本文選題：碳化硅 + 電荷調(diào)制結(jié)終端　； 參考：《西安理工大學(xué)》2017年碩士論文

【摘要】：4H-SiC晶閘管以其耐壓高、通態(tài)壓降小、通態(tài)功耗低等優(yōu)點(diǎn)在特大功率的工頻開關(guān)應(yīng)用,尤其是高壓直流輸電(high voltage DC,HVDC)中具有較大優(yōu)勢(shì)。高效的結(jié)終端結(jié)構(gòu)設(shè)計(jì)是實(shí)現(xiàn)超高壓晶閘管的一大挑戰(zhàn)。本文針對(duì)20kV4H-SiC晶閘管提出一種稱為電荷調(diào)制JTE的新型終端結(jié)構(gòu),該終端僅需兩步離子注入便可形成具有電荷調(diào)制功能的三區(qū)JTE結(jié)構(gòu)。運(yùn)用Silvaco軟件對(duì)新型終端進(jìn)行了仿真研究,結(jié)果表明,該終端不僅具有高的耐壓能力,而且減小了擊穿電壓對(duì)JTE區(qū)劑量的敏感度,增加了工藝魯棒性。主要研究?jī)?nèi)容和結(jié)果如下:首先仿真研究了 4H-SiC晶閘管臺(tái)面結(jié)終端,臺(tái)面+JTE結(jié)終端以及臺(tái)面+三區(qū)JTE結(jié)終端三種終端技術(shù),得到各終端的主要結(jié)構(gòu)參數(shù)與器件擊穿特性之間的優(yōu)化關(guān)系,為新終端的提出奠定了一定的基礎(chǔ)。第二,提出一種新型的電荷調(diào)制JTE終端,理論分析了其耐壓機(jī)理。通過仿真手段優(yōu)化JTE中調(diào)制環(huán)的環(huán)間距、環(huán)個(gè)數(shù)等參數(shù)使器件擊穿特性達(dá)到最優(yōu)。最終獲得26.24kV的高耐壓值,且擊穿電壓在整個(gè)有效劑量區(qū)保持穩(wěn)定。研究光刻偏差對(duì)器件擊穿特性的影響,結(jié)果顯示光刻工藝偏差在2μm之內(nèi)時(shí),擊穿電壓變化甚小,說明了兩步離子注入工藝制作電荷調(diào)制JTE的可行性。第三,通過對(duì)比新型終端和單區(qū)JTE,三區(qū)JTE的終端效率,工藝容差,界面電荷影響幾個(gè)方面來說明新型終端的高效性。結(jié)果顯示相比于其他兩種終端,新型終端的電場(chǎng)分布均勻,其終端效率最高可達(dá)99%;擁有更優(yōu)的工藝容差特性,耐壓在一個(gè)寬的劑量范圍11.9×1012cm-2內(nèi)可以維持在90%的理想擊穿電壓以上;擊穿電壓對(duì)界面電荷敏感度降低,當(dāng)面電荷密度為-2×10121m-2時(shí),擊穿電壓僅下降了 0.9%。本文的研究結(jié)果對(duì)研發(fā)新型結(jié)終端結(jié)構(gòu)、提高器件耐壓及可靠性提供了有益的參考。
[Abstract]:The 4H-SiC thyristor has the advantages of high voltage resistance, low on-state voltage drop and low on-state power consumption, especially in the application of high-voltage direct current transmission (HVDC) high voltage DC.Efficient junction terminal structure design is a major challenge to the realization of UHV thyristors.In this paper, a novel terminal structure called charge modulated JTE is proposed for the 20kV4H-SiC thyristor. The terminal can form a three-zone JTE structure with charge modulation function by only two steps of ion implantation.The Silvaco software is used to simulate the new terminal. The results show that the terminal not only has high voltage resistance, but also reduces the sensitivity of breakdown voltage to the dose of JTE, and increases the process robustness.The main contents and results are as follows: firstly, three terminal technologies of 4H-SiC thyristor Mesa junction terminal, Mesa JTE junction terminal and Mesa three area JTE junction terminal are simulated.The optimized relationship between the main structure parameters of each terminal and the breakdown characteristics of the device is obtained, which lays a foundation for the new terminal.Secondly, a novel charge modulated JTE terminal is proposed and its voltage resistance mechanism is analyzed theoretically.By means of simulation, the parameters such as the ring spacing and the number of rings in JTE are optimized to optimize the breakdown characteristics of the device.Finally, the high voltage value of 26.24kV was obtained, and the breakdown voltage remained stable in the whole effective dose range.The effect of lithography deviation on the breakdown characteristics of the device is studied. The results show that the breakdown voltage changes very little when the lithography process deviation is less than 2 渭 m, which shows the feasibility of making charge modulated JTE by two-step ion implantation process.Thirdly, the efficiency of the new terminal is illustrated by comparing the terminal efficiency, process tolerance and interface charge of the new terminal with that of the single-zone JTE and the three-zone JTE.The results show that compared with the other two terminals, the electric field distribution of the new terminal is uniform, and the terminal efficiency can reach the maximum of 99. The terminal has better process tolerance, and the voltage resistance can be maintained above 90% of the ideal breakdown voltage in a wide dose range of 11.9 脳 1012cm-2.When the charge density is 2 脳 10121m-2, the breakdown voltage decreases only 0.9.The results of this paper provide a useful reference for the research and development of a new junction terminal structure and improve the voltage resistance and reliability of the device.
【學(xué)位授予單位】：西安理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN34

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本文編號(hào)：1758323