本文選題：硼摻雜金剛石 + 微波等離子體化學(xué)氣相沉積(MPCVD)��； 參考：《中國(guó)空間科學(xué)技術(shù)》2017年02期

【摘要】：為解決電子倍增器、場(chǎng)發(fā)射陰極和粒子/光子探測(cè)器現(xiàn)有陰極材料次級(jí)發(fā)射系數(shù)低且發(fā)射不穩(wěn)定的問(wèn)題,對(duì)微波等離子體化學(xué)氣相沉積(Microwave Plasma Chemical Vapor Deposition,MPCVD)法結(jié)合H等離子體表面處理工藝制備的不同B2H6/CH4濃度的硼摻雜金剛石薄膜的次級(jí)發(fā)射能力進(jìn)行了研究。樣品表面掃描電子顯微鏡和拉曼光譜分析結(jié)果顯示,硼摻雜金剛石膜表面形貌與未摻雜的金剛石膜相似,樣品表面均為高純度的金剛石相。將置于空氣中數(shù)日且未經(jīng)任何表面處理的硼摻雜金剛石樣品進(jìn)行次級(jí)電子發(fā)射性能測(cè)試,結(jié)果顯示一次電子入射能量為1keV時(shí),得到高達(dá)18.3的二次電子發(fā)射系數(shù)。試驗(yàn)證實(shí)這種具有高二次電子發(fā)射系數(shù)的硼摻雜金剛石膜,暴露空氣中由于表面氧化會(huì)破壞其表面的負(fù)電子親和勢(shì),而真空中加熱會(huì)使表面重新恢復(fù)負(fù)電子親和勢(shì),這種負(fù)電子親和勢(shì)的完整保留,提高了該材料次級(jí)發(fā)射的穩(wěn)定性,在器件中具有重要的應(yīng)用前景。
[Abstract]:In order to solve the problem of low secondary emission coefficient and unstable emission of field emission cathode and particle / photon detector,The secondary emission properties of boron-doped diamond films with different B2H6/CH4 concentrations prepared by microwave plasma chemical vapor deposition (MPCVD) method and H plasma surface treatment were studied.The results of scanning electron microscope and Raman spectroscopy showed that the morphology of boron doped diamond film was similar to that of undoped diamond film and the sample surface was high purity diamond phase.The secondary electron emission properties of boron doped diamond samples which were placed in air for several days without any surface treatment were measured. The results show that the secondary electron emission coefficient of 18.3 is obtained when the incident energy of the primary electron is 1keV.The experimental results show that the boron doped diamond film with high secondary electron emission coefficient will destroy the negative electron affinity of the surface in the exposed air because of the oxidation of the surface, while heating in vacuum will restore the negative electron affinity of the surface.The complete retention of the negative electron affinity potential improves the stability of the secondary emission of the material and has an important application prospect in the device.
【作者單位】： 北京真空電子技術(shù)研究所微波電真空器件國(guó)家級(jí)重點(diǎn)實(shí)驗(yàn)室;
【基金】：微波電真空器件國(guó)家級(jí)重點(diǎn)實(shí)驗(yàn)室基金(9140C0505011006)
【分類號(hào)】：TN104

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