本文選題：絕緣柵雙極型晶體管　切入點(diǎn)：短路　出處：《電力電子技術(shù)》2017年07期

【摘要】：針對(duì)中低壓絕緣柵雙極型晶體管(IGBT)器件GPU50HF120D1W1進(jìn)行了不同短路時(shí)間的測(cè)試,發(fā)現(xiàn)存在4種短路失效模式,通過(guò)定義臨界短路能量,將4種失效模式分為兩大類(lèi)。高于臨界能量的失效模式中,延遲失效的主要原因是漏電流與溫度形成了正反饋,導(dǎo)致器件持續(xù)升溫,超長(zhǎng)時(shí)失效是延遲失效的一種極限情況;而低于臨界能量的失效模式中,造成短時(shí)失效的主要原因是器件加工生產(chǎn)過(guò)程中的缺陷和不一致性引起局部漏電流過(guò)大,造成關(guān)斷失效的主要原因是大電流快速關(guān)斷和動(dòng)態(tài)雪崩觸發(fā)了IGBT的閂鎖效應(yīng)。
[Abstract]:In this paper, the short circuit time of GPU50HF120D1W1 is tested. Four kinds of short circuit failure modes are found. The critical short circuit energy is defined by defining the critical short circuit energy. Four kinds of failure modes are divided into two categories. In the failure modes with higher critical energy, the main reason of delay failure is the positive feedback between leakage current and temperature, which leads to the continuous heating of the device. However, in the failure mode with lower critical energy, the main cause of short-time failure is the excessive local leakage current caused by the defects and inconsistency in the manufacturing process of the device. The main causes of turn-off failure are fast turn-off of large current and dynamic avalanche which trigger the latch effect of IGBT.
【作者單位】： 上海交通大學(xué)微電子學(xué)院;寧波達(dá)新半導(dǎo)體有限公司;
【分類(lèi)號(hào)】：TN322.8
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本文編號(hào)：1679880