本文選題：刻蝕仿真 + 線算法　； 參考：《清華大學(xué)》2015年碩士論文

【摘要】：集成電路技術(shù)的快速發(fā)展對(duì)生產(chǎn)工藝提出了越來越高的要求。而刻蝕作為集成電路生產(chǎn)過程中的一個(gè)重要環(huán)節(jié),其工藝參數(shù)對(duì)刻蝕結(jié)果有著很大的影響。通過刻蝕試驗(yàn)獲得工藝參數(shù)的方法,效率低,成本高。而通過仿真研究刻蝕演化過程,分析不同工藝參數(shù)對(duì)刻蝕結(jié)果的影響,可以節(jié)省大量的人力、物力和財(cái)力。針對(duì)等離子刻蝕過程,本文研究了幾種不同的算法,分別設(shè)計(jì)實(shí)現(xiàn)了二維和三維刻蝕演化仿真工具,并通過與實(shí)驗(yàn)結(jié)果比較驗(yàn)證了方法的有效性。此外,由于仿真過程中的相關(guān)參數(shù)求取困難,通過引入實(shí)驗(yàn)數(shù)據(jù),對(duì)比實(shí)驗(yàn)與仿真之間的差異,利用優(yōu)化方法對(duì)這些參數(shù)進(jìn)行優(yōu)化,使得仿真結(jié)果更加準(zhǔn)確。本文主要完成了如下的研究工作:1)提出一種新的基于線算法和分子動(dòng)力學(xué)相結(jié)合的二維刻蝕演化方法,實(shí)現(xiàn)了跨尺度的刻蝕演化仿真。應(yīng)用分子動(dòng)力學(xué)方法計(jì)算到達(dá)模型表面的粒子的實(shí)際刻蝕效果,并將其折算成局部刻蝕率返回給線算法,從而更新下一步的剖面形貌。該方法簡(jiǎn)化了相關(guān)參數(shù),擴(kuò)大了仿真方法的適用范圍,實(shí)現(xiàn)了對(duì)刻蝕過程的二維表面演化仿真。2)改進(jìn)了一種基于元胞自動(dòng)機(jī)的三維刻蝕演化仿真方法。通過對(duì)模型壓縮表示優(yōu)化模型,使得演化過程中空間需求降低;同時(shí)利用刻蝕產(chǎn)額等效粒子對(duì)基底材料表面的刻蝕效果,降低了仿真實(shí)施的難度。通過研究不同實(shí)驗(yàn)條件對(duì)刻蝕結(jié)果的影響,驗(yàn)證了算法在進(jìn)行三維刻蝕演化中的有效性。3)提出了依據(jù)實(shí)驗(yàn)數(shù)據(jù)來優(yōu)化刻蝕產(chǎn)額參數(shù)的方法。通過實(shí)際的刻蝕剖面和模擬剖面之間的對(duì)比,設(shè)定適應(yīng)度函數(shù)將刻蝕產(chǎn)額參數(shù)求解問題轉(zhuǎn)化為最優(yōu)化問題。應(yīng)用序優(yōu)化方法和禁忌搜索算法相結(jié)合來解決這個(gè)優(yōu)化問題,通過優(yōu)化參數(shù)獲得更加準(zhǔn)確的仿真結(jié)果。
[Abstract]:The rapid development of integrated circuit technology puts forward higher and higher requirements for production process. As an important part of IC production, etching parameters have great influence on etching results. The method of obtaining process parameters by etching test has the advantages of low efficiency and high cost. By studying the process of etching evolution and analyzing the influence of different process parameters on etching results, a lot of manpower, material and financial resources can be saved. Aiming at the plasma etching process, this paper studies several different algorithms, designs and implements two-dimensional and three-dimensional etching evolution simulation tools, and verifies the effectiveness of the method by comparing with the experimental results. In addition, because of the difficulty of obtaining the relevant parameters in the simulation process, by introducing the experimental data and comparing the differences between the experiment and the simulation, the optimization method is used to optimize these parameters, which makes the simulation results more accurate. In this paper, the following research work is completed: 1) A new two-dimensional etching evolution method based on the combination of linear algorithm and molecular dynamics is proposed, and the cross-scale etching evolution simulation is realized. The molecular dynamics method is used to calculate the actual etching effect of particles reaching the surface of the model, and the local etching rate is converted into a feed line algorithm to update the profile of the next step. This method simplifies the relevant parameters and expands the scope of application of the simulation method. The two-dimensional surface evolution simulation of etching process is realized. 2) an improved three-dimensional etching evolution simulation method based on cellular automata is proposed. Through the compression of the model and the optimization of the model, the space demand in the evolution process is reduced, and the etching effect of the equivalent particle of etching yield on the substrate surface is reduced, which reduces the difficulty of simulation. By studying the effect of different experimental conditions on the etching results, the validity of the algorithm in the evolution of three-dimensional etching is verified. The method of optimizing the etching yield parameters based on the experimental data is proposed. Through the comparison between the actual etching section and the simulated section, the fitness function is set up to transform the solution of etching yield parameters into an optimization problem. Order optimization method and Tabu search algorithm are used to solve the optimization problem, and more accurate simulation results are obtained by optimizing the parameters.
【學(xué)位授予單位】：清華大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN405

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