本文選題：少子壽命 + 低溫多晶硅　； 參考：《蘇州大學(xué)》2015年碩士論文

【摘要】：隨著科技的進(jìn)步和人類對(duì)視覺(jué)享受追求的持續(xù)提升,AMOLED顯示技術(shù)以其快速響應(yīng)、高頻率、低能耗、高PPI、超高色彩飽和度及超高對(duì)比度等優(yōu)點(diǎn)將成為下階段顯示技術(shù)行業(yè)中的一顆璀璨的明星。本研究是利用激光波導(dǎo)測(cè)試的方法,研究AMOLED顯示用背板的低溫多晶硅載流子少子壽命同TFT特性、多晶硅晶粒大小、準(zhǔn)分子激光結(jié)晶工藝條件和AMOLED顯示器件之間的關(guān)系,從而開辟一條成本低、環(huán)境友好的快速反饋生產(chǎn)問(wèn)題的新技術(shù)路線。(1)利用統(tǒng)計(jì)學(xué)計(jì)算方法對(duì)低溫多晶硅載流子少子壽命測(cè)量體系進(jìn)行計(jì)算分析。從理論上闡述低溫多晶硅少子壽命測(cè)試的可行性和對(duì)比其他表征方法時(shí)所存在的問(wèn)題及其解決方法。(2)根據(jù)理論計(jì)算分析結(jié)果,制定了相應(yīng)的實(shí)驗(yàn)方案。采用準(zhǔn)分子激光結(jié)晶的方法在不同工藝條件下生長(zhǎng)低溫多晶硅薄膜,對(duì)薄膜的子少子壽命、薄膜內(nèi)多晶硅晶粒、薄膜制作的TFT半導(dǎo)體器件的載流子遷移率、閾值電壓、亞閾值擺幅等進(jìn)行規(guī)律性研究。研究了不同工藝條件下少子壽命對(duì)各半導(dǎo)體參數(shù)的影響。通過(guò)原子力顯微鏡(AFM)、掃描電子顯微鏡(SEM)、半導(dǎo)體測(cè)試儀等分析方法對(duì)樣品的物相、微觀形貌、晶粒大小和分布進(jìn)行表征。(3)研究結(jié)果表明:通過(guò)對(duì)低溫多晶硅少子壽命的研究,其可以有效表征低溫多晶硅TFT特性和AMOLED顯示器件的均一性,進(jìn)而指導(dǎo)準(zhǔn)分子激光結(jié)晶工藝的效果和控制范圍。同時(shí)探討了不同工藝條件下晶粒大小、AFM結(jié)果的影響,總結(jié)出了激光能量在460-500mJ/cm2附近時(shí)結(jié)晶化的優(yōu)化工藝條件,此時(shí)的微波反射信號(hào)穩(wěn)定在500mV左右,波動(dòng)最小。最終為工業(yè)化全自動(dòng)大規(guī)模生產(chǎn)的反饋糾正體系研究工作提供實(shí)驗(yàn)數(shù)據(jù)和理論依據(jù)。
[Abstract]:With the development of science and technology and the continuous improvement of human's pursuit of visual enjoyment, AMOLED display technology with its rapid response, high frequency, low energy consumption, High PPI, ultra high color saturation and high contrast will become a bright star in the next stage of display technology industry. The relationship between minority carrier lifetime of low temperature polysilicon carrier and TFT, grain size of polysilicon, excimer laser crystallization conditions and AMOLED display device is studied by using the method of laser waveguide measurement. Therefore, a new technology route of low cost and environmental friendly fast feedback production problem is opened up. Statistical calculation method is used to calculate and analyze the low temperature polysilicon carrier minority carrier lifetime measurement system. The feasibility of low temperature polysilicon minority carrier lifetime test and the problems existing in comparison with other characterization methods and their solutions are described theoretically. (2) based on the theoretical calculation and analysis results, the corresponding experimental scheme is worked out. Low temperature polysilicon thin films were grown by excimer laser crystallization under different conditions. The carrier mobility, threshold voltage and carrier mobility of TFT semiconductor devices fabricated by the thin films were investigated, including the carrier minority carrier lifetime of the films, the polycrystalline silicon grains in the films, the carrier mobility and the threshold voltage of the TFT semiconductor devices fabricated by the films. The regularity of subthreshold amplitude swing was studied. The influence of minority carrier lifetime on the parameters of semiconductors under different technological conditions was studied. The phase, micromorphology, grain size and distribution of the samples were characterized by AFM, SEM and Semiconductor Tester. The results showed that the minority carrier lifetime of low temperature polysilicon was studied by means of atomic force microscope (AFM), scanning electron microscopy (SEM) and semiconductor tester. It can effectively characterize the TFT characteristics of low temperature polysilicon and the homogeneity of AMOLED display devices, and then guide the effect and control range of excimer laser crystallization process. At the same time, the influence of grain size on the results of 460-500mJ/cm2 was discussed, and the optimized process conditions of laser energy crystallization near 460-500mJ/cm2 were summarized. The microwave reflected signal was stable at 500mV and the fluctuation was the least. Finally, it provides experimental data and theoretical basis for the research of feedback correction system of industrial automatic mass production.
【學(xué)位授予單位】：蘇州大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN304.12

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