發(fā)布時(shí)間：2018-04-30 17:59

  本文選題：帶隙基準(zhǔn)源 + 寬溫度范圍��； 參考：《微電子學(xué)》2016年06期

【摘要】：在傳統(tǒng)帶隙基準(zhǔn)源的基礎(chǔ)上,設(shè)計(jì)了一種在極寬溫度范圍內(nèi)具有高溫度穩(wěn)定性的CMOS帶隙基準(zhǔn)電路。該電路將三極管的集電極置于負(fù)反饋環(huán)路中,以避免三極管基極分流對(duì)集電極電位的影響,實(shí)現(xiàn)溫度補(bǔ)償。通過采用低電源抑制比(PSRR)的差分運(yùn)放,可以得到不受電源電壓影響的基準(zhǔn)電壓。基于0.5μm CMOS標(biāo)準(zhǔn)工藝實(shí)現(xiàn),采用Spectre進(jìn)行仿真,結(jié)果表明:該帶隙基準(zhǔn)源在室溫下產(chǎn)生的基準(zhǔn)電壓為(1.256 9±0.000 32)V,在-35℃~125℃溫度范圍內(nèi)的溫漂系數(shù)為1.39×10~(-6)/℃;當(dāng)工作電壓為1.8~4.6V時(shí),輸出電壓僅變化0.31mV/V;3V供電下的功耗為14.69μW;滿足胎壓監(jiān)測(cè)芯片的設(shè)計(jì)要求。
[Abstract]:Based on the traditional bandgap reference source, a CMOS bandgap reference circuit with high temperature stability in a wide temperature range is designed. In this circuit, the collector of the transistor is placed in a negative feedback loop to avoid the effect of the base shunt of the transistor on the collector potential and to realize temperature compensation. By using differential operational amplifier with low power supply rejection ratio (PSRR), a reference voltage independent of the power supply voltage can be obtained. Based on the standard process of 0.5 渭 m CMOS and Spectre simulation, the results show that the reference voltage of the bandgap reference source is 1.2559 鹵0.000 32V at room temperature, and the temperature drift coefficient is 1.39 脳 10 ~ (-1) ~ (-6) / 鈩，

本文編號(hào)：1825591