本文選題：溫度分布 + MATLAB編程�。� 參考：《西安電子科技大學(xué)》2015年碩士論文

【摘要】：現(xiàn)代通信技術(shù)的高速發(fā)展,使得異質(zhì)結(jié)雙極型晶體管(HBT)的應(yīng)用日益廣泛。在雷達(dá)、移動(dòng)電話(huà)、光通信等領(lǐng)域都有HBT的廣泛應(yīng)用。相比傳統(tǒng)Si CMOS器件,HBT器件的功率密度高、增益大、相位噪聲小、線(xiàn)性度好,尤其是截止頻率高,使其成為微波射頻電路有源器件的重要選擇。但與此同時(shí),HBT器件功率大、電流密度大,使得器件正常工作時(shí)的溫度較高,影響了HBT電路的可靠性。因此溫度分布的研究對(duì)于HBT電路的設(shè)計(jì)來(lái)說(shuō)非常重要。版圖布局是集成電路設(shè)計(jì)的關(guān)鍵環(huán)節(jié),給出器件和芯片的溫度分布,從而在版圖設(shè)計(jì)時(shí)充分考慮溫度的影響,實(shí)現(xiàn)電磁熱一體化分析,能夠提高電路設(shè)計(jì)的正確性。本文首先總結(jié)了研究HBT電路分布的重要性和當(dāng)今國(guó)內(nèi)外集成電路溫度分布的研究現(xiàn)狀,然后分析了HBT器件的工作原理和自熱效應(yīng)原理,又介紹了相關(guān)的熱傳導(dǎo)數(shù)值模擬方法和有限元分析理論。接著介紹了本文中的工作:基于MATLAB編程,提出了一個(gè)分析HBT集成電路版圖級(jí)溫度分布的方法,其主要步驟如下:(1)根據(jù)廠(chǎng)商提供的工藝庫(kù)信息,使用有限元軟件Comsol,對(duì)芯片中使用的HBT晶體管進(jìn)行幾何建模,對(duì)幾何模型施加熱載荷和邊界條件,再進(jìn)行網(wǎng)格劃分,最后進(jìn)行熱穩(wěn)態(tài)求解,得到單器件的溫度分布數(shù)據(jù)。將溫度分布數(shù)據(jù)導(dǎo)入MATLAB軟件中進(jìn)行函數(shù)擬合;(2)使用電路仿真軟件對(duì)設(shè)計(jì)的電路進(jìn)行仿真,得到每個(gè)HBT晶體管的功耗數(shù)據(jù),將其標(biāo)注在電路版圖的發(fā)射極中心位置,使用GDSII格式進(jìn)行導(dǎo)出,使用LinkCAD軟件進(jìn)行編輯,保留發(fā)射極和功耗信息,將版圖轉(zhuǎn)換為DXF格式;(3)使用MATLAB軟件進(jìn)行編程,自動(dòng)提取發(fā)射極坐標(biāo)和功耗信息,計(jì)算各個(gè)HBT器件的中心點(diǎn)溫度,并考慮多個(gè)器件耦合情況下對(duì)溫度分布的精確求解,最后繪制溫度分布圖和等溫線(xiàn)分布圖。為了驗(yàn)證以上方法的有效性,本次工作中還用熱成像儀對(duì)正常工作情況下的電路芯片進(jìn)行了成像測(cè)試。測(cè)試結(jié)果與用本文方法得出的溫度分布在整體趨勢(shì)上較為一致。但仿真的結(jié)果在部分版圖區(qū)域偏低,最后分析了仿真結(jié)果偏低的原因,并提出了根據(jù)仿真結(jié)果對(duì)版圖進(jìn)行修正的方法,還提出了本方法的一些有待提高之處。
[Abstract]:With the rapid development of modern communication technology, heterojunction bipolar transistor (HBT) is widely used.HBT is widely used in radar, mobile phone, optical communication and other fields.Compared with the conventional Si CMOS devices, the power density, gain, phase noise and linearity are higher, especially the cut-off frequency, which makes it an important choice of active devices in microwave RF circuits.But at the same time, the high power and high current density of the HBT device make the temperature of the device higher when it works normally, which affects the reliability of the HBT circuit.Therefore, the study of temperature distribution is very important for the design of HBT circuits.Layout is the key link in the integrated circuit design. The temperature distribution of the device and chip is given. In order to fully consider the influence of temperature in layout design, electromagnetic and thermal integration analysis can be realized, and the correctness of circuit design can be improved.In this paper, the importance of studying the distribution of HBT circuits and the current research status of temperature distribution of integrated circuits at home and abroad are summarized, and then the working principle and the principle of self-heating effect of HBT devices are analyzed.The numerical simulation method of heat conduction and the theory of finite element analysis are also introduced.Then the work of this paper is introduced: based on MATLAB programming, a method for analyzing the layout temperature distribution of HBT integrated circuits is proposed, the main steps of which are as follows: 1) according to the process database information provided by the manufacturer,The HBT transistors used in the chip are modeled by finite element software Comsol. the heating load and boundary conditions are applied to the geometry model, and then the meshes are divided. Finally, the thermal steady state is solved, and the temperature distribution data of the single device are obtained.The temperature distribution data is imported into MATLAB software for function fitting. The circuit simulation software is used to simulate the designed circuit. The power consumption data of each HBT transistor is obtained, and the position of emitter center of the circuit layout is marked.GDSII format is used for export, LinkCAD software is used for editing, emitter and power consumption information is retained, layout is converted to DXF format / 3) MATLAB software is used to program, automatic extraction of transmission polar coordinates and power consumption information,The center temperature of each HBT device is calculated, and the exact solution of the temperature distribution is considered in the case of multiple devices coupling. Finally, the temperature distribution diagram and the isotherm distribution diagram are drawn.In order to verify the effectiveness of the above method, the thermal imager is also used to test the circuit chip under normal working conditions.The test results are consistent with the temperature distribution obtained by the method in this paper.But the result of simulation is on the low side in some areas of layout. At last, the reason of low result of simulation is analyzed, and the method of modifying layout according to the result of simulation is put forward, and some improvements of this method are also put forward.
【學(xué)位授予單位】：西安電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TN322.8;TN407;TP319

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本文編號(hào)：1741401