本文選題：晶體 + 離子束刻蝕��； 參考：《西安工業(yè)大學(xué)》2016年碩士論文

【摘要】：隨著科學(xué)技術(shù)的發(fā)展,空間光學(xué)元件、高功率激光器、X射線光學(xué)系統(tǒng)得到越來越多的應(yīng)用,同時(shí)集成電路也向著大規(guī)模以及超大規(guī)模發(fā)展,這就對光學(xué)以及光電元件表面質(zhì)量提出了較高的要求。離子束刻蝕拋光作為一種非接觸拋光技術(shù),有著諸多的優(yōu)點(diǎn),因此在獲取光學(xué)以及光電元件高質(zhì)量表面時(shí)得到了廣泛的應(yīng)用。本文的研究內(nèi)容主要分為兩部分：離子束刻蝕拋光和KDP的離子束沉積修正拋光。主要對石英、硫化鋅以及KDP進(jìn)行了離子束刻蝕拋光,研究了不同的離子束工藝參數(shù)對離子束刻蝕拋光的影響；同時(shí)研究了離子束沉積修正拋光技術(shù),并對KDP進(jìn)行了離子束沉積修正拋光。(1)石英、硫化鋅以及KDP的離子束刻蝕拋光。研究了不同的工藝參數(shù)(離子束入射能量、離子束流、離子束入射角度以及工作氣體流量)對離子束刻蝕的影響,揭示了晶體表面在離子束刻蝕過程中表面形貌的演變與離子束參數(shù)之間關(guān)系,以及晶體表面的離子束刻蝕機(jī)理。(2)KDP的離子束沉積修正拋光。首先進(jìn)對制備好的平坦化層的減薄處理,對比了ICP減薄以及離子束刻蝕減薄,選擇了離子束刻蝕減薄平坦化層,工藝參數(shù)為：離子束入射角度為45°,離子束流為354 μA/cm2,離子束入射能量500eV,工作氣體中氬氣氧氣流量分別為7.2sccm和6sccm:然后選擇了離子束沉積修正拋光工藝參數(shù),選擇一個(gè)KDP和PI膠平坦化層有相同刻蝕速率,同時(shí)表面形貌不會有較大損失的工藝參數(shù),工藝參數(shù)為：離子束入射角度為450,離子束流為310 μ/cm2,離子束入射能量為400eV,工作氣體中氬氣氧氣流量分別為12.2sccm和1sccm:最后對KDP進(jìn)行了離子束沉積修正拋光,最終使得KDP表面粗糙度值降低了0.31nm。
[Abstract]:With the development of science and technology, space optical components, high power laser X ray optical systems have been more and more applied. At the same time, integrated circuits are also developing to large scale and very large scale.Therefore, the surface quality of optical and optoelectronic components is required.Ion beam etching polishing as a non-contact polishing technology has many advantages, so it has been widely used in obtaining high quality surface of optical and optoelectronic elements.This paper is divided into two parts: ion beam etching polishing and KDP ion beam deposition correction polishing.The ion beam etching polishing of quartz, zinc sulfide and KDP was carried out, and the effect of different ion beam process parameters on ion beam etching polishing was studied, and the ion beam deposition correction polishing technology was also studied.The ion beam etching polishing of KDP was carried out by ion beam deposition correction polishing of quartz, zinc sulphide and KDP.The effects of different process parameters (ion beam incident energy, ion beam current, ion beam incident angle and working gas flux) on ion beam etching were studied.The relationship between the evolution of surface morphology and ion beam parameters during ion beam etching and the ion beam etching mechanism of crystal surface were revealed.Firstly, the thinning treatment of the prepared flattening layer is introduced, and the ICP thinning and ion beam etching are compared, and the ion beam etching flattening layer is selected.The technological parameters are as follows: the incident angle of ion beam is 45 擄, the ion beam current is 354 渭 A / cm ~ 2, the incident energy of ion beam is 500eV, the flow rate of argon and oxygen in the working gas is 7.2sccm and 6sccm, respectively. The polishing process parameters are modified by ion beam deposition.Choosing a flat layer of KDP and Pi glue has the same etching rate, and the surface morphology will not have a large loss of process parameters.The process parameters are as follows: the incident angle of ion beam is 450, the ion beam current is 310 渭 / cm ~ 2, the incident energy of ion beam is 400eV, and the argon oxygen flux in the working gas is 12.2sccm and 1sccm respectively. Finally, the ion beam deposition correction polishing of KDP is carried out.Finally, the surface roughness value of KDP is reduced by 0.31 nm.
【學(xué)位授予單位】：西安工業(yè)大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2016
【分類號】：TN305.7
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本文編號：1762372