本文選題：多孔硅 + 單槽電化學(xué)腐蝕法��； 參考：《鄭州大學(xué)》2015年碩士論文

【摘要】：硅材料是微電子技術(shù)和現(xiàn)代信息技術(shù)中非常重要且常用的一種半導(dǎo)體材料,但硅也是一種間接帶隙的半導(dǎo)體材料,發(fā)光效率很低。多孔硅的出現(xiàn)解決了硅材料發(fā)光效率不理想的問題,不但使得硅的發(fā)光效率得到改善,而且可以在室溫下發(fā)出肉眼可見的光致發(fā)光現(xiàn)象。目前為止,多孔硅(porous silicon:PS)的研究已深入到應(yīng)用領(lǐng)域,但是仍有很多理論和實(shí)踐方面的問題需要解決。多孔硅的表面形貌是影響多孔硅發(fā)光性能的主要因素之一,本文就主要研究制備條件(陰陽極之間的距離h、腐蝕反應(yīng)時間t、腐蝕液濃度c、腐蝕電流密度J)改變對多孔硅的表面形貌及光致發(fā)光特性的影響。首先,簡要介紹了多孔硅的發(fā)展史、制備方法、形成機(jī)理、發(fā)光機(jī)制及應(yīng)用領(lǐng)域;接著,介紹了單槽電化學(xué)腐蝕法制備多孔硅的實(shí)驗(yàn)材料及儀器、實(shí)驗(yàn)裝置及步驟,并對多孔硅的測試表征方法做了簡單的介紹;采用控制變量法制備出不同腐蝕條件下的多孔硅樣品,并用掃描電鏡(SEM)、透射電鏡(TEM)、光學(xué)顯微鏡及光致發(fā)光(PL)光譜對其表面形貌、發(fā)光特性進(jìn)行表征,來研究不同制備條件對多孔硅的影響。研究結(jié)果顯示:在改變陰陽極的距離時,出現(xiàn)了高質(zhì)量的多孔結(jié)構(gòu)以及以前沒有觀察到結(jié)構(gòu)形貌,如火山口狀結(jié)構(gòu)及其周圍的硅柱簇、硅納米線結(jié)構(gòu)、骨架狀結(jié)構(gòu)等等,并對其形成的原因做了簡單的分析與介紹。掃描電鏡圖像顯示,在樣品的表面有若干個火山口一樣的結(jié)構(gòu),火山口的底部出現(xiàn)了硅納米線狀結(jié)構(gòu),直徑在幾十個納米,它的形成對以后的研究有重要的影響,為采用電化學(xué)方法制備納米線提供了新的思路。PL光譜顯示了火山口狀結(jié)構(gòu)與周圍的多孔硅結(jié)構(gòu)的發(fā)光特性,多孔硅的發(fā)光峰位在650nm左右,而火山口狀結(jié)構(gòu)的發(fā)光峰位在600nm左右,推測原因可能是火山口附近存在的硅納米線組成的硅柱簇,導(dǎo)致了發(fā)光峰位的藍(lán)移及發(fā)光強(qiáng)度的增大。為了分析以上結(jié)構(gòu)形貌的形成過程,還需要進(jìn)一步的研究與發(fā)現(xiàn)。
[Abstract]:Silicon is a very important and commonly used semiconductor material in microelectronics and modern information technology, but silicon is also a kind of indirect bandgap semiconductor material, and its luminescence efficiency is very low.The appearance of porous silicon solves the problem that the luminescence efficiency of silicon is not ideal. It not only improves the luminescence efficiency of silicon, but also emits visible photoluminescence at room temperature.Up to now, the research of porous silicon on PS has gone deep into the field of application, but there are still many theoretical and practical problems to be solved.The surface morphology of porous silicon is one of the main factors affecting the luminescence properties of porous silicon.In this paper, the effects of preparation conditions (distance between cathode and anode, corrosion time t, corrosion solution concentration c, corrosion current density J) on the surface morphology and photoluminescence characteristics of porous silicon were studied.Firstly, the development history, preparation method, formation mechanism, luminescence mechanism and application field of porous silicon are briefly introduced, and then the experimental materials and instruments, experimental devices and steps for the preparation of porous silicon by single cell electrochemical etching are introduced.The surface morphology of porous silicon samples under different corrosion conditions was investigated by SEM, TEM, optical microscope and photoluminescence (PLL) spectra.The effects of different preparation conditions on porous silicon were investigated.The results show that there are high quality porous structures when the distance between cathode and cathode is changed, and no structural morphology has been observed before, such as crater structure and its surrounding silicon cluster, silicon nanowire structure, skeleton structure, etc.The causes of its formation are also briefly analyzed and introduced.Scanning electron microscope images show that there are several crater like structures on the surface of the sample, and silicon nanowire structure appears at the bottom of the crater, with a diameter of dozens of nanometers, and its formation has an important influence on the future research.The PL spectra show the luminescence characteristics of the crater structure and the surrounding porous silicon structure. The peak position of the porous silicon is about 650nm, while the peak position of the crater structure is about 600nm.It is suggested that the existence of silicon nanowires near the crater leads to the blue shift of the luminescence peak and the increase of the luminescence intensity.In order to analyze the formation process of the above structural morphology, further research and discovery are needed.
【學(xué)位授予單位】：鄭州大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN304.12

【參考文獻(xiàn)】

相關(guān)期刊論文 前10條

1 趙景勇;閆康平;;多孔硅的形貌、制備和應(yīng)用[J];有機(jī)硅材料;2013年06期

2 楊麗嬌;王金良;楊成濤;梅麗潤;;硅納米線光致發(fā)光的原理及研究進(jìn)展[J];材料導(dǎo)報;2012年21期

3 董杉木;張娟琨;白麗榮;劉武勝;盧金輝;馬寧;;納米多孔硅阻抗生物傳感器的研究[J];生物加工過程;2009年04期

4 任清褒;多孔硅制備方法的進(jìn)展[J];麗水師范�？茖W(xué)校學(xué)報;1999年05期

5 鮑希茂,宋海智;硅基發(fā)光材料研究進(jìn)展[J];材料研究學(xué)報;1997年06期

6 陳乾旺,周貴恩,朱警生,李曉光,張?jiān)：?水熱腐蝕制備多孔硅的研究[J];自然科學(xué)進(jìn)展;1997年06期

7 陳乾旺,李新建,朱警生,周貴恩,李曉光,張?jiān)：?多孔硅研究的新進(jìn)展[J];電子顯微學(xué)報;1997年04期

8 黃宜平，，鄭大衛(wèi)，李愛珍，湯庭鰲，崔塹，張翔九;多孔硅的微觀結(jié)構(gòu)及其氧化特性[J];半導(dǎo)體學(xué)報;1995年01期

9 楊國偉;;多孔硅(PS)制備新方法[J];半導(dǎo)體光電;1993年04期

10 宋登元;;多孔硅的可見光譜發(fā)光現(xiàn)象及其應(yīng)用前景[J];半導(dǎo)體光電;1992年04期

相關(guān)碩士學(xué)位論文 前2條

1 王坤;單槽法制備多孔硅及其發(fā)光性能研究[D];鄭州大學(xué);2014年

2 明奇;雙槽電化學(xué)腐蝕制備多孔硅及其發(fā)光性能研究[D];鄭州大學(xué);2010年

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