本文選題：毫米波單片集成電路 + 功率放大器　； 參考：《杭州電子科技大學(xué)》2015年碩士論文

【摘要】：在近幾十年,無(wú)線通信技術(shù)隨著電子技術(shù)的發(fā)展而得以迅速發(fā)展,但隨之出現(xiàn)了在低頻頻段開(kāi)始出現(xiàn)了頻譜資源日益緊張。同時(shí)隨著多媒體技術(shù)的發(fā)展,人們對(duì)無(wú)線通信系統(tǒng)的要求越來(lái)越高。不過(guò),幸運(yùn)的是毫米波頻段的頻譜資源豐富而且能夠?qū)崿F(xiàn)高速率傳輸,毫米波技術(shù)給無(wú)線通信研究提供了廣闊的頻譜資源空間,同時(shí)給無(wú)線通信帶來(lái)了新的活力和更多的選擇。其中60GHz技術(shù)以其頻帶寬、抗干擾力強(qiáng)、傳輸安全性高,超高速的數(shù)據(jù)傳輸能力等眾多優(yōu)點(diǎn),成為下一代無(wú)線通信系統(tǒng)的發(fā)展方向,是學(xué)術(shù)界和工業(yè)界的研究熱點(diǎn)。而當(dāng)通信頻率高于100GHz時(shí),可提供高達(dá)10Gb/s的無(wú)線傳輸速率和更為緊湊的系統(tǒng)結(jié)構(gòu),易于多功能集成實(shí)現(xiàn)應(yīng)用。當(dāng)前,歐美、日本以及中國(guó)臺(tái)灣的各大高校、研究機(jī)構(gòu)以及各大消費(fèi)電子產(chǎn)品公司紛紛開(kāi)展60GHz以及高于100GHz頻率技術(shù)的研究,取得了顯著的成果。近年,國(guó)內(nèi)外關(guān)于60GHz以及高于100GHz頻率的硅基功率放大器的文獻(xiàn)數(shù)量有了顯著增長(zhǎng),電路性能也大幅提高。本文總結(jié)了60GHz和高于100GHz頻率的硅基功率放大器的研究進(jìn)展,探討硅基毫米波功率放大器的挑戰(zhàn)和設(shè)計(jì)方法,并對(duì)60GHz CMOS以及150GHz SiGe BiCMOS功率放大電路進(jìn)行研究與設(shè)計(jì)。其內(nèi)容簡(jiǎn)述如下:(1)本文調(diào)研了60GHz以及高于100GHz頻率的硅基功率放大器的相關(guān)文獻(xiàn),歸納出電路的典型結(jié)構(gòu)及技術(shù)指標(biāo)。截止至2013年,IEEE報(bào)道的60GHz CMOS功率放大器的飽和輸出功率從8dBm提高到超過(guò)20dBm,增益從5.2dB提高到近30dB,PAE從7%提高到了25%以上。而高于100GHz頻率硅基的功率放大器的典型指標(biāo):飽和輸出功率基本都在15dBm以內(nèi),增益大于10-25dB,PAE一般小于10%。截止到2013年,高于100GHz功率放大器的最優(yōu)的指標(biāo)能夠達(dá)到:最高工作頻率為260GHz,最高飽和輸出功率為13.2dBm,最高增益為24.3dB,最高PAE為14.6%。(2)本文較為詳細(xì)地討論了功率放大器的基礎(chǔ)理論,同時(shí)深入的調(diào)研針對(duì)硅基工藝下毫米波功率放大器設(shè)計(jì)的挑戰(zhàn)以及深入的調(diào)研并詳細(xì)探討毫米波電路設(shè)計(jì)的方法。隨著硅基工藝的不斷進(jìn)步,目前硅基工藝的有源器件截止頻率fT已經(jīng)能夠達(dá)到300GHz,這使得硅基毫米波集成功率放大器的設(shè)計(jì)成為可能。但硅基工藝毫米波功率放大器的設(shè)計(jì)仍然存在諸多挑戰(zhàn)。有源器件擊穿電壓低限制了毫米波功率放大器的輸出功率硅基工藝高損耗加大了傳輸線的損耗,此外器件模型精確度不高也成為毫米波功率放大器的設(shè)計(jì)的一個(gè)巨大的挑戰(zhàn)。針對(duì)這些不利因素,本文列舉了目前多種能夠一定程度上解決這些挑戰(zhàn)的方法,例如:功率合成、逼近截止頻率等設(shè)計(jì)方法。(3)本文設(shè)計(jì)了一款基于TSMC 90nm CMOS工藝的60GHz功率放大器。在此功率放大器的設(shè)計(jì)中,針對(duì)毫米波頻段晶體管增益不夠的情況,采用共源共柵結(jié)構(gòu)和在第一級(jí)共源器件柵漏之間并聯(lián)電感諧振掉MOS管寄生電容Cgd的方法來(lái)提高增益,并完成了流片加工和測(cè)試;針對(duì)測(cè)試性能不理想的情況進(jìn)行了分析,找出了與仿真結(jié)果之間差異的原因所在,從而得出了一定的設(shè)計(jì)方法。(4)此外本文采用上文歸納總結(jié)的設(shè)計(jì)方法,還設(shè)計(jì)了一款基于IHP 0.13μm SiGe BiCOMS工藝的150GHz功率放大器。在150GHz的功率放大器的設(shè)計(jì)中,采取了差分結(jié)構(gòu)和變壓器功率合成的方法來(lái)提高放大器的輸出功率。同時(shí),電路采用共發(fā)射極結(jié)構(gòu),通過(guò)巴倫實(shí)現(xiàn)單轉(zhuǎn)雙輸入以及雙轉(zhuǎn)單輸出,實(shí)現(xiàn)功率分配、功率合成、阻抗匹配以及中間抽頭實(shí)現(xiàn)偏置輸入。在電路核心部分實(shí)現(xiàn)軸對(duì)稱,這樣較好的抑制共模信號(hào)。最后完成了電路、版圖的設(shè)計(jì)以及優(yōu)化,芯片面積為0.19mm2。本文較為全面地調(diào)研了60GHz和高于100GHz頻率的硅基功率放大器的研究進(jìn)展,詳細(xì)地總結(jié)毫米波的特點(diǎn)、應(yīng)用以及毫米波硅基電路的研究現(xiàn)狀,探討在毫米波頻段設(shè)計(jì)功率放大器所面臨的挑戰(zhàn)和解決方法;在此基礎(chǔ)上,設(shè)計(jì)了一款60GHz CMOS功率放大電路以及150GHz SiGe BiCOMS功率放大器,這為硅基工藝實(shí)現(xiàn)毫米波電路,特別是毫米波功率放大器奠定一定的基礎(chǔ)。
[Abstract]:In recent decades, wireless communication technology has developed rapidly with the development of electronic technology. However, the frequency spectrum resources are becoming increasingly tense at the beginning of the low frequency band. With the development of multimedia technology, the demand for wireless communication system is getting higher and higher. Fortunately, the spectrum resources of the millimeter wave band are rich. And it can achieve high rate transmission. Millimeter wave technology provides a broad spectrum resource space for wireless communication research, and brings new vitality and more choices to wireless communication. 60GHz technology has become the next generation with its many advantages, such as its frequency bandwidth, strong anti-interference force, high transmission security, ultra high speed data transmission ability and so on. The development direction of the wireless communication system is a hot topic in the academic and industrial circles. When the communication frequency is higher than 100GHz, the wireless transmission rate of up to 10Gb/s and a more compact system structure are provided, and it is easy to realize the application of multi-function integration. Electronic products companies have carried out 60GHz and higher than 100GHz frequency technology research, and achieved remarkable results. In recent years, there has been a significant increase in the number of literatures about 60GHz and the frequency of the silicon based power amplifier higher than the 100GHz frequency at home and abroad, and the performance of the circuit has been greatly improved. This paper sums up the silicon based power amplification of the 60GHz and higher 100GHz frequencies. The research progress of the device, the challenge and design method of the silicon based millimeter wave power amplifier, and the research and design of 60GHz CMOS and 150GHz SiGe BiCMOS power amplifier. The contents are as follows: (1) this paper investigated the related literature of 60GHz and the silicon based power amplifier higher than the 100GHz frequency, and summed up the typical structure of the circuit. As of 2013, the saturated output power of the 60GHz CMOS power amplifier reported by IEEE increased from 8dBm to over 20dBm, the gain increased from 5.2dB to near 30dB, and PAE increased from 7% to more than 25%. The typical index of the power amplifier higher than the 100GHz frequency silicon based power amplifier is that the saturation and output power are basically within 15dBm, and the gain is greater than 10-. 25dB, PAE is generally less than 10%. until 2013. The best index of the 100GHz power amplifier can be achieved: the highest working frequency is 260GHz, the highest saturation output power is 13.2dBm, the highest gain is 24.3dB, the highest PAE is 14.6%. (2). This paper discusses the basic theory of the power amplifier in detail, and investigates the silicon base in depth. The challenge of the design of the millimeter wave power amplifier and the in-depth investigation and detailed discussion of the design method of the millimeter wave circuit. With the continuous progress of the silicon based process, the active device cut-off frequency fT of the silicon based process has been able to reach 300GHz, which makes the design of the silicon based millimeter wave integrated power amplifier possible. There are still many challenges in the design of the process millimeter wave power amplifier. The low breakdown voltage of the active device restricts the output power of the millimeter wave power amplifier. The high loss of the silicon base process increases the loss of the transmission line. In addition, the precision of the device model is also a huge challenge for the design of the millimeter wave power amplifier. Some disadvantages are listed in this paper, such as power synthesis, approximation cut-off frequency and so on. (3) a 60GHz power amplifier based on the TSMC 90nm CMOS process is designed. In the design of this power amplifier, the gain of the millimeter wave band transistors is not enough. In the case, a common source common gate structure and a parallel inductor that resonate the parasitic capacitance Cgd of the MOS tube between the gate leakage of the first common source device are used to improve the gain, and the flow sheet processing and testing are completed. The reasons for the difference between the simulation results and the simulation results are found out. (4) (4) in addition to the design method summarized above, a 150GHz power amplifier based on the 0.13 m SiGe BiCOMS process is designed. In the design of the power amplifier of the 150GHz, the difference structure and the transformer power synthesis method are adopted to raise the output power of the high amplifier. The emitter structure can realize the power allocation, the power synthesis, the impedance matching and the intermediate tap to realize the bias input through the Baren realization of the single turn double input and double rotation single output. The axis symmetry is realized in the core part of the circuit so that the common mode signal is suppressed well. Finally, the circuit, layout and optimization are completed. The area of the chip is 0.19mm2.. The research progress of the silicon based power amplifier of 60GHz and higher than 100GHz frequency is thoroughly investigated. The characteristics of the millimeter wave and the research status of the millimeter wave silicon based circuit are summarized in detail. The challenge and solution method for the design of the power amplifier in the millimeter wave band are discussed. On this basis, a 60GHz CMOS power is designed. Amplifying circuit and 150GHz SiGe BiCOMS power amplifier, this lays a foundation for the millimeter wave circuit, especially millimeter wave power amplifier, in silicon-based process.

【學(xué)位授予單位】：杭州電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TN722.75

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本文編號(hào)：1808766