本文選題：回旋器件 + 固態(tài)功率放大器��； 參考：《電子科技大學》2017年碩士論文

【摘要】：隨著現(xiàn)代電子技術(shù)的發(fā)展,通訊、電子對抗和毫米波雷達對系統(tǒng)高功率、小型化的需求越來越高。而毫米波固態(tài)功率放大器由于其直流電壓低、體積小、重量輕、制作方便、性能穩(wěn)定、合成效率高的優(yōu)點成為最有發(fā)展?jié)摿蛻?yīng)用前景的毫米波發(fā)射機功率源。同時,將固態(tài)功率放大器作為回旋器件的前級穩(wěn)定功率源,能夠綜合固態(tài)器件和回旋器件的優(yōu)點,更好地滿足大功率毫米波發(fā)射機功率源的要求。本文分析介紹了毫米波固態(tài)功率放大器的分類、性能指標、功率合成技術(shù)以及功率合成失效的主要原因。并從功率合成理論,芯片選型,波導微帶過渡結(jié)構(gòu)設(shè)計,功率分配/合成器設(shè)計、功率放大器有源設(shè)計、功率放大器的調(diào)試與測試等方面進行研究。在理論和實踐結(jié)合的基礎(chǔ)上,設(shè)計Ka頻段高隔離度緊湊型寬帶固態(tài)功率放大器,為后續(xù)的大功率高性能固態(tài)功率放大器的研發(fā)積累設(shè)計經(jīng)驗。本文主要研究內(nèi)容有:首先,設(shè)計完成具有寬帶寬、低插損特性的波導微帶過渡結(jié)構(gòu)以及具有寬帶寬、高隔離度、幅相一致性好的兩路功分器,并基于E面魔T功分器單元設(shè)計結(jié)構(gòu)緊湊的八路/十六路功率合成網(wǎng)絡(luò),為之后的27～33.5GHz頻段7W功率放大器以及32～38GHz頻段20W功率放大器的設(shè)計提供無源設(shè)計方案。然后,基于波導微帶探針過渡結(jié)構(gòu)完成27～33.5GHz頻段驅(qū)動級功放設(shè)計。同時基于波導微帶雙探針過渡和E面魔T功分器結(jié)構(gòu)完成27～33.5GHz頻段7W固態(tài)功率放大器設(shè)計。經(jīng)過測試,該功放在27～38GHz頻段內(nèi)S11均小于-10dB,在32～36.5GHz頻段小于-20dB。整體無源結(jié)構(gòu)S21為1.2dB。另外,在27～33.5GHz頻段內(nèi),最小的飽和輸出功率為33dBm,最大為39dBm。在27～30.5GHz和31.5～32.5GHz頻段內(nèi),輸出功率均大于37dBm,達到較好效果。最后,基于E面T型功分器、T型結(jié)功分器、H面波導彎頭和波導微帶H面探針過渡結(jié)構(gòu)完成32～38GHz頻段20W固態(tài)功率放大器設(shè)計。相比較傳統(tǒng)的功分結(jié)構(gòu)和芯片位于同一層的功放設(shè)計,該功放所有的芯片都安裝在下腔體上,而功率分配/合成網(wǎng)絡(luò)結(jié)構(gòu)單獨加工,避免了對芯片安裝的影響,解決了緊湊型多路合成時芯片偏置電路難以安裝的難題。經(jīng)過測試,該功放在30～40GHz頻段內(nèi)輸入S11均小于-10dB。另外,在31.3～40GHz頻段內(nèi)的飽和輸出功率均大于43dBm,在30～31.3GHz頻段內(nèi)的飽和輸出功率介于41～43dBm,在36.4GHz頻率點達到最大飽和輸出功率44.29dBm,達到很好效果。
[Abstract]:With the development of modern electronic technology, the demand of communication, electronic countermeasure and millimeter wave radar for high power and miniaturization is increasing. Because of its advantages of low DC voltage, small volume, light weight, convenient fabrication, stable performance and high synthesis efficiency, millimeter-wave solid-state power amplifier has become the most promising power source for millimeter-wave transmitters. At the same time, using the solid-state power amplifier as the leading stable power source of the gyrotron can integrate the advantages of the solid-state device and the gyrotron device, and better meet the requirements of the high-power millimeter-wave transmitter power source. In this paper, the classification, performance index, power combination technology and main reasons of failure of millimeter wave solid-state power amplifier are analyzed and introduced. The power synthesis theory, chip selection, waveguide microstrip transition structure design, power distribution / synthesizer design, active power amplifier design, debugging and testing of power amplifier are studied. Based on the combination of theory and practice, the design of Ka-band high-isolation compact wideband solid-state power amplifier is carried out, which accumulates the design experience for the research and development of high-power and high-performance solid-state power amplifier. The main contents of this thesis are as follows: firstly, a waveguide microstrip transition structure with wide bandwidth and low insertion loss and a two-way power divider with wide bandwidth, high isolation and good amplitude and phase consistency are designed. Based on the E plane magic T power divider unit, a compact 8-way / 16-way power synthesizer is designed, which provides a passive design scheme for the 7W power amplifier in the 27~33.5GHz band and the 20W power amplifier in the 32~38GHz band. Then, based on the waveguide microstrip probe transition structure, the 27~33.5GHz band driving stage power amplifier design is completed. At the same time, based on the waveguide microstrip double probe transition and the E plane magic T power divider structure, the design of 7 W solid state power amplifier in 27~33.5GHz band is completed. The test results show that the power amplifier is less than -10 dB in 27~38GHz band and -20 dB in 32~36.5GHz band. The whole passive structure S21 is 1.2 dB. In addition, in the 27~33.5GHz band, the minimum saturation output power is 33dBmand the maximum output power is 39dBm. In the 27~30.5GHz and 31.5~32.5GHz bands, the output power is more than 37 dBm, which achieves good results. Finally, the design of 20W solid-state power amplifier in 32~38GHz band is completed based on the transition structure of H-plane waveguide elbow and waveguide microstrip H-plane probe based on E-plane T-type power divider and T-junction power divider. Compared with the traditional power amplifier design which is located in the same layer of the chip, all the chips are installed on the lower cavity, and the power distribution / synthesis network structure is processed separately to avoid the influence on the chip installation. It solves the problem that the chip bias circuit is difficult to install when compact multiplexing. After testing, the input of S11 in 30~40GHz band is less than -10 dB. In addition, the saturation output power in the 31.3~40GHz band is greater than 43dBm, the saturation output power in the 30~31.3GHz band is between 41dBm and 43dBm, and the maximum saturation output power is 44.29dBmat the 36.4GHz frequency.
【學位授予單位】：電子科技大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN722.75

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相關(guān)期刊論文 前2條

1 朱海帆;黨章;李凱;劉祚麟;;Ka頻段200W線性固態(tài)功放設(shè)計[J];微波學報;2012年03期

2 褚慶昕;康智勇;龔志;;Ka波段波導二進制空間功率合成放大器[J];微波學報;2012年01期

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本文編號：1795052