本文選題：多孔硅 + 單槽電化學腐蝕法�。� 參考：《鄭州大學》2015年碩士論文

【摘要】：硅材料是微電子技術和現(xiàn)代信息技術中非常重要且常用的一種半導體材料,但硅也是一種間接帶隙的半導體材料,發(fā)光效率很低。多孔硅的出現(xiàn)解決了硅材料發(fā)光效率不理想的問題,不但使得硅的發(fā)光效率得到改善,而且可以在室溫下發(fā)出肉眼可見的光致發(fā)光現(xiàn)象。目前為止,多孔硅(porous silicon:PS)的研究已深入到應用領域,但是仍有很多理論和實踐方面的問題需要解決。多孔硅的表面形貌是影響多孔硅發(fā)光性能的主要因素之一,本文就主要研究制備條件(陰陽極之間的距離h、腐蝕反應時間t、腐蝕液濃度c、腐蝕電流密度J)改變對多孔硅的表面形貌及光致發(fā)光特性的影響。首先,簡要介紹了多孔硅的發(fā)展史、制備方法、形成機理、發(fā)光機制及應用領域;接著,介紹了單槽電化學腐蝕法制備多孔硅的實驗材料及儀器、實驗裝置及步驟,并對多孔硅的測試表征方法做了簡單的介紹;采用控制變量法制備出不同腐蝕條件下的多孔硅樣品,并用掃描電鏡(SEM)、透射電鏡(TEM)、光學顯微鏡及光致發(fā)光(PL)光譜對其表面形貌、發(fā)光特性進行表征,來研究不同制備條件對多孔硅的影響。研究結果顯示:在改變陰陽極的距離時,出現(xiàn)了高質量的多孔結構以及以前沒有觀察到結構形貌,如火山口狀結構及其周圍的硅柱簇、硅納米線結構、骨架狀結構等等,并對其形成的原因做了簡單的分析與介紹。掃描電鏡圖像顯示,在樣品的表面有若干個火山口一樣的結構,火山口的底部出現(xiàn)了硅納米線狀結構,直徑在幾十個納米,它的形成對以后的研究有重要的影響,為采用電化學方法制備納米線提供了新的思路。PL光譜顯示了火山口狀結構與周圍的多孔硅結構的發(fā)光特性,多孔硅的發(fā)光峰位在650nm左右,而火山口狀結構的發(fā)光峰位在600nm左右,推測原因可能是火山口附近存在的硅納米線組成的硅柱簇,導致了發(fā)光峰位的藍移及發(fā)光強度的增大。為了分析以上結構形貌的形成過程,還需要進一步的研究與發(fā)現(xiàn)。
[Abstract]:Silicon is a very important and commonly used semiconductor material in microelectronics and modern information technology, but silicon is also a kind of indirect bandgap semiconductor material, and its luminescence efficiency is very low.The appearance of porous silicon solves the problem that the luminescence efficiency of silicon is not ideal. It not only improves the luminescence efficiency of silicon, but also emits visible photoluminescence at room temperature.Up to now, the research of porous silicon on PS has gone deep into the field of application, but there are still many theoretical and practical problems to be solved.The surface morphology of porous silicon is one of the main factors affecting the luminescence properties of porous silicon.In this paper, the effects of preparation conditions (distance between cathode and anode, corrosion time t, corrosion solution concentration c, corrosion current density J) on the surface morphology and photoluminescence characteristics of porous silicon were studied.Firstly, the development history, preparation method, formation mechanism, luminescence mechanism and application field of porous silicon are briefly introduced, and then the experimental materials and instruments, experimental devices and steps for the preparation of porous silicon by single cell electrochemical etching are introduced.The surface morphology of porous silicon samples under different corrosion conditions was investigated by SEM, TEM, optical microscope and photoluminescence (PLL) spectra.The effects of different preparation conditions on porous silicon were investigated.The results show that there are high quality porous structures when the distance between cathode and cathode is changed, and no structural morphology has been observed before, such as crater structure and its surrounding silicon cluster, silicon nanowire structure, skeleton structure, etc.The causes of its formation are also briefly analyzed and introduced.Scanning electron microscope images show that there are several crater like structures on the surface of the sample, and silicon nanowire structure appears at the bottom of the crater, with a diameter of dozens of nanometers, and its formation has an important influence on the future research.The PL spectra show the luminescence characteristics of the crater structure and the surrounding porous silicon structure. The peak position of the porous silicon is about 650nm, while the peak position of the crater structure is about 600nm.It is suggested that the existence of silicon nanowires near the crater leads to the blue shift of the luminescence peak and the increase of the luminescence intensity.In order to analyze the formation process of the above structural morphology, further research and discovery are needed.
【學位授予單位】：鄭州大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN304.12

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