本文選題：低溫電路　切入點(diǎn)：射頻放大器　出處：《南京大學(xué)》2017年博士論文

【摘要】：超導(dǎo)納米線單光子探測(cè)器(SNSPD)發(fā)展至今已具備很多性能上的優(yōu)勢(shì),但是它通常工作在很強(qiáng)的非線性模式下,即使有多個(gè)光子同時(shí)被吸收,也只有一個(gè)脈沖信號(hào)產(chǎn)生,然而在光譜分析、通信、生物成像、宇宙觀測(cè)和量子信息處理等諸多應(yīng)用場(chǎng)合中,不僅需要對(duì)入射的光子作出響應(yīng),還需要對(duì)入射的光子數(shù),甚至光子入射的時(shí)間和空間位置進(jìn)行分辨。因此,發(fā)展SNSPD陣列,實(shí)現(xiàn)光子數(shù)分辨、時(shí)間分辨和空間分辨是SNSPD發(fā)展的一大趨勢(shì)。目前,采用集成復(fù)用方式,研究者們已經(jīng)可以通過16根同軸線在室溫下讀出8×8陣列的信號(hào),實(shí)現(xiàn)對(duì)入射光子位置的分辨。此外,利用SFQ這種超導(dǎo)電路在低溫下對(duì)8×8陣列進(jìn)行讀出的研究工作也在進(jìn)行當(dāng)中。受同軸線數(shù)量和熱負(fù)載的限制,集成復(fù)用的讀出方式最終依然會(huì)限制陣列的規(guī)模,而SFQ的設(shè)計(jì)和制作過程較為復(fù)雜,工作時(shí)還需增加額外的磁屏蔽,使用時(shí)較為不便。串聯(lián)結(jié)構(gòu)的SNSPD陣列采用傳統(tǒng)方式即可讀出,通過選用特定大小的并聯(lián)電阻也可以實(shí)現(xiàn)空間分辨,從這方面看比多像元陣列更具優(yōu)勢(shì)。但當(dāng)串聯(lián)的像元數(shù)目較多時(shí),則需要一種能夠工作在低溫環(huán)境下且具有高輸入阻抗的特殊射頻放大器以便能對(duì)不同入射光子數(shù)下的脈沖幅度進(jìn)行清晰地分辨。本論文針對(duì)串聯(lián)結(jié)構(gòu)SNSPD陣列的這一需求,采用Tower Jazz的0.18μm SiGe BiCMOS工藝,研制了具有高輸入阻抗的低溫射頻集成放大電路,主要工作圍繞兩點(diǎn)展開,首先是如何保證基于SiGe HBT的放大電路在液氦溫區(qū)能夠正常工作,其次是如何利用射頻波段的50 Ω測(cè)量系統(tǒng)表征高輸入阻抗電路,正確提取出相應(yīng)參數(shù)。研究成果分述如下:第一,搭建實(shí)驗(yàn)平臺(tái),在300 K至4.2 K的溫度范圍內(nèi)研究分析了電阻、電容和電感等基本電路元件的溫度特性。并在不同的溫度下,研究分析了 Tower Jazz工藝中的SiGe HBT以及兩種商用SiGe HBT的輸入輸出特性,總結(jié)了 SiGe HBT的直流特性隨溫度降低的一般規(guī)律,分析了低溫下差異可能出現(xiàn)的原因。此外,測(cè)量了基于SiGe HBT的比例電流源的溫度特性。這些工作為低溫集成射頻放大電路的設(shè)計(jì)和優(yōu)化提供了重要的技術(shù)保證。第二,通過改變供電方式,使初始研制的50Ω輸入阻抗電路在4.2 K獲得了10 dB增益和2 MHz～1 GHz帶寬,并成功讀出SNSPD的脈沖信號(hào),驗(yàn)證了 SiGe工藝在液氦溫區(qū)工作的可行性。在此基礎(chǔ)上,參與設(shè)計(jì)了具有高輸入阻抗的單端、差分兩種結(jié)構(gòu)的射頻集成放大電路,采用直流工作點(diǎn)可調(diào)的方式,克服了缺乏低溫工藝模型庫這一設(shè)計(jì)過程中的難題,從工程的角度保證了 SiGe HBT在4.2 K下可以偏置于合適的直流工作點(diǎn),使得電路能夠正常工作。第三,使用網(wǎng)絡(luò)分析儀研究了高輸入阻抗射頻放大電路特征參數(shù)的提取,從電壓的角度分析了在阻抗不匹配情況下的信號(hào)分配比例,證實(shí)了由50 射頻測(cè)量系統(tǒng)得到的高阻放大器增益會(huì)比實(shí)際值高6 dB。此外,通過對(duì)比不同校準(zhǔn)位置下的測(cè)量結(jié)果,明確了系統(tǒng)中連接低溫和室溫環(huán)境的較長同軸線對(duì)于阻抗和增益測(cè)量的影響。這些工作既為高輸入阻抗射頻電路的低溫表征提供了技術(shù)方法,又有助于低溫電路與SNSPD的正確互連。第四,利用高阻抗射頻電路的測(cè)試方法,使用網(wǎng)絡(luò)分析儀成功表征了具有高輸入阻抗的單端、差分兩種結(jié)構(gòu)射頻集成放大電路的性能。在常溫下,二者的測(cè)量結(jié)果與仿真值吻合良好。在4.2K下,單端結(jié)構(gòu)的增益為20 dB,帶寬為3.8 MHz～1 GHz,輸入阻抗最大可達(dá)6.7Ω,功耗僅為0.6 mW,雙端結(jié)構(gòu)的增益可達(dá)26 dB,帶寬為100 kHz～1 GHz,輸入阻抗最大可達(dá)10kΩ,功耗約為0.9 mW。第五,搭建并逐步優(yōu)化了低溫讀出電路與SNSPD的互連測(cè)試系統(tǒng),并成功將各種結(jié)構(gòu)的低溫電路與SNSPD互連,讀出了相應(yīng)的脈沖信號(hào)。該互連測(cè)試系統(tǒng)不僅可以對(duì)低溫電路的增益進(jìn)行監(jiān)測(cè),確保電路處于正常工作狀態(tài),同時(shí)具備傳統(tǒng)讀出方式中可以對(duì)器件的Ⅰ-Ⅴ曲線進(jìn)行掃描的優(yōu)點(diǎn),便于確定SNSPD偏置電流的大小以及評(píng)估低溫電路對(duì)于器件超流壓縮的影響,為低溫電路與SNSPD的互連測(cè)試奠定了良好的基礎(chǔ)。
[Abstract]:Superconducting nanowire single photon detector (SNSPD) has developed have many advantages, but it usually works in the nonlinear model is very strong, even if there are multiple photon absorption at the same time, there is only one pulse signal is generated in the spectral analysis, communication, biological imaging, space observation and quantum information processing in many applications, not only need to respond to the incident photon, photon number also need to incident, even photon incident time and space position resolution. Therefore, the development of the SNSPD array, realize photon number resolution, time resolution and spatial resolution is a major trend in the development of SNSPD. At present, the integration of reuse the way, the researchers can through 16 coaxial read 8 * 8 array signal at room temperature, the resolution of the incident photon position. In addition, at a low temperature of 8 * 8 array of the use of SFQ superconducting circuit Column readout research work is also underway. By limiting the number of coaxial and thermal load, readout integrated multiplexing eventually will still limit the array size, and design and manufacture process of SFQ is more complex, the work needed to increase the use of additional magnetic shielding, is inconvenient. The series SNSPD array structure the traditional way to read through the selection of specific size of the shunt resistance can also achieve spatial resolution, has more advantage than the multi pixel array from this aspect. But when the number of pixels in series is large, you need a special RF amplifier with high input impedance and working in low temperature environment so as to pulse amplitude under the different incident photon number resolution. This thesis focuses on the demand structure of SNSPD series array, using 0.18 m SiGe BiCMOS Tower Jazz technology, developed with high Low temperature RF integrated amplifier input impedance, mainly focused on two aspects, the first is how to ensure the SiGe amplifier circuit based on HBT can work normally in liquid helium temperature region, the second is how to use 50 ohm measurement system characterized with high input impedance circuit of radio frequency band, extract the correct corresponding parameters. The results are as follows: 1. Set up the experimental platform, research and analysis of the resistance in the temperature range from 300 K to 4.2 K, the temperature characteristics of the capacitance and inductance of circuit elements. And at different temperatures on the research and analysis of Tower Jazz technology in SiGe HBT and two kinds of commercial SiGe HBT input and output characteristics, summed up the general rules of DC characteristics SiGe HBT decreases with increasing temperature, analyzed the reason of low temperature differences may occur. In addition, measuring the temperature characteristics of SiGe HBT based on the proportion of the current source. These work for low Wen Jicheng Provide important assurance technology of amplifier circuit design and optimization. Second, by changing the power supply mode, the initial development of 50 ohm input impedance of the circuit was 10 dB gain and 2 MHz ~ 4.2 K in 1 GHz bandwidth, and readout pulse signal SNSPD, verify the feasibility of SiGe technology in liquid helium temperature region. On this basis, in the design of the single ended with a high input impedance, low radio frequency integrated amplifying circuit is divided into two kinds of structure, the DC operating point can be adjusted, to overcome the problem of lacking the design process of low temperature process in the model library, from the perspective of the project to ensure that the SiGe HBT at 4.2 K can offset from the appropriate DC operating point, so that the circuit can work normally. Third, extraction of high input impedance amplifier circuit using the characteristic parameters of the network analyzer, the voltage analysis of the impedance mismatch in the The proportion of signal distribution case, confirmed the high impedance amplifier gain by 50 RF measurement system than the actual value of 6 dB. in addition, by measuring the results of the different calibration position, the system is connected at room temperature and low temperature environment with long axis for impedance and gain measurement. Provide technical method these work not only for low temperature characterization of high input impedance of the RF circuit, the correct connection but also contribute to the low temperature circuit with SNSPD. Fourth, the test method of high impedance of the RF circuit, using a network analyzer to characterize the single ended successfully with high input impedance, the performance of two kinds of structure of RF integrated amplifier at room temperature. Two, measurement results and simulation results agree well. In 4.2K, the single end structure gain of 20 dB bandwidth of 3.8 MHz to 1 GHz, the maximum is 6.7 ohm input impedance, power consumption is only 0.6 mW, double End structure gain up to 26 dB bandwidth of 100 kHz to 1 GHz, the input impedance of up to 10K, power consumption is about 0.9 mW. in fifth, and gradually build optimized interconnect test system with low temperature readout circuit with SNSPD, and the success of the low temperature circuit and SNSPD interconnect structure, read the corresponding pulse signal. The interconnection test system can not only gain of the circuit on the low temperature monitoring, to ensure that the circuit is in the normal working state, at the same time with the traditional way of reading can be advantages of the device I-V curves were scanned, easy to determine the bias current of SNSPD circuit size and evaluation of low temperature influence on super flow compression device, and laid a good foundation for the low temperature interconnect test circuit with SNSPD.

【學(xué)位授予單位】：南京大學(xué)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN15;TN40

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