本文選題：磁控濺射 + SiCN薄膜�。� 參考：《西北大學(xué)》2015年碩士論文

【摘要】：硅碳氮(SiCN)作為一種新型寬禁帶半導(dǎo)體材料,具有優(yōu)異的光學(xué)、電學(xué)和機(jī)械性能。其與si基集成電路工藝兼容、獨(dú)特的發(fā)光性能、帶隙寬度可調(diào)(紫外到可見光范圍)等特點(diǎn),使其成為光-電集成電路(Optoelectronic Integrated Circuit, OEIC)的優(yōu)選材料。采用射頻反應(yīng)磁控濺射法,以氬氣(工作氣體)、氮?dú)?反應(yīng)氣體)、硅靶、碳靶為源材料在Si/石英基底上制備SiCN薄膜。通過橢偏儀、X射線衍射儀、傅里葉紅外光譜儀、X射線光電子能譜儀、掃描電子顯微鏡、紫外-可見分光光度計(jì)和熒光光譜儀等儀器對所制備SiCN薄膜的膜厚、晶體結(jié)構(gòu)、表面形貌、化學(xué)鍵、透光率、光致發(fā)光等特性進(jìn)行了表征,較為系統(tǒng)地研究了Si源功率、C源功率、N源流量對SiCN薄膜的影響。結(jié)果表明,SiCN薄膜主要由Si、C、N三種元素構(gòu)成,并形成了以Si-N鍵、Si-C鍵、C-N鍵、C=N鍵、C-C鍵、C=C鍵為主的復(fù)雜三元網(wǎng)絡(luò)結(jié)構(gòu)。SiCN薄膜中Si、C互為替代元素,提升Si(C)源功率有助于提高薄膜中Si(C)元素的含量,降低C(Si)元素的含量；增大N源流量,Si元素的含量降低,c元素及N元素含量增加；由于表面氧化及物理吸附,薄膜會引入一定的O元素,其含量可以指示薄膜的粗糙度。同時提高Si源功率、C源功率、N源流量有助于提高SiCN薄膜的沉積速率,但過高的功率并不利于沉積速率的提高。SiCN薄膜具有良好的透光性,Si源功率的提升可以提高薄膜的光學(xué)帶隙,C源功率或N源流量的增加則會降低光學(xué)帶隙。SiCN薄膜中365nm、 440nm/450nm、 510nm/550nm處的發(fā)光分別是SiCN薄膜中非晶氧化硅缺陷、C原子的Sp2雜化和β-SiC納米晶的量子限制效應(yīng)引起的。
[Abstract]:As a new wide band gap semiconductor material, silicon carbon nitride (sic) has excellent optical, electrical and mechanical properties.It is compatible with si-based integrated circuit technology, unique luminescence performance and adjustable bandgap width (UV to visible light range), which makes it an excellent material for optoelectronic Integrated circuit (OEICs)SiCN thin films were prepared on Si/ quartz substrate by RF reactive magnetron sputtering with argon (working gas), nitrogen (reactive gas, silicon target, carbon target) as the source material.The thickness and crystal structure of SiCN thin films were studied by means of X-ray diffractometer, Fourier infrared spectrometer, X-ray photoelectron spectrometer, scanning electron microscope, UV-Vis spectrophotometer and fluorescence spectrometer.The surface morphology, chemical bond, transmittance and photoluminescence characteristics were characterized. The influence of Si source power, C source power and N source flux on SiCN films was systematically studied.The results show that the SiCN thin film is mainly composed of three elements, Si-C and C-N, and the complex ternary network structure. SiC is a substitute element in Si-C / C / C / C / C / C / C / C / C / C / C / C / C / C / C / C / C / C / C / C / C / C / C / C / C / C, respectively.Increasing the source power of Si-C can increase the content of Si-C in the film and decrease the content of Ca-Si-C, increase the flow rate of N source, decrease the content of C and N, and increase the content of C and N because of the surface oxidation and physical adsorption.A certain O element is introduced into the film, and its content can indicate the roughness of the film.At the same time, increasing Si source power and C source power and N source flow can improve the deposition rate of SiCN films.However, too high power is not conducive to the increase of deposition rate. SiCN thin film has good transmittance. The increase of Si source power can increase the optical band gap C source power or the N source flux, and decrease the optical band gap. SiCN thin film.The luminescence at 365nm, 440 nm / 450nm, 510nm/550nm is caused by the Sp2 hybrid of C atom of amorphous silicon oxide defect in SiCN film and the quantum confinement effect of 尾 -SiC nanocrystalline, respectively.
【學(xué)位授予單位】：西北大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN305.92

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