本文選題：微加工　切入點(diǎn)：微尺度磨削　出處：《東北大學(xué)學(xué)報(bào)(自然科學(xué)版)》2017年07期

【摘要】：為了獲得具有較好表面質(zhì)量的典型硬脆材料單晶硅微結(jié)構(gòu),采用微尺度磨削技術(shù),利用直徑為0.9 mm的微磨棒沿單晶硅(100)晶面進(jìn)行磨削.首先通過(guò)三因素五水平的正交試驗(yàn)分析出影響單晶硅微尺度磨削表面粗糙度的主次因素;其次優(yōu)化出獲得較小表面粗糙度的單晶硅微尺度磨削工藝;最后通過(guò)單因素試驗(yàn)研究單晶硅微磨削表面粗糙度(Ra)隨工藝參數(shù)的變化規(guī)律.結(jié)果表明:在沿單晶硅(100)晶面的微磨削過(guò)程(20 000 r/min≤v_s≤60 000 r/min,20μm/s≤v_w≤170μm/s和3μm≤a_p≤15μm)中,主軸轉(zhuǎn)速對(duì)R_a影響最大;當(dāng)主軸轉(zhuǎn)速(v_s)為50 000 r/min、進(jìn)給速度(v_w)為20μm/s、磨削深度(a_p)為3μm時(shí),R_a最小;R_a隨vs的增大基本呈減小趨勢(shì),但v_s過(guò)大時(shí)機(jī)床主軸出現(xiàn)振動(dòng),R_a出現(xiàn)增大趨勢(shì).R_a隨v_w和a_p的增大而增大.
[Abstract]:In order to obtain the microstructures of typical hard and brittle materials with good surface quality, the micro-grinding technique was adopted, and the micro-grinding rod with a diameter of 0.9 mm was used to grinding along the crystal plane of the single crystal silicon (100).Firstly, the primary and secondary factors affecting the surface roughness of monocrystalline silicon micro-grinding are analyzed by orthogonal experiments of three factors and five levels, and then the micro-scale grinding process of single crystal silicon with smaller surface roughness is optimized.Finally, the variation of surface roughness with process parameters is studied by single factor experiment.褰撲富杞磋漿閫，

本文編號(hào)：1702603