八羥基喹啉鋅與八羥基喹啉銅晶體的制備及性質(zhì)研究
發(fā)布時(shí)間:2018-03-28 19:37
本文選題:八羥基喹啉銅晶體 切入點(diǎn):八羥基喹啉鋅品體 出處:《山東大學(xué)》2015年碩士論文
【摘要】:八羥基喹啉金屬配合物屬于有機(jī)小分子半導(dǎo)體材料,由于其良好的熱穩(wěn)定性及高熒光量子效率等獨(dú)特的性質(zhì),被廣泛應(yīng)用于有機(jī)發(fā)光二極管(OLED)等有機(jī)電子器件中。有機(jī)半導(dǎo)體材料具有較弱的自旋軌道耦合作用和超精細(xì)相互作用,自旋弛豫時(shí)間極長(zhǎng),在新興的有機(jī)自旋電子學(xué)等領(lǐng)域具有極大的潛力。然而,目前實(shí)驗(yàn)所測(cè)有機(jī)材料的自旋擴(kuò)散長(zhǎng)度遠(yuǎn)低于理論預(yù)期,其原因可能在于目前制備的有機(jī)自旋電子器件中的有機(jī)層多為真空蒸鍍或者旋涂的有機(jī)半導(dǎo)體薄膜,為非晶或微晶結(jié)構(gòu),內(nèi)部存在著大量的缺陷、雜質(zhì)等,極大的降低了器件的遷移率及自旋擴(kuò)散長(zhǎng)度。為提高有機(jī)材料的自旋擴(kuò)散長(zhǎng)度,進(jìn)而提高有機(jī)自旋電子器件的性能,我們提出制備高質(zhì)量的有機(jī)半導(dǎo)體晶體,從而為制備高質(zhì)量單晶或納米晶有機(jī)自旋電子器件提供材料基礎(chǔ)。高質(zhì)量的有機(jī)半導(dǎo)體晶體分子排布有序,結(jié)構(gòu)穩(wěn)定,具有較高的遷移率和熱穩(wěn)定性,有利于提高器件的性能及研究材料的本征物理性質(zhì)及本征自旋輸運(yùn)特性。本文選擇在具有優(yōu)異光電性質(zhì)的有機(jī)小分子八羥基喹啉鋅及八羥基喹啉銅材料,通過(guò)三種不同的方法,物理氣相輸運(yùn)(PVT)法、溶液法及退火法,制備出了高質(zhì)量的微米級(jí)有機(jī)晶體材料,并研究了其結(jié)構(gòu)及性質(zhì)。主要研究?jī)?nèi)容及結(jié)果如下:(1)PVT方法,選擇高純氬氣作為載氣,制備了八羥基喹啉鋅晶體。通過(guò)X射線(xiàn)衍射、傅里葉紅外光譜對(duì)晶體的質(zhì)量及內(nèi)部分子結(jié)構(gòu)進(jìn)行了測(cè)量,得知其晶體質(zhì)量良好。通過(guò)光致發(fā)光譜的測(cè)試,我們研究了晶體的光學(xué)性能。八羥基喹啉鋅晶體的發(fā)光峰位于535nm處,屬于綠光發(fā)光材料。相較于八羥基喹啉鋅薄膜,晶體的峰位沒(méi)有太大的變化。(2)通過(guò)對(duì)熱蒸發(fā)鍍膜制備的八羥基喹啉鋅薄膜在氬氣的環(huán)境下進(jìn)行退火處理,發(fā)現(xiàn)薄膜發(fā)生自組裝,生成了八羥基喹啉鋅晶體。通過(guò)傅里葉紅外對(duì)其內(nèi)部結(jié)構(gòu)進(jìn)行了測(cè)試。通過(guò)光致發(fā)光譜的測(cè)試,發(fā)現(xiàn)退火后的八羥基喹啉鋅發(fā)光強(qiáng)度變大。分析原因可能是由于晶體生長(zhǎng)過(guò)程中,分子內(nèi)π光強(qiáng)堆積作用、氫鍵作用等分子間相互作用加強(qiáng),使得退火后薄膜的發(fā)光強(qiáng)度遠(yuǎn)大于退火前薄膜的發(fā)光強(qiáng)度。(3)采用溶液法,制備了八羥基喹啉銅晶體。然后對(duì)其形貌、結(jié)構(gòu)以及光學(xué)性質(zhì)進(jìn)行了深入的分析和研究。選擇氯仿作為有機(jī)溶劑,配置了三種不同濃度的八羥基喹啉銅溶液。隨著氯仿的揮發(fā),八羥基喹啉銅分子自組裝,生成六面體晶體。利用傅里葉紅外光譜、X射線(xiàn)衍射等方法對(duì)八羥基喹啉銅晶體的質(zhì)量及分子內(nèi)部結(jié)構(gòu)進(jìn)行了表征,結(jié)合實(shí)驗(yàn)數(shù)據(jù),我們對(duì)其可能的生長(zhǎng)機(jī)理進(jìn)行了分析。此外,利用光致發(fā)光譜對(duì)制備的晶體及200m厚的八羥基喹啉銅薄膜的光學(xué)性質(zhì)進(jìn)行了測(cè)試,并做了對(duì)比分析。觀(guān)察到八羥基喹啉銅的發(fā)光區(qū)主要位于綠光區(qū)域。且晶體在705nm處產(chǎn)生一個(gè)新的發(fā)光峰。分析原因可能是由三重態(tài)到基態(tài)的躍遷導(dǎo)致的。此外,還研究了溫度對(duì)八羥基喹啉銅晶體發(fā)光性質(zhì)的影響。隨著溫度的升高,八羥基喹啉銅晶體的發(fā)光強(qiáng)度變?nèi)?在寬波段處的發(fā)光峰存在一定的藍(lán)移。
[Abstract]:Eight hydroxyquinoline metal complexes belong to small molecule organic semiconductor materials, because of its good properties of thermal stability and Gao Yingguang quantum efficiency unique, is widely used in organic light emitting diode (OLED) and other organic electronic devices. The spin orbit coupling effect of organic semiconductor materials with weak hyperfine interaction and spin relaxation time very long, has a great potential in the emerging field of organic spintronics. However, at present the measured spin diffusion length of organic material is much lower than the theoretical expectations, the reason may be that organic spintronic devices currently in the preparation of the organic layer for vacuum evaporation of organic semiconductor thin film plating or spin coating, non amorphous or microcrystalline structure, impurity inside there are a lot of defects, etc., greatly reducing the mobility and spin devices. In order to enhance the spin diffusion length of organic material The diffusion length, and improve the performance of electronic devices of organic spin, we propose organic semiconductor crystal growth of high quality, so as to provide the material basis for the preparation of high quality single crystal or nanocrystalline organic spintronic devices. Molecular organic semiconductor crystal arrangement of high quality orderly, stable structure, high mobility and thermal stability, have to improve the performance of materials and devices of the intrinsic physical properties and intrinsic spin transport properties. This choice in small organic molecules with excellent optical properties of eight hydroxyquinoline zinc and eight hydroxyquinoline copper material, by three different methods, physical vapor transport (PVT) method, solution method and annealing method, prepared micron organic crystal materials of high quality, and studied its structure and properties. The main research contents and results are as follows: (1) PVT method, selection of high purity argon as carrier gas, preparation Eight hydroxyquinoline zinc crystals. By means of X ray diffraction, Fourier transform infrared spectroscopy on the crystal quality and internal molecular structure were measured and the crystal quality is good. The photoluminescence spectra, we studied the optical properties of the crystals. Eight hydroxyquinoline zinc crystal luminescence peaks are located at 535nm, which belongs to the green light materials. Compared to the eight hydroxyquinoline zinc crystal film, the peak position has not changed much. (2) through eight hydroxyquinoline zinc films on thermal evaporation coating prepared in argon annealing environment, discovered the thin film self-assembly of eight hydroxyquinoline zinc crystals by means of Fourier transform infrared on the generated. The internal structure was tested. The photoluminescence spectra, the luminescence intensity of eight hydroxyquinoline zinc found after annealing becomes larger. The possible reason is due to the crystal growth process, intramolecular PI accumulation intensity, hydrogen 閿綔鐢ㄧ瓑鍒嗗瓙闂寸浉浜掍綔鐢ㄥ姞寮,
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