本文選題：摩擦誘導(dǎo)納米加工 + 選擇性刻蝕��； 參考：《西南交通大學(xué)》2017年碩士論文

【摘要】：單晶硅具有優(yōu)良的機械性能、電子學(xué)性能以及物理性能,被廣泛地應(yīng)用于構(gòu)建半導(dǎo)體器件、大規(guī)模集成電路、太陽能電池等方面。硅基納米加工技術(shù)在納米科技領(lǐng)域具有重要的地位,是實現(xiàn)納米科技產(chǎn)品的基礎(chǔ)。目前,典型的硅基納米加工技術(shù),包括光刻技術(shù)、納米壓印技術(shù)、聚焦離子束技術(shù)和掃描探針技術(shù)等,都在改進現(xiàn)有工藝的同時,進一步了拓展納米加工的應(yīng)用范圍。然而,隨著納米技術(shù)的深入發(fā)展,任何一種加工方法都難以滿足多元化的應(yīng)用需求。近年來,摩擦誘導(dǎo)選擇性刻蝕加工方法是在掃描探針加工技術(shù)的基礎(chǔ)上,結(jié)合濕法刻蝕技術(shù)進而提出的一種新型納米加工方法。該方法簡單、靈活、分辨率高,同時具備不依賴于模板以及外加電場等優(yōu)點。然而,摩擦誘導(dǎo)選擇性刻蝕過程基于化學(xué)反應(yīng),溫度對選擇性刻蝕加工的影響規(guī)律不清、加工機制不明,尚需開展進一步的研究。本文采用掃描探針顯微鏡、納米力學(xué)測試系統(tǒng)、自主研制的大面積微納米加工設(shè)備以及相關(guān)的分析測試手段,系統(tǒng)性地研究了溫度對單晶硅表面摩擦誘導(dǎo)選擇性刻蝕的影響,闡明了溫度對選擇性刻蝕過程的影響機制;在此基礎(chǔ)上進一步發(fā)展了單晶硅表面壓痕誘導(dǎo)選擇性刻蝕加工方法。本論文的主要研究內(nèi)容和創(chuàng)新點如下:(1)考察了溫度對單晶硅表面摩擦誘導(dǎo)選擇性刻蝕的影響規(guī)律在KOH溶液選擇性刻蝕過程中,單晶硅表面所形成的凸結(jié)高度隨著刻蝕溫度的升高而增加;而當(dāng)溫度為80℃時,所形成的凸結(jié)構(gòu)會出現(xiàn)高度不均勻情況。溫度的升高將導(dǎo)致表面粗糙度增大和親水性增強,而其微觀機械性能卻隨著溫度的升高而降低。利用X-射線光電子能譜(XPS),對選擇性刻蝕前后的表面化學(xué)成分分析表明:不同溫度下的選擇性刻蝕后,未在單晶硅表面并引入其他雜質(zhì)。(2)闡明了溫度對單晶硅表面摩擦誘導(dǎo)選擇性刻蝕的影響機制分析可知,溫度升高引起的更頻繁的碰撞頻率,從而導(dǎo)致劇烈的化學(xué)反應(yīng),即導(dǎo)致單晶硅選擇性刻蝕后所得到凸結(jié)構(gòu)高度增大。根據(jù)凸結(jié)構(gòu)高度隨溫度的變化擬合曲線表明,選擇性刻蝕速率的自然對數(shù)的變化與溫度的倒數(shù)是呈線性關(guān)系的,因而該過程可用阿累尼烏斯方程表達。進一步分析表明,摩擦誘導(dǎo)選擇性刻蝕的活化能Ea估算值為0.33～0.38 eV。(3)發(fā)展了單晶硅表面的壓痕誘導(dǎo)選擇性刻蝕加工方法基于摩擦誘導(dǎo)選擇性刻蝕機理,探索了單晶硅表面的壓痕誘導(dǎo)選擇性刻蝕納米加工方法。對于壓痕誘導(dǎo)選擇性刻蝕加工,刻蝕時間和壓痕載荷決定了金字塔凸結(jié)構(gòu)的高度及曲率半徑,即隨著刻蝕時間或者載荷的增加,凸結(jié)構(gòu)高度亦增加;通過控制加工參數(shù),可實現(xiàn)多針尖的陣列加工。本論文系統(tǒng)研究了溫度對單晶硅表面摩擦誘導(dǎo)選擇性刻蝕的影響規(guī)律,優(yōu)化加工條件,為單晶硅表面實現(xiàn)大高寬比結(jié)構(gòu)的可控加工奠定了基礎(chǔ)。同時,本文研究進一步豐富了摩擦誘導(dǎo)選擇性刻蝕加工的原理和方法,也探索了壓痕誘導(dǎo)選擇性刻蝕納米加工方法:通過控制加工參數(shù)可以獲得高度均勻一致的金字塔形凸結(jié)構(gòu)陣列,其有望應(yīng)用于多針尖陣列加工。
[Abstract]:Silicon has excellent mechanical properties, electronic properties and physical properties, is widely used in the construction of large-scale integrated circuits, semiconductor devices, solar cell and so on. The nano silicon processing technology plays an important role in the field of nano science and technology, is the basis of nano science and technology products. At present, the typical silicon based nano processing technology, including lithography, nanoimprint lithography, focused ion beam technology and scanning probe techniques, are on the improvement of the existing process at the same time, further expand the scope of application of nano machining. However, with the further development of nanotechnology, any kind of processing methods are difficult to meet the application requirements of diversification. In recent years, the friction induced selective etching the method is based on scanning probe processing technology, combined with a new type of nano machining method of wet etching technology and then put forward the method simply. A single, flexible, high resolution, and have not depend on the template and the applied electric field and other advantages. However, the friction induced selective etching process based on chemical reaction, the influence of temperature on the selective etching process is not clear, the processing mechanism is unknown, still need to carry out further research. This paper uses the scanning probe microscope, nanomechanical testing system, large the area developed by micro nano processing equipment and testing means, a systematic study of the influence induced by selective etching temperature on the silicon surface friction, the temperature effect and the mechanism of selective etching process; on the basis of the further development of the silicon surface indentation induced selective etching method. The main research of this paper the content and innovation are as follows: (1) the effects of temperature on the silicon surface friction law effect induced by selective etching in KOH solution. Selective etching process, forming the convex silicon surface height increase with the increase of etching temperature; when the temperature is 80 degrees centigrade, the convex structure formed will be highly inhomogeneous. Temperature increasing will lead to increase of surface roughness and hydrophilicity, and the micro mechanical properties but rather decreased with increasing temperature. By using X- ray photoelectron spectroscopy (XPS), surface chemical composition of selective etching before and after analysis showed that the selective etching under different temperature, not on the silicon surface and the introduction of other impurities. (2) the effect of temperature on friction mechanism induced by selective etching on the silicon surface analysis, temperature increase the collision frequency more frequently caused, resulting in severe chemical reaction, which leads to silicon selective etching by convex structure height increases. According to the convex structure height with temperature changes to The curve shows that the temperature change and the natural logarithm of the reciprocal of the selective etching rate is linear, so the process can be Arrhenius equation expression. Further analysis shows that the activation energy of Ea estimate is 0.33 ~ 0.38 eV. friction induced by selective etching (3) the development of the silicon surface indentation induced selective etching method based on friction induced selective etching mechanism, explore the silicon surface indentation induced by selective etching of nano machining method. For indentation induced selective etching, etching time and indentation load determines the height and radius of curvature of Pyramid convex structure, with the increase of etching time or load, the convex structure height is also increasing; by controlling the processing parameters, array the processing can achieve the tip. This paper studies the temperature on the silicon surface friction induced by selective etching. Sound rules, optimization of processing conditions for high aspect ratio controllable processing structure laid the foundation of the realization of the silicon surface. At the same time, this paper further enriches the principle and method of friction induced selective etching, but also explored the indentation induced selective etching method: nano processing Pyramid convex structure array uniform by controlling the processing parameters can be applied to many, it is expected to tip array processing.

【學(xué)位授予單位】：西南交通大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN304.12

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