本文選題：氧化物半導(dǎo)體 + MgInSnO�。� 參考：《北京交通大學(xué)》2017年碩士論文

【摘要】：薄膜晶體管(thin film transistors,TFT)是平板顯示領(lǐng)域不可或缺的關(guān)鍵部件。以氧化鋅(ZnO)為代表的金屬氧化物薄膜晶體管以其遷移率高,開(kāi)口率高等優(yōu)點(diǎn)吸引了越來(lái)越多的關(guān)注,因此被認(rèn)為是替代傳統(tǒng)非晶硅(a-Si)和多晶硅(p-Si)的下一代薄膜晶體管技術(shù)。但ZnO薄膜通常是多晶結(jié)構(gòu),容易產(chǎn)生晶界缺陷,且在制備過(guò)程中容易產(chǎn)生氧空位缺陷,這制約了其性能的提高,而MgO擁有較強(qiáng)的金屬-氧鍵能,可以抑制氧空位的形成。然而,到目前為止,幾乎沒(méi)有關(guān)于MgO-TFT的報(bào)道。本文首次以MgInSnO為有源層制成底柵型薄膜晶體管,器件性能可以達(dá)到飽和遷移率約為12cm2/Vs,開(kāi)關(guān)比約為107,閾值電壓約為0-10V。主要研究?jī)?nèi)容如下:1.研究了退火溫度及退火氧氣流量對(duì)MgInSnO薄膜晶體管性能的影響,發(fā)現(xiàn)當(dāng)退火溫度為750℃時(shí)器件性能最佳,進(jìn)一步提高退火溫度使得MgInSnO薄膜由非晶態(tài)轉(zhuǎn)變?yōu)槎嗑B(tài),器件性能明顯下降;退火氧氣流量為400 SCCM時(shí)器件性能最佳,氧氣流量過(guò)高或過(guò)低都會(huì)使器件性能下降。2.研究了有源層厚度對(duì)MgInSnO薄膜晶體管性能的影響,發(fā)現(xiàn)有源層厚度為25nm時(shí)器件性能最佳,薄膜過(guò)厚時(shí)器件性能下降且由增強(qiáng)型轉(zhuǎn)變?yōu)楹谋M型。3.研究了寬長(zhǎng)比和器件尺寸對(duì)器件性能的影響,發(fā)現(xiàn)寬長(zhǎng)比小的器件遷移率較大,這是由于邊沿電流效應(yīng)的存在;而尺寸較小的器件遷移率較高,這是由于尺寸越小載流子的傳輸路徑越短,受到的散射越少。
[Abstract]:Thin film transistorsTFT is an indispensable key component in flat panel display.Metal oxide thin film transistors, such as zinc oxide (ZnO), have attracted more and more attention because of their high mobility and high opening rate. Therefore, they are considered as the next generation thin film transistors to replace traditional amorphous silicon (a-Si) and polycrystalline silicon (p-Si).However, ZnO thin films are usually polycrystalline structure, which is easy to produce grain boundary defects and oxygen vacancy defects in the preparation process, which restricts the improvement of their properties. However, MgO has a strong metal-oxygen bond energy, which can inhibit the formation of oxygen vacancies.So far, however, there have been few reports of MgO-TFT.In this paper, we first use MgInSnO as the active layer to fabricate the bottom gate type thin film transistor. The device can achieve saturation mobility of about 12 cm 2 / V s, switching ratio of about 107 and threshold voltage of 0 10 V.The main research contents are as follows: 1.The effects of annealing temperature and annealing oxygen flow rate on the properties of MgInSnO thin film transistors are studied. It is found that the device performance is the best when annealing temperature is 750 鈩，

本文編號(hào)：1759677