cut of the polishing pad and the weight of the carrier fixture, the reasons for the black or the small pockmarks appear on the Hg Cd Te surface are found. A set of stable bromine polishing process has been established. The bromine polishing process has been applied to the production of Hg Cd Te devices in engineering tasks. Secondly, the cleaning process is the main process to remove the contamination of Hg Cd Te surface organic matter, particles and ions. The contamination has a great influence on the performance of Hg Cd Te devices. This paper draws on the RCA of the silicon wafer. Washing technology and megabyte cleaning technology are applied to the improvement of conventional mercury cadmium telluride cleaning process, and a new mercury cadmium telluride cleaning technology is designed. Finally, the cleaning effect of conventional mercury cadmium telluride cleaning technology and new tellurium mercury cleaning technology is characterized by three angles of X- ray photoelectron spectroscopy, charge density and device performance. Four conclusions are obtained, one is that conventional mercury cadmium telluride cleaning technology may introduce organic contaminants; two the Hg Cd Te surface of the new HgCdTe cleaning technology contains less total ion content, and the slow surface density of the new cleaning Hg Cd Te surface is superior to the conventional cleaning Hg Cd Te surface; three is the anode oxidation layer will introduce a large amount of the surface. Positive charges; four Hg Cd Te devices treated by HgCdTe cleaning technology have a certain improvement in the performance of Hg Cd Te devices treated with conventional cleaning technology, but more data need to be verified.

【學(xué)位授予單位】：中國(guó)科學(xué)院研究生院(上海技術(shù)物理研究所)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN305.2

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