本文選題：SU-8膠　切入點(diǎn)：光強(qiáng)分布　出處：《東南大學(xué)》2015年碩士論文

【摘要】：如今,基于MEMS技術(shù)的產(chǎn)品逐漸應(yīng)用于現(xiàn)代生活的各個(gè)領(lǐng)域。在MEMS制造工藝中,由于其器件結(jié)構(gòu)的特殊性,通常選取SU-8膠作為形成高深寬比結(jié)構(gòu)的主流工藝。以往,為了模擬曝光后SU-8膠內(nèi)部的光強(qiáng)分布,進(jìn)而預(yù)測(cè)SU-8膠顯影后的最終形貌。一般采取的方法是傳統(tǒng)幾何光學(xué),即標(biāo)量衍射理論。這一方法在精度要求不高的前提下,能夠給出較為準(zhǔn)確的結(jié)果。但隨著MEMS的飛速發(fā)展,其器件尺寸不斷減小,結(jié)構(gòu)復(fù)雜程度不斷提高,利用傳統(tǒng)幾何光學(xué)對(duì)SU-8膠進(jìn)行建模仿真的結(jié)果與實(shí)驗(yàn)結(jié)果將會(huì)產(chǎn)生明顯的偏差。這時(shí),亟需建立一個(gè)更為精確的電磁場(chǎng)求解模型,亦即矢量衍射理論。本文所研究的曝光模型,選取基于嚴(yán)格電磁場(chǎng)理論的波導(dǎo)法作為其建模的理論依據(jù)。在建模過(guò)程中充分考量空氣間隙、入射角度以及襯底反射等工藝參數(shù)對(duì)光強(qiáng)分布的影響。并通過(guò)數(shù)學(xué)抽象以及具體的編程工作,建立了適合于計(jì)算垂直/傾斜光刻的二維/三維光強(qiáng)分布模型,該模型可較為真實(shí)地描述光刻膠內(nèi)部的光強(qiáng)分布。在此基礎(chǔ)上,再結(jié)合已有的其他模塊從而形成一套能精確、快速模擬光刻全過(guò)程的計(jì)算機(jī)模擬軟件,該軟件可以對(duì)光刻膠內(nèi)部的光強(qiáng)分布以及光刻膠顯影形貌進(jìn)行模擬。結(jié)合具體的SU-8膠、接近式光刻工藝,本文給出了相應(yīng)的光強(qiáng)分布模擬結(jié)果以及光刻膠顯影后的最終形貌。同時(shí)探究了各個(gè)工藝參數(shù)對(duì)光學(xué)光刻工藝的影響,包括空氣間隙、襯底反射、曝光角度等。就垂直入射和傾斜入射這兩種不同情況,分別進(jìn)行了SU-8膠相關(guān)光刻實(shí)驗(yàn),并將此實(shí)驗(yàn)結(jié)果和模擬結(jié)果進(jìn)行對(duì)比、分析。從而驗(yàn)證了本模型的正確性。目前針對(duì)光刻工藝中的光強(qiáng)分布模擬,國(guó)內(nèi)的研究主要集中在標(biāo)量衍射理論,而對(duì)矢量衍射理論的研究還少有涉及。因此,本課題工作具有一定的參考價(jià)值。最后,總結(jié)整個(gè)論文,并就將來(lái)進(jìn)一步的工作方向提出一些具有展望性的意見(jiàn)。
[Abstract]:Nowadays, the products based on MEMS technology are gradually used in every field of modern life. In MEMS manufacturing process, because of the particularity of its device structure, SU-8 adhesive is usually chosen as the mainstream technology to form high aspect ratio structure. In order to simulate the light intensity distribution of SU-8 gel after exposure, and then predict the final appearance of SU-8 gel after development, the general method is traditional geometrical optics, that is, scalar diffraction theory. But with the rapid development of MEMS, the device size is decreasing and the structure complexity is increasing. The results of modeling and simulation of SU-8 adhesive using traditional geometry optics will have obvious deviation from the experimental results. At this time, it is urgent to establish a more accurate electromagnetic field solution model, that is, vector diffraction theory. The waveguide method based on the strict electromagnetic field theory is chosen as the theoretical basis for the modeling. The influence of process parameters, such as incident angle and substrate reflection, on the intensity distribution of light is studied. Through mathematical abstraction and concrete programming, a two-dimensional / three-dimensional light intensity distribution model for vertical / oblique lithography is established, which is suitable for the calculation of vertical / oblique lithography. The model can describe the light intensity distribution in photoresist more realistically. On this basis, combining with other existing modules, a set of computer simulation software which can accurately and quickly simulate the whole process of lithography can be formed. The software can simulate the light intensity distribution inside photoresist and the development morphology of photoresist. Combined with specific SU-8 adhesive, proximity lithography technology, In this paper, the simulation results of the intensity distribution and the final appearance of the photoresist after development are given. The influence of various technological parameters on the optical lithography process, including air gap, substrate reflection, is also discussed. Exposure angle and so on. For the two different cases of vertical incidence and oblique incidence, the SU-8 gum related lithography experiments were carried out, and the experimental results were compared with the simulation results. At present, the research on intensity distribution in lithography is mainly focused on scalar diffraction theory, but not on vector diffraction theory. The work of this paper has certain reference value. Finally, the whole paper is summarized, and some prospective suggestions are put forward for the future work direction.
【學(xué)位授予單位】：東南大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN305.7

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