本文選題：InGaN　切入點：AlGaN　出處：《西安電子科技大學(xué)》2015年碩士論文

【摘要】：隨著近年來的發(fā)展,GaN基紫外LED成為繼藍(lán)光LED之后新研究領(lǐng)域熱點和市場關(guān)注的焦點。GaN基紫外LED具有體積小、壽命長、環(huán)保以及堅固耐用等優(yōu)點,在應(yīng)用于新一代紫外光源方面具有廣闊的的應(yīng)用前景。長波段365 nm是傳統(tǒng)紫外光源的一個典型波長,廣泛應(yīng)用于固化、曝光、防偽等領(lǐng)域。但是,目前該長波波段的GaN基紫外LED的發(fā)光效率仍然很低,發(fā)光性能還遠(yuǎn)遠(yuǎn)滿足不了市場的需求,無法完全取代傳統(tǒng)長波紫外光源。因此,對于365 nm長波波段的紫外LED進(jìn)行深入的研究,開發(fā)出具有更好光電性能的器件,這對未來的紫外LED取代傳統(tǒng)紫外光源并廣泛應(yīng)用于市場各領(lǐng)域具有十分重要的意義和影響。本論文主要研究GaN基紫外LED多量子阱結(jié)構(gòu)調(diào)整對其發(fā)光效率的影響,希望通過調(diào)整使得365 nm左右波段的紫外LED發(fā)光性能得到提升。論文首先介紹了LED以及紫外LED的概況和發(fā)展情況,之后對GaN基材料的一些性質(zhì)做了詳細(xì)的接受,接著又對生長材料的MOCVD技術(shù)做了詳細(xì)的介紹,并全面地介紹了XRD、PL、EL、AFM和SEM這些實驗中用到的表征方法。最后設(shè)計實驗通過調(diào)整量子阱阱寬和壘層Al摻量來實現(xiàn)提升發(fā)光效率的目的。兩部分實驗成果如下:1.對InGaN/AlGaN量子阱阱寬調(diào)整進(jìn)行了兩個批次實驗。在保證波長在365 nm左右波段的條件下,第一個批次實驗確定了2倍到5倍阱寬的發(fā)光性能優(yōu)化范圍,第二個批次實驗則確定了3倍最優(yōu)阱寬,使得外延片的發(fā)光效率最高,性能最好。最終也就得出了通過調(diào)整量子阱阱寬來提高365 nmGaN基長波紫外LED發(fā)光效率的方案結(jié)果。2.對InGaN/AlGaN量子阱壘層Al摻量調(diào)整也進(jìn)行了兩個批次實驗。在保證波長在365 nm左右波段的條件下,在第一個批次實驗中確認(rèn)了壘層Al摻量在由5%變大時,發(fā)光效率變低,性能變差。在第二個批次實驗中,確認(rèn)了壘層Al摻量在由5%變小時,發(fā)光亮度略有變低。因此確定了壘層Al摻量控制在5%最合適。最終也就得出通過調(diào)整量子阱壘層Al摻量來提高365 nmGaN基長波紫外LED發(fā)光效率的方案結(jié)果。通過兩個批次兩部分的實驗結(jié)果,基本實現(xiàn)了調(diào)整量子阱的一些結(jié)構(gòu)來使得365nmGaN基長波紫外LED的光效提升,這也達(dá)到了本論文研究的目的和意義。
[Abstract]:With the development of recent years, GaN-based UV LED has become a new research hotspot and market focus after Blu-ray LED. GaN-based UV LED has many advantages, such as small size, long life, environmental protection and durability.It has a broad application prospect in the application of the new generation ultraviolet light source.Long wavelength 365nm is a typical wavelength of traditional ultraviolet light source, widely used in solidification, exposure, anti-counterfeiting and other fields.Therefore, the ultraviolet LED at 365nm wavelength has been studied deeply, and a device with better photoelectric performance has been developed.It is of great significance and influence for the future UV LED to replace the traditional UV sources and to be widely used in various fields of the market.In this paper, the effect of GaN based UV LED multiple quantum well structure adjustment on its luminescence efficiency is studied. It is hoped that the luminescence performance of UV LED at about 365nm can be improved by adjusting the structure.Firstly, the general situation and development of LED and UV LED are introduced, then some properties of GaN based materials are accepted in detail, and then the MOCVD technology of grown materials is introduced in detail.The characterization methods used in the experiments, such as SEM and ELM, are introduced in detail.Finally, we design experiments to improve the luminescence efficiency by adjusting the width of quantum well and the Al content of barrier layer.Two parts of the experiment are as follows: 1.Two batches of experiments were carried out to adjust the width of InGaN/AlGaN quantum wells.Under the condition that the wavelength is about 365 nm, the first batch experiment determines the optimal range of luminescence performance of 2 to 5 times well width, and the second batch experiment determines the optimal well width of 3 times, which makes the luminescence efficiency of the epitaxial wafer the highest.The performance is the best.Finally, the scheme of improving the luminescence efficiency of long wavelength ultraviolet LED based on 365 nmGaN is obtained by adjusting the width of quantum well.Two batch experiments were also carried out to adjust the Al content in the barrier layer of InGaN/AlGaN quantum wells.Under the condition that the wavelength is about 365 nm, it is confirmed in the first batch experiment that when the Al content of barrier layer increases from 5% to 5%, the luminescence efficiency becomes lower and the performance becomes worse.In the second batch of experiments, it was confirmed that the Al content of the barrier layer changed from 5% to a little smaller, and the luminance decreased slightly.Therefore, the optimum Al content of barrier layer is 5%.Finally, the scheme of improving the luminescence efficiency of long wavelength ultraviolet LED based on #number0# nmGaN is obtained by adjusting the Al content of quantum well barrier layer.Based on the experimental results of two batches and two parts, it is basically realized to adjust some structures of quantum wells to improve the light efficiency of 365nmGaN based long-wavelength ultraviolet LED, which also achieves the purpose and significance of this thesis.
【學(xué)位授予單位】：西安電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN312.8

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相關(guān)期刊論文 前2條

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本文編號：1721673