發(fā)布時(shí)間：2018-04-05 16:05

  本文選題：鋰鎂鋅氧化物　切入點(diǎn)：薄膜晶體管　出處：《北京交通大學(xué)》2015年碩士論文

【摘要】：透明薄膜晶體管(TFT)是廣泛應(yīng)用在平板顯示和透明電路等領(lǐng)域的電子器件。隨著大尺寸液晶顯示器和有源有機(jī)發(fā)光二極管的發(fā)展,硅基TFT已經(jīng)不能很好的滿足其在工業(yè)上的應(yīng)用,主要原因是硅基TFT有著遷移率太低(1cm2/V s)、對(duì)可見(jiàn)光敏感等缺點(diǎn)。金屬氧化物TFT,尤其是ZnO基TFT以其遷移率高、開(kāi)口率低等優(yōu)點(diǎn)成為了硅基TFT的理想替代品。但是,金屬氧化物TFT也存在一些問(wèn)題,如性能不穩(wěn)定,遷移率還不足夠高等缺點(diǎn),這些缺點(diǎn)限制了金屬氧化物TFT的進(jìn)一步發(fā)展。針對(duì)金屬氧化物TFT遷移率還不足夠高等問(wèn)題,我們研制了LiMgZnO-TFT,主要研究工作如下： 一、研究了退火溫度對(duì)LiMgZnO-TFT性能的影響,發(fā)現(xiàn)退火溫度800℃時(shí),器件性能最佳,遷移率為3.03cm2/V s,閾值電壓為17V,開(kāi)關(guān)比為4.1E+06; 二、研究了溝道長(zhǎng)度對(duì)LiMgZnO-TFT性能的影響,發(fā)現(xiàn)溝道長(zhǎng)度最小為50um時(shí),器件性能最佳,遷移率為9.85cm2/V s,閾值電壓7V,開(kāi)關(guān)比為5E+06； 三、研究了有源層厚度對(duì)LiMgZnO-TFT性能的影響,測(cè)得有源層厚度為35nm時(shí),器件性能最佳,遷移率為10.83cm2/Vs,閾值電壓為-18V,開(kāi)關(guān)比為9.49E+06； 四、研究了器件制備過(guò)程中氧氣流量對(duì)LiMgZnO-TFT性能的影響,發(fā)現(xiàn)氧氣流量為3SCCM時(shí),器件性能最佳,遷移率為12.8cm2/V s,閾值電壓為-15V,開(kāi)關(guān)比為2.41E+07。
[Abstract]:Transparent thin film transistor (TFT) is an electronic device widely used in flat panel display and transparent circuit.With the development of large size liquid crystal display (LCD) and active organic light-emitting diodes (ALEDs), silicon-based TFT can not satisfy its industrial application. The main reason is that silicon-based TFT has many disadvantages, such as low mobility of 1 cm ~ 2 / V / s, sensitivity to visible light and so on.Metal oxide (TFT), especially ZnO based TFT, is an ideal substitute for silicon-based TFT because of its high mobility and low opening rate.However, there are some problems in metal oxide TFT, such as unstable performance, low mobility and so on, which limit the further development of metal oxide TFT.To solve the problem that the mobility of metal oxide TFT is not high enough, we have developed LiMgZnO-TFT.The main research work is as follows:Firstly, the effect of annealing temperature on the properties of LiMgZnO-TFT is studied. It is found that the annealing temperature at 800 鈩，

本文編號(hào)：1715478