本文選題：太赫茲　切入點：亞波長結(jié)構(gòu)　出處：《電子科技大學(xué)》2017年碩士論文

【摘要】：隨著大規(guī)模集成電路工藝水平的進一步發(fā)展,采用二元光學(xué)技術(shù)能夠制作的圖形尺寸越來越小以及線條的精細程度也隨之提高�；诙鈱W(xué)技術(shù)制造的亞波長結(jié)構(gòu)給太赫茲增透窗口設(shè)計提供了新的思路,因此也吸引了很多從事光學(xué)透過率研究學(xué)者的關(guān)注。亞波長增透結(jié)構(gòu)是一種周期性浮雕結(jié)構(gòu),該結(jié)構(gòu)的特征尺寸與特定工作光波的波長大小相當甚至更小的。它的最大特點就是其周期結(jié)構(gòu)尺寸足夠小時,器件僅存在零級反射衍射和透射衍射,因此衍射效率高于一般的衍射光學(xué)器件。該結(jié)構(gòu)的另一特點就是可以通過改變浮雕結(jié)構(gòu)的周期大小、占空比大小和高度大小等特征尺寸參數(shù)改變其透過率和反射率。本文結(jié)合等效介質(zhì)理論和嚴格耦合波理論對亞波長增透結(jié)構(gòu)進行優(yōu)化設(shè)計,并且通過實驗制作了太赫茲增透窗口,有效的提高了太赫茲頻率為1.7T時的窗口通過率。本文的主要內(nèi)容簡述如下:(1)介紹了太赫茲波的概念和太赫茲傳感器,以及二元光學(xué)的發(fā)展。介紹了研究亞波長增透結(jié)構(gòu)的理論方式,并指出標量衍射理論不再適用于亞波長結(jié)構(gòu),應(yīng)該采用矢量衍射理論。(2)介紹了等效介質(zhì)理論,并采用該理論推導(dǎo)出一維、二維亞波長的零級等效折射率和二級等效折射率。討論了亞波長結(jié)構(gòu)僅存在零級衍射時的周期閾值。介紹了嚴格耦合波理論,并采用該理論推導(dǎo)出二維亞波長柱狀體結(jié)構(gòu)的透過率和反射率。(3)結(jié)合等效介質(zhì)理論和嚴格耦合波理論,利用MATLAB編程進行仿真,得到理論上反射率最低的雙面太赫茲增透窗口結(jié)構(gòu),使用L-Edit繪制對應(yīng)的圖形并制作掩膜版。整個計算過程為今后的太赫茲增透窗口設(shè)計提供有價值的參考。(4)介紹了光刻流程。詳細說明了太赫茲增透窗口的具體制作步驟以及工藝流程。由于刻蝕深度比較深,光刻膠不足以充當掩膜層,提出可增鍍一層氮化硅作為刻蝕硅的掩膜層,采用ICP進行深硅刻蝕,采用RIE對氮化硅進行刻蝕。整個制作過程為微細加工工藝提供了一些可靠的參考。(5)使用太赫茲時域光譜儀(THz-TDs)對制作好的單面、雙面增透結(jié)構(gòu)進行透過率測試。通過分析測試結(jié)果,測試結(jié)果表明:當太赫茲頻率為1.7T時,單面二元光學(xué)增透結(jié)構(gòu)透過率達到了57.52%;雙面二元光學(xué)增透結(jié)構(gòu)透過率達到了68.15%,較本體硅片都有一定的提高。
[Abstract]:With the further development of large-scale integrated circuit (LSI) technology, the size of the graphics that can be produced by binary optics becomes smaller and smaller, and the fine degree of the lines is also improved.The subwavelength structure based on binary optics technology provides a new idea for the design of terahertz antireflection window, and therefore attracts the attention of many researchers engaged in optical transmittance research.The subwavelength antireflection structure is a kind of periodic relief structure. The characteristic size of the structure is equivalent to or even smaller than the wavelength of a specific working light wave.Its biggest characteristic is that its periodic structure size is small enough, the device only exists zero order reflection diffraction and transmission diffraction, so the diffraction efficiency is higher than that of the ordinary diffraction optical device.Another characteristic of the structure is that the transmittance and reflectivity can be changed by changing the characteristic dimension parameters such as the period size duty cycle and height of the relief structure.In this paper, the subwavelength antireflection structure is optimized by combining the equivalent medium theory and the strict coupling wave theory, and the terahertz antireflection window is made through experiments, which effectively improves the window pass rate when the terahertz frequency is 1.7 T.The concept of terahertz wave, terahertz sensor and the development of binary optics are introduced.This paper introduces the theoretical method of studying subwavelength antireflection structure, and points out that the scalar diffraction theory is no longer suitable for subwavelength structure, and the equivalent medium theory should be introduced by vector diffraction theory.The zero-order equivalent refractive index and the second-order equivalent refractive index of the second wave length are obtained.The periodic threshold of the subwavelength structure with only zero order diffraction is discussed.The theory of strictly coupled wave is introduced, and the transmittance and reflectivity of the cylindrical structure of the two-dimensional wavelength are derived by using this theory. Combining with the theory of equivalent medium and the theory of strictly coupled wave, the simulation is carried out by using MATLAB programming.A double-sided terahertz antireflection window structure with the lowest reflectivity in theory is obtained. The corresponding figure is drawn by using L-Edit and the mask plate is made.The whole calculation process provides a valuable reference for future terahertz antireflection window design.Detailed description of the terahertz antireflection window of the specific manufacturing steps and technological process.Because the etching depth is deep, the photoresist is not enough to be used as the mask layer. A layer of silicon nitride can be added as the mask for etching silicon. ICP is used for deep silicon etching and RIE is used for etching silicon nitride.The whole fabrication process provides some reliable reference for the micromachining process. THz-TDs are used to test the transmittance of the single and double-sided antireflection structures made by the THz time domain spectrometer (THz-TDs).The results show that when the terahertz frequency is 1.7 T, the transmittance of one-sided binary optical antireflection structure reaches 57.52, and that of double-sided binary optical antireflection structure reaches 68.15, which is higher than that of bulk silicon wafer.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：O441;TN402

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