本文選題：大功率IGBT　切入點(diǎn)：電場(chǎng)仿真　出處：《華北電力大學(xué)(北京)》2017年碩士論文

【摘要】：隨著大功率IGBT器件的快速發(fā)展,如4.5 kV和6.5 kV電壓等級(jí)器件的市場(chǎng)化,在牽引運(yùn)輸、電力系統(tǒng)領(lǐng)域?qū)⒂心芰εc基于晶閘管的電流驅(qū)動(dòng)型器件進(jìn)行競(jìng)爭(zhēng)。但是由于常規(guī)的焊接式IGBT器件主要存在兩種失效問題,即鋁引線鍵合點(diǎn)脫落和焊料層失效,故借鑒晶閘管封裝形式,通過采用壓力接觸封裝的新型壓接式IGBT器件得到了廣泛關(guān)注。因此,本文針對(duì)新型壓接式大功率IGBT器件的設(shè)計(jì),基于數(shù)值計(jì)算的方法,研究器件的絕緣問題,并通過仿真對(duì)器件的結(jié)構(gòu)設(shè)計(jì)進(jìn)行優(yōu)化和指導(dǎo),同時(shí)縮短器件的研發(fā)周期,具有重要的實(shí)際意義和應(yīng)用價(jià)值。本文的研究?jī)?nèi)容基于器件的結(jié)構(gòu)主要包括了三個(gè)方面,由內(nèi)到外分別是芯片終端區(qū)結(jié)構(gòu),子模組封裝結(jié)構(gòu)和管殼結(jié)構(gòu)研究。首先,通過建立的IGBT芯片終端區(qū)的模型,分析了場(chǎng)限環(huán)多個(gè)變量如場(chǎng)限環(huán)的寬度、間距、個(gè)數(shù)等對(duì)芯片擊穿電壓的影響,并根據(jù)初始的設(shè)計(jì)進(jìn)行優(yōu)化,得到了優(yōu)化后的結(jié)構(gòu)。隨后,本文開展了基于有限元的電場(chǎng)仿真計(jì)算,建立了IGBT芯片子模組的仿真模型,提出并分析了三個(gè)電場(chǎng)強(qiáng)度集中的區(qū)域,即縱向間隙、橫向間隙和銀片與框架間隙,并針對(duì)相應(yīng)的區(qū)域,提出了施加電阻層和增加間隙兩種實(shí)際可行的改進(jìn)措施。最后,針對(duì)大功率壓接式IGBT管殼設(shè)計(jì),從目前的可參考標(biāo)準(zhǔn)和有限元電場(chǎng)仿真兩個(gè)方向出發(fā),對(duì)器件管殼的絕緣設(shè)計(jì)進(jìn)行校核。另外,在仿真中分析得到如果子模組與管殼距離過近,加之管殼過薄,那么內(nèi)部子模組的電場(chǎng)強(qiáng)度分布會(huì)一定程度上影響到管殼內(nèi)外表面的電場(chǎng)強(qiáng)度分布,故在實(shí)際的設(shè)計(jì)中需要考慮一定的裕度。
[Abstract]:With the rapid development of high-power IGBT devices, such as the marketization of 4.5 kV and 6.5 kV voltage grade devices, the field of traction transportation and power system will be able to compete with the thyristor based current-driven devices.However, there are two main failure problems in conventional solder IGBT devices, that is, aluminum lead bond joint shedding and solder layer failure, so the thyristor packaging form is used for reference.A new type of pressure-bonded IGBT device with pressure contact packaging has been paid more and more attention.Therefore, based on the numerical calculation method, this paper studies the insulation of the new type of high-power IGBT devices, and optimizes and guides the structural design of the devices through simulation, and shortens the research and development period of the devices.It has important practical significance and application value.The research content of this paper is based on the structure of the device, which includes three aspects: chip terminal structure, submodule encapsulation structure and shell structure from inside to outside.Firstly, through the model of the terminal area of IGBT chip, the influence of several variables such as the width, spacing and number of the field limiting ring on the breakdown voltage of the chip is analyzed, and the optimized structure is obtained according to the initial design.Then, the electric field simulation calculation based on finite element method is carried out, and the simulation model of IGBT chip submodule is established, and three regions of electric field intensity concentration, that is, longitudinal gap, transverse gap and silver sheet and frame gap, are proposed and analyzed.According to the corresponding region, two practical and feasible improvement measures are put forward, which are applying resistor layer and increasing gap.Finally, aiming at the design of high-power IGBT tube and shell, the insulation design of the tube and shell is checked from the two directions of the current reference standard and the finite element electric field simulation.In addition, if the distance between the submodule and the shell is too close and the shell is too thin, the electric field intensity distribution of the inner submodule will influence the distribution of the electric field intensity on the inner and outer surface of the tube and shell to some extent.Therefore, a certain margin should be considered in the actual design.
【學(xué)位授予單位】：華北電力大學(xué)(北京)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN322.8

【參考文獻(xiàn)】

相關(guān)期刊論文 前9條

1 錢照明;;電力電子器件及其應(yīng)用的現(xiàn)狀和發(fā)展[J];變頻器世界;2014年06期

2 丁榮軍;劉國友;;軌道交通用高壓IGBT技術(shù)特點(diǎn)及其發(fā)展趨勢(shì)[J];機(jī)車電傳動(dòng);2014年01期

3 張朋;韓榮剛;金銳;于坤山;何維國;劉雋;;電動(dòng)汽車用大功率IGBT模塊封裝技術(shù)[J];智能電網(wǎng);2014年01期

4 金銳;于坤山;張朋;劉先正;何維國;劉雋;;IGBT器件的發(fā)展現(xiàn)狀以及在智能電網(wǎng)中的應(yīng)用[J];智能電網(wǎng);2013年02期

5 竇澤春;忻蘭苑;劉國友;黃蓉;徐凝華;吳義伯;;壓接式IGBT模塊的熱學(xué)特性研究[J];機(jī)車電傳動(dòng);2013年03期

6 高明超;劉鉞楊;劉江;趙哿;金銳;于坤山;;IGBT多級(jí)場(chǎng)板終端結(jié)構(gòu)的仿真和驗(yàn)證[J];固體電子學(xué)研究與進(jìn)展;2013年01期

7 竇澤春;Rupert Stevens;忻蘭苑;劉國友;徐凝華;;新型壓接式IGBT模塊的結(jié)構(gòu)設(shè)計(jì)與特性分析[J];機(jī)車電傳動(dòng);2013年01期

8 蔣華平;陳萬軍;劉闖;饒祖剛;董彬;張波;;Design and optimization of linearly graded-doping junction termination extension for 3.3-kV-class IGBTs[J];半導(dǎo)體學(xué)報(bào);2011年12期

9 張健;呂長(zhǎng)志;張小玲;謝雪松;黃月強(qiáng);;基于ANSYS的IGBT熱模擬與分析[J];微電子學(xué);2011年01期

相關(guān)碩士學(xué)位論文 前2條

1 繆潤(rùn)妍;半導(dǎo)體功率器件的高壓終端結(jié)設(shè)計(jì)[D];復(fù)旦大學(xué);2012年

2 陸界江;1700V高壓IGBT結(jié)終端保護(hù)技術(shù)仿真分析與工藝實(shí)現(xiàn)[D];沈陽工業(yè)大學(xué);2009年

，

本文編號(hào)：1712444