本文選題：磁控濺射 + h-BN　； 參考：《武漢科技大學(xué)》2015年碩士論文

【摘要】：h-BN具有類似石墨的層狀結(jié)構(gòu)，獨(dú)特的結(jié)構(gòu)使h-BN具有禁帶寬、導(dǎo)熱率高、熔點(diǎn)高、介電常數(shù)低、抗熱沖擊性優(yōu)良、電絕緣性好等獨(dú)特的物理化學(xué)性質(zhì)，其性能較石墨更為優(yōu)良，具有極高的應(yīng)用潛力。本文主要研究磁控濺射工藝及退火溫度對(duì)h-BN薄膜的影響。 本論文采用射頻磁控濺射法在n型Si (100)襯底上制備BN薄膜，對(duì)BN薄膜進(jìn)行AFM、SEM、FTIR、Raman及XPS分析，研究了氮?dú)饬髁�、�?fù)偏壓、氫氣流量以及退火溫度對(duì)BN薄膜形貌與結(jié)構(gòu)的影響。結(jié)果表明： (1)適量的氮?dú)饬髁拷档土薆N薄膜的表面粗糙度，提高了薄膜的結(jié)晶度；高的負(fù)偏壓改變了BN薄膜的層狀生長(zhǎng)模式及晶粒取向，誘導(dǎo)了h-BN向c-BN的轉(zhuǎn)變，不利于高質(zhì)量層狀h-BN薄膜的制備；適量的氫氣流量平衡了h-BN中的缺陷，抑制了h-BN向c-BN的轉(zhuǎn)變，提高了h-BN薄膜穩(wěn)定性，利于高質(zhì)量層狀h-BN薄膜的制備。 (2)氮?dú)饬髁�、�?fù)偏壓以及氫氣流量顯著影響B(tài)N薄膜的形貌與結(jié)構(gòu)。在Si襯底上制備高質(zhì)量層狀h-BN薄膜較為優(yōu)化的濺射工藝條件為：氮?dú)饬髁繛?2sccm，負(fù)偏壓為0V，氫氣流量為12sccm。 (3)采取退火方式對(duì)h-BN薄膜進(jìn)行N的補(bǔ)充及H的摻雜。但退火促進(jìn)h-BN經(jīng)E-BN和w-BN向c-BN轉(zhuǎn)變，，當(dāng)退火溫度為900℃時(shí)，h-BN向c-BN的轉(zhuǎn)變最明顯，不利于高質(zhì)量層狀h-BN薄膜的制備。
[Abstract]:H-BN has the unique physical and chemical properties of graphite-like layered structure, such as wide band gap, high thermal conductivity, high melting point, low dielectric constant, excellent thermal impact resistance, good electrical insulation and other unique physical and chemical properties, and its performance is better than that of graphite. Has extremely high application potential. The effects of magnetron sputtering technology and annealing temperature on h-BN thin films are studied in this paper. In this paper, BN thin films were deposited on n-type Si (100) substrates by RF magnetron sputtering. The effects of nitrogen flow rate, negative bias voltage, hydrogen flow rate and annealing temperature on the morphology and structure of BN thin films were investigated by means of XPS and XPS analysis. The results show that: The surface roughness and crystallinity of BN thin films were decreased by proper nitrogen flow rate, and the layer growth pattern and grain orientation of BN thin films were changed by high negative bias voltage, which induced the transition of h-BN to c-BN. It is unfavorable to the preparation of high quality layered h-BN films, and the proper hydrogen flow rate can balance the defects in h-BN, inhibit the transition from h-BN to c-BN, improve the stability of h-BN films and facilitate the preparation of high quality layered h-BN films. (2) nitrogen flow, negative bias voltage and hydrogen flow rate significantly affect the morphology and structure of BN films. The optimum sputtering conditions for high quality layered h-BN thin films on Si substrate are as follows: nitrogen flow rate is 12sccm, negative bias voltage is 0V, hydrogen flow rate is 12sccm. The annealing method is used to supplement the h-BN films with N and doped with H. However, annealing promotes the transition of h-BN from E-BN and w-BN to c-BN, and the transition from h-BN to c-BN is the most obvious at 900 鈩

本文編號(hào)：1818716