本文選題：薄膜體聲波諧振器(FBAR) + 石墨烯　； 參考：《浙江大學(xué)》2017年碩士論文

【摘要】：近些年來(lái),新興消費(fèi)電子的巨大需求帶動(dòng)了基于半導(dǎo)體微納加工技術(shù)的MEMS產(chǎn)業(yè)的蓬勃發(fā)展,薄膜體聲波諧振器(FBAR)作為MEMS領(lǐng)域增長(zhǎng)飛快的產(chǎn)品正在受到廣泛的關(guān)注與研究。FBAR具有尺寸小(μm級(jí))、諧振頻率高(GHz)、品質(zhì)因數(shù)高(1000)、功率容量大、滾降效應(yīng)好等優(yōu)良特性,其濾波器正在逐步取代傳統(tǒng)的聲表面波(SAW)濾波器和陶瓷濾波器,在無(wú)線通信射頻領(lǐng)域發(fā)揮巨大作用,其高靈敏度的優(yōu)勢(shì)也能應(yīng)用到生物、物理、醫(yī)學(xué)等傳感領(lǐng)域。本文基于FBAR的基本結(jié)構(gòu),優(yōu)化了背刻蝕型FBAR的工藝流程,以石墨烯作為電極制備新型的FBAR,器件具有優(yōu)異的諧振性能,并以PI為基底制備了 FBAR磁性傳感器,還在柔性玻璃上實(shí)現(xiàn)了 FBAR的柔性透明化。主要的研究?jī)?nèi)容和成果如下:1、研究了背刻蝕FBAR的工藝與不同器件結(jié)構(gòu)。在硅基底上制備了高c軸生長(zhǎng)的氧化鋅薄膜,表征其薄膜質(zhì)量,優(yōu)化刻蝕工藝提高了 FBAR背刻蝕器件的成品率。在薄氧化硅的硅片上制備了金為電極的FBAR器件,通過(guò)優(yōu)化電極形狀提升了器件性能,所制備的FBAR器件諧振頻率為1.672GHz,Q值優(yōu)化到1672的超高值。同時(shí)在厚氧化硅硅片上制備了鋁為電極的FBAR器件,與薄氧化層器件相比具有諧振性能較好的兩個(gè)諧振峰。2、制備了基于石墨烯電極的FBAR。進(jìn)行理論仿真分析了石墨烯電極的優(yōu)勢(shì)。在背刻蝕器件的基礎(chǔ)上,將上電極替換為石墨烯,優(yōu)化轉(zhuǎn)移工藝與制備流程,實(shí)現(xiàn)了多層石墨烯及石墨片作為FBAR電極的新型器件結(jié)構(gòu),其中6-8層石墨烯器件諧振頻率1.277GHz,Q值高達(dá)650,優(yōu)于鋁電極器件,石墨片器件諧振頻率1.398GHz,Q值為350,與ITO為電極的器件性能相當(dāng)。3、獲得了 PI型的磁性FBAR傳感器。運(yùn)用COMSOL有限元仿真驗(yàn)證了 PI型FBAR的理論可能性,實(shí)驗(yàn)中用鎳為電極制備了 FBAR磁性傳感器,其在磁場(chǎng)下諧振頻率有7kHz左右的上升,提出了磁致伸縮的傳感機(jī)理并通過(guò)Mason模型進(jìn)行ADS電路仿真加以驗(yàn)證。4、以willow glass為襯底制備了柔性透明FBAR。研究了在柔性玻璃上的FBAR制備工藝,制備的器件在彎曲后仍有諧振性能,諧振頻率為1.77GHz,Q值為443,優(yōu)于PET與紙襯底的柔性FBAR性能,在施加壓力下,諧振頻率會(huì)有1MHz左右的較大偏移。
[Abstract]:In recent years, the huge demand of emerging consumer electronics has led to the vigorous development of the MEMS industry based on semiconductor micro-nano processing technology. Thin film bulk acoustic resonator (FBA), as a rapidly growing product in the field of MEMS, is receiving extensive attention and research. FBAR is characterized by its small size (渭 m level), high resonant frequency, high quality factor, high power capacity, good rolling effect and so on. Its filters are gradually replacing the traditional saw filters and ceramic filters, which play a great role in the radio frequency field of wireless communication. Its high sensitivity advantages can also be applied to the biological, physical, medical and other sensing fields. In this paper, based on the basic structure of FBAR, the process of back etching FBAR is optimized. The novel FBAR is fabricated with graphene as the electrode. The device has excellent resonance performance, and the FBAR magnetic sensor is fabricated on Pi substrate. The flexible transparency of FBAR is also realized on the flexible glass. The main research contents and results are as follows: 1. The technology and structure of FBAR are studied. Zinc oxide thin films with high c-axis growth were prepared on silicon substrates. The quality of ZnO films was characterized and the yield of FBAR back etching devices was improved by optimizing the etching process. Gold electrode FBAR devices were fabricated on silicon wafers with thin silicon oxide. By optimizing the electrode shape, the device performance was improved. The resonant frequency of the fabricated FBAR devices was optimized to a high value of 1672, with a resonant frequency of 1.672 GHz. At the same time, FBAR devices with aluminum as electrode were fabricated on thick silicon oxide wafer. Compared with thin oxide devices, there were two resonance peaks of the devices with better resonance performance. FBA based on graphene electrode was prepared. The advantage of graphene electrode was analyzed by theoretical simulation. On the basis of the back etching device, the upper electrode was replaced with graphene, and the transfer process and preparation process were optimized. The multilayer graphene and graphite sheet were realized as the new device structure of FBAR electrode. The resonant frequency of 6-8 layer graphene device is as high as 650, which is higher than that of aluminum electrode device. The resonant frequency of graphite chip device is 350, which is equivalent to that of ITO. A Pi type magnetic FBAR sensor is obtained. The theoretical possibility of Pi type FBAR is verified by COMSOL finite element simulation. In the experiment, the FBAR magnetic sensor is fabricated with nickel electrode. The resonance frequency of the sensor increases with the increase of 7kHz in the magnetic field. The sensing mechanism of magnetostriction is proposed and verified by ADS circuit simulation with Mason model. The flexible transparent FBA is fabricated on willow glass substrate. The fabrication process of FBAR on flexible glass is studied. The resonant frequency is 1.77 GHz / Q = 443, which is superior to the flexible FBAR performance of PET and paper substrate. Under the applied pressure, the resonant frequency of the device has a large deviation of 1MHz or so.
【學(xué)位授予單位】：浙江大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN751.2

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本文編號(hào)：1827278