本文選題：超材料　切入點(diǎn)：太赫茲調(diào)制器　出處：《電子科技大學(xué)》2017年碩士論文

【摘要】：本文主要基于電磁超材料的特性完成以下三部分的工作:極化不敏感的電磁誘導(dǎo)透明效應(yīng)(electromagnetically induced transparency effects,EIT)的調(diào)制器設(shè)計(jì),多頻帶諧振調(diào)制器的設(shè)計(jì)與研制,低電導(dǎo)率材料的超寬帶吸收調(diào)制器設(shè)計(jì)。在EIT效應(yīng)的太赫茲調(diào)制器設(shè)計(jì)中主要完成以下三部分的工作:首先,完成亮-亮模式耦合的極化不敏感EIT效應(yīng)的太赫茲調(diào)制器的設(shè)計(jì),電磁誘導(dǎo)透明點(diǎn)在0.828 THz,Q值為15.3,通過800 nm激光照射半導(dǎo)體襯底改變電導(dǎo)率設(shè)計(jì)出兩種調(diào)制方式,透明點(diǎn)幅度調(diào)制深度分別為73%與34%。其次,完成亮-暗模式耦合的極化不敏感EIT效應(yīng)的太赫茲調(diào)制器設(shè)計(jì),透明點(diǎn)在0.3 THz,Q值為150。最后,通過研究?jī)煞N器件的互補(bǔ)結(jié)構(gòu)發(fā)現(xiàn)在EIT的頻帶內(nèi)互補(bǔ)原理不適用的現(xiàn)象。在多頻帶調(diào)制器的設(shè)計(jì)與研制中主要完成以下四部分的工作:首先,設(shè)計(jì)實(shí)現(xiàn)一種加載螺旋臂的結(jié)構(gòu)雙頻帶諧振結(jié)構(gòu),諧振結(jié)構(gòu)的諧振頻點(diǎn)分別為0.28 THz、0.59 THz,利用激光照射半導(dǎo)體設(shè)計(jì)兩種調(diào)制方式:第一個(gè)諧振點(diǎn)的S21的幅度調(diào)制深度為54.8%和兩個(gè)諧振點(diǎn)的S21的幅度同時(shí)的調(diào)制深度為54.8%;其次,在雙頻帶諧振結(jié)構(gòu)上添加L型金屬結(jié)構(gòu)實(shí)現(xiàn)三頻帶諧振結(jié)構(gòu),諧振頻點(diǎn)分別為0.256THz、0.49 THz、0.67 THz;然后,利用激光照射在三頻帶諧振結(jié)構(gòu)實(shí)現(xiàn)分別對(duì)第二個(gè)頻點(diǎn)與第三個(gè)頻點(diǎn)的S21幅度的調(diào)制,調(diào)制深度為54.8%,也可以實(shí)現(xiàn)對(duì)三個(gè)頻點(diǎn)S21幅度的同時(shí)調(diào)制,調(diào)制深度為41%;最后,完成實(shí)物加工與測(cè)試,測(cè)試與仿真S21曲線吻合良好。在基于低電導(dǎo)率材料的超寬帶可調(diào)吸收器設(shè)計(jì)中主要完成以下兩方面的工作:首先,利用低電導(dǎo)率的合金材料以開口環(huán)為基礎(chǔ)設(shè)計(jì)出超寬帶的吸收結(jié)構(gòu),半峰值吸收帶寬為4 THz,相對(duì)吸收帶寬Bw=108%,通過激光照射到嵌入結(jié)構(gòu)中的硅半導(dǎo)體實(shí)現(xiàn)x極化入射波的半峰值吸收帶寬在2.4 TH-3.8 THz之間動(dòng)態(tài)調(diào)制。其次,在開口環(huán)結(jié)構(gòu)為基礎(chǔ)設(shè)計(jì)對(duì)稱的復(fù)合吸收結(jié)構(gòu),實(shí)現(xiàn)半峰值吸收帶寬為4.3 THz,相對(duì)帶寬Bw=118%的超寬帶吸收結(jié)構(gòu),并通過激光激勵(lì)嵌入結(jié)構(gòu)中的硅半導(dǎo)體可以實(shí)現(xiàn)吸收帶寬在1.7 THz-4.1 THz間的調(diào)制。
[Abstract]:Based on the characteristics of electromagnetic metamaterials, the following three parts have been completed in this paper: the design of electromagnetic induced induced transparency effects modulator, the design and development of multi-band resonant modulator. The design of ultra-wideband absorption modulator for low conductivity materials. In the design of terahertz modulator for EIT effect, the following three parts are accomplished: firstly, the design of terahertz modulator with bright bright mode coupling polarization insensitive to EIT effect is completed. The electromagnetically induced transparency point is 15.3 at 0.828 THZN Q. Two modulation methods are designed to change the conductivity of semiconductor substrate by 800 nm laser irradiation. The amplitude modulation depth of the transparent point is 73% and 34% respectively. A terahertz modulator for polarimetric insensitive EIT effect with bright dark mode coupling is designed with a transparent point of 0. 3 THZ Q of 150. Finally, By studying the complementary structure of the two devices, we find that the complementary principle is not applicable in the frequency band of EIT. In the design and development of the multi-band modulator, the following four parts are accomplished: first, A dual-band resonant structure with a loaded spiral arm is designed and implemented. The resonant frequency of the resonant structure is 0.28 THzN 0.59 THZ respectively. Two modulation modes are designed by laser irradiation semiconductor: the amplitude modulation depth of S21 of the first resonant point is 54.8% and the amplitude of S21 of the two resonant points is 54.8% at the same time. The three-band resonant structure is realized by adding L-type metal structure to the dual-band resonant structure. The resonant frequency points are 0.256 THzN 0.49 THzN 0.67 THZ respectively. The modulation of S21 amplitude of the second frequency point and the third frequency point is realized by laser irradiation in three frequency band resonant structure. The modulation depth is 54.8. the modulation depth of the S21 amplitude of the three frequency points can also be realized simultaneously, and the modulation depth is 41. The test and simulation S21 curves agree well with each other. In the design of ultra-wideband tunable absorber based on low conductivity material, the following two aspects are accomplished: first of all, The absorption structure of UWB is designed by using low conductivity alloy material based on open ring. The half-peak absorption bandwidth is 4 THZ, and the relative absorption bandwidth is Bwn 108. The half-peak absorption bandwidth of x polarization incident wave is dynamically modulated between 2.4 TH-3.8 THz and 2.4 TH-3.8 THz by laser irradiation to the silicon semiconductor embedded in the structure. A symmetrical composite absorption structure is designed on the basis of the open ring structure. The half-peak absorption bandwidth is 4.3 THZ and the relative bandwidth is 11.8%. The modulation of absorption bandwidth of 1.7 THz-4.1 THz can be realized by laser excited silicon semiconductor in embedded structure.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN761

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本文編號(hào)：1680568