本文選題：雙頻微片激光器 + 光譜特性　； 參考：《杭州電子科技大學(xué)》2015年碩士論文

【摘要】：激光二極管端面抽運(yùn)的雙頻微片激光器在工業(yè)生產(chǎn)、科學(xué)研究、信息傳輸和國防建設(shè)等領(lǐng)域應(yīng)用普遍,尤其是隨著無線電頻譜資源的日趨緊張,頻率更高波段的毫米波頻段頻譜資源被提上了日程,雙頻微片激光器作為產(chǎn)生毫米波信號的相對簡單和有效的方法,因此近年來各國科學(xué)家對雙頻微片激光器的相關(guān)內(nèi)容表現(xiàn)了持續(xù)的研究興趣。本文主要研究雙頻微片激光器的特性,包括對LD抽運(yùn)的雙頻微片激光器的光譜和頻差特性研究和對小信號增益情況下雙頻激光放大器的理論模型的研究,具體包括以下幾方面內(nèi)容：(1)首先介紹了產(chǎn)生光生毫米波的技術(shù)及其工作原理,然后闡述了雙頻微片激光器的國內(nèi)外研究現(xiàn)狀,最后分析了雙頻微片激光器的發(fā)展趨勢和雙頻微片激光放大的科學(xué)意義。(2)闡述了雙頻微片激光器的基本原理、雙頻微片激光器常用激光晶體的特性、對微片晶體的選擇,并對Nd:YVO4晶體的激光特性進(jìn)行了詳細(xì)的介紹。同時,從激光四能級速率方程出發(fā),在近閾值抽運(yùn)和強(qiáng)光抽運(yùn)情況下,推導(dǎo)出雙頻微片激光器的閾值功率、輸出功率和斜效率等輸出特性。(3)理論分析雙頻微片激光器諧振腔內(nèi)的模式,分析單縱模雙縱模形成條件,并從實驗出發(fā)研究了激光二極管(LD)抽運(yùn)的、頻差可調(diào)的雙頻Nd:YVO4微片激光器的光譜特性。對于熒光譜寬固定的激光增益介質(zhì),輸出激光的光譜特性主要與抽運(yùn)功率、抽運(yùn)位置、諧振腔腔長等參數(shù)相關(guān)；通過控制相關(guān)參數(shù),可以調(diào)整輸出激光不同波長頻譜峰之間的相對頻差。根據(jù)實驗結(jié)果表明,當(dāng)LD抽運(yùn)電流為14.5 A時,抽運(yùn)光與諧振腔模達(dá)到良好的匹配,輸出穩(wěn)定的雙縱模雙頻激光,相應(yīng)的頻差可以達(dá)到超過90 GHz：改變抽運(yùn)參數(shù),相應(yīng)頻差在92.22 GHz-94.24 GHz之間變化；增加諧振腔的腔長時,輸出的激光縱模間隔減少并可輸出三縱模,其中兩頻峰之間的最小頻差可達(dá)到26.5 GHz。(4)建立小信號增益雙頻放大器理論模型。在小信號增益情況下,從四能級速率方程出發(fā),對經(jīng)過行波放大器之后的輸出譜線和增益譜寬進(jìn)行研究和分析,建立理論模型,并利用MATLAB軟件模擬仿真各個參數(shù),得出如下結(jié)論：當(dāng)增益譜寬不變時,比較放大器增益前后激光頻譜的變化發(fā)現(xiàn),通過雙頻放大器之后輸出的光譜包絡(luò)輪廓比入射光譜包絡(luò)要窄。當(dāng)改變增益譜寬時,發(fā)現(xiàn)在增益譜寬較大時,輸出激光光譜輪廓相對比較平坦,在增益譜寬較小時,輸出激光光譜輪廓相對比較陡峭。
[Abstract]:Laser diode end-pumped dual-frequency microchip lasers are widely used in the fields of industrial production, scientific research, information transmission and national defense construction, especially with the increasing shortage of radio spectrum resources.The frequency spectrum of millimeter-wave band in higher frequency band has been put on the agenda. Dual-frequency microchip laser is used as a relatively simple and effective method to generate millimeter-wave signal.In recent years, scientists all over the world have shown a sustained interest in the research of dual-frequency microchip lasers.This paper mainly studies the characteristics of dual frequency microchip laser, including the spectrum and frequency difference characteristics of LD pumped dual frequency microchip laser and the theoretical model of dual frequency laser amplifier with small signal gain.This paper introduces the technology and working principle of generating millimeter wave, and then describes the research status of dual-frequency microchip laser at home and abroad.Finally, the development trend of dual-frequency microchip laser and the scientific significance of double-frequency microchip laser amplification are analyzed. The basic principle of dual-frequency microchip laser, the characteristics of laser crystal commonly used in dual-frequency microchip laser, and the choice of microchip crystal are described.The laser characteristics of Nd:YVO4 crystal are introduced in detail.At the same time, based on the four-level rate equation of laser, the threshold power of dual-frequency microchip laser is derived under the condition of near-threshold pumping and strong light pumping.Output power and skew efficiency.) the mode in resonator of dual-frequency microchip laser is analyzed theoretically, and the forming conditions of single longitudinal mode and double longitudinal mode are analyzed, and the laser diode LD pumped by laser diode is studied based on the experiment.Spectral characteristics of dual frequency Nd:YVO4 microchip laser with adjustable frequency difference.For the laser gain medium with fixed fluorescence spectrum width, the spectral characteristics of the output laser are mainly related to the parameters such as pump power, pump position, cavity length and so on.The relative frequency difference between the spectral peaks of different wavelengths of the output laser can be adjusted.The experimental results show that when the LD pump current is 14.5A, the pump light can match well with the resonant cavity mode, and the output stable dual-longitudinal mode dual-frequency laser can reach a frequency difference of more than 90 GHz.The corresponding frequency difference varies from 92.22 GHz-94.24 GHz to 92.22 GHz-94.24 GHz, and when the cavity length is increased, the output longitudinal mode interval decreases and the three-longitudinal mode can be output, in which the minimum frequency difference between the two frequency peaks can reach 26.5 GHz. 4) the theoretical model of the small signal gain dual-frequency amplifier is established.In the case of small signal gain, starting from the four-level rate equation, the output spectral line and gain spectrum width after traveling wave amplifier are studied and analyzed, the theoretical model is established, and various parameters are simulated by MATLAB software.The following conclusions are drawn: when the gain spectrum width is invariant, compared with the laser spectrum changes before and after the gain, it is found that the spectral envelope profile after the dual-frequency amplifier output is narrower than that of the incident spectral envelope.When the gain spectrum width is changed, it is found that the output laser spectrum profile is relatively flat when the gain spectrum width is large, and the output laser spectrum profile is relatively steep when the gain spectrum width is small.
【學(xué)位授予單位】：杭州電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN248

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